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See detailUniaxial negative thermal expansion and metallophilicity in Cu3[Co(CN)6]
Sapnik, A. F.; Liu, X.; Böstrom, H. L. B. et al

in Journal of Solid State Chemistry (2018), 258

We report the synthesis and structural characterisation of the molecular framework copper(I) hexacyanocobaltate(III), Cu3[Co(CN)6], which we find to be isostructural to H3[Co(CN)6] and the colossal ... [more ▼]

We report the synthesis and structural characterisation of the molecular framework copper(I) hexacyanocobaltate(III), Cu3[Co(CN)6], which we find to be isostructural to H3[Co(CN)6] and the colossal negative thermal expansion material Ag3[Co(CN)6]. Using synchrotron X-ray powder diffraction measurements, we find strong positive and negative thermal expansion behaviour respectively perpendicular and parallel to the trigonal crystal axis: α = 25.4(5) MK a −1 and α = − 43.5(8) MK c −1. These opposing effects collectively result in a volume expansivity α = 7.4(11) MK V −1 that is remarkably small for an anisotropic molecular framework. This thermal response is discussed in the context of the behaviour of the analogous H- and Ag-containing systems. We make use of density-functional theory with many-body dispersion interactions (DFT + MBD) to demonstrate that Cu+…Cu+ metallophilic (‘cuprophilic’) interactions are significantly weaker in Cu3[Co(CN)6] than Ag+…Ag+ interactions in Ag3[Co(CN)6], but that this lowering of energy scale counterintuitively translates to a more moderate—rather than enhanced—degree of structural flexibility. The same conclusion is drawn from consideration of a simple GULP model, which we also present here. Our results demonstrate that strong interactions can actually be exploited in the design of ultra-responsive materials if those interactions are set up to act in tension. [less ▲]

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See detailThermochemical and kinetic aspects of the sulfurization of Cu–Sb and Cu–Bi thin films
Colombara, Diego UL; Peter, Laurence M.; Rogers, Keith D. et al

in Journal of Solid State Chemistry (2011)

CuSbS2 and Cu3BiS3 are being investigated as part of a search for new absorber materials for photovoltaic devices. Thin films of these chalcogenides were produced by conversion of stacked and co ... [more ▼]

CuSbS2 and Cu3BiS3 are being investigated as part of a search for new absorber materials for photovoltaic devices. Thin films of these chalcogenides were produced by conversion of stacked and co-electroplated metal precursor layers in the presence of elemental sulfur vapour. Ex-situ XRD and SEM/EDS analyses of the processed samples were employed to study the reaction sequence with the aim of achieving compact layer morphologies. A new “Time-Temperature-Reaction” (TTR) diagram and modified Pilling–Bedworth coefficients have been introduced for the description and interpretation of the reaction kinetics. For equal processing times, the minimum temperature required for CuSbS2 to appear is substantially lower than for Cu3BiS3, suggesting that interdiffusion across the interfaces between the binary sulfides is a key step in the formation of the ternary compounds. The effects of the heating rate and sulfur partial pressure on the phase evolution as well as the potential losses of Sb and Bi during the processes have been investigated experimentally and the results related to the equilibrium pressure diagrams obtained via thermochemical computation. [less ▲]

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