References of "Journal of Crystal Growth"
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See detailOvergrowth of wrinkled InGaAs membranes using molecular beam epitaxy
da Silva, S. Filipe Covre; Martin Lanzoni, Evandro UL; Malachias, A. et al

in Journal of Crystal Growth (2015), 425

Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the ... [more ▼]

Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The material migration during growth is evaluated by distinct microscopy techniques. We find a systematic accumulation of the deposited material on the released, wrinkled areas of the sample, whereas no material accumulation or formation of three-dimensional nanostructures is observed on the unreleased areas of the sample. [less ▲]

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See detailCrystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2
Colombara, Diego UL; Delsante, Simona; Borzone, Gabriella et al

in Journal of Crystal Growth (2013), 364

Single crystals of Cu2ZnSnS4 have been produced within sealed quartz ampoules via the chemical vapour transport technique using I2 as the transporting agent. The effects of temperature gradient and I2 ... [more ▼]

Single crystals of Cu2ZnSnS4 have been produced within sealed quartz ampoules via the chemical vapour transport technique using I2 as the transporting agent. The effects of temperature gradient and I2 load on the crystal habit and composition are considered. Crystals have been analyzed with XRD, SEM, and TEM for compositional and structural uniformities at both microscopic and nanoscopic levels. The synthesized crystals have suitable (I2-load dependent) properties and are useful for further solar absorber structural and physical characterizations. A new chemical vapour transport method based on longitudinally isothermal treatments is attempted. Based on a proposed simplistic mechanism of crystal growth, conditions for crystal enlargement with the new method are envisaged. [less ▲]

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See detailMOVPE of CuGaSe2 on GaAs in the presence of a CuxSe secondary phase
Gütay, Levent UL; Larsen, Jes K. UL; Guillot, Jerome et al

in Journal of Crystal Growth (2011), (315), 82-86

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See detailGaN-nanowhiskers: MBE-growth conditions and optical properties
Meijers, R.; Richter, T.; Calarco, R. et al

in Journal of Crystal Growth (2006), 289(1), 381-386

Morphology and optical properties of GaN nanowhiskers grown by molecular beam epitaxy(MBE) have been studied in correlation with growth parameters. It was shown that the growth parameters can be tuned ... [more ▼]

Morphology and optical properties of GaN nanowhiskers grown by molecular beam epitaxy(MBE) have been studied in correlation with growth parameters. It was shown that the growth parameters can be tuned such that uniform, well separated and high-quality nanowhiskers are obtained. Using an optimized ramp of Ga beam equivalent pressure (BEP) during the growth, the tapering or coalescence of nanowhiskers can be suppressed. By increasing the growth temperature the density of nanowhiskers is reduced, but the crystalline quality is improved as can be concluded from cathodoluminescence (CL) results. [less ▲]

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