References of "Journal of Applied Physics"
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See detailNanoscale magnetophotonics
Maccaferri, Nicolò UL; Zubritskaya, Irina; Razdolski, Ilya et al

in Journal of Applied Physics (2020), 127(8), 080903

This Perspective surveys the state-of-the-art and future prospects of science and technology employing nanoconfined light (nanophotonics and nanoplasmonics) in combination with magnetism. We denote this ... [more ▼]

This Perspective surveys the state-of-the-art and future prospects of science and technology employing nanoconfined light (nanophotonics and nanoplasmonics) in combination with magnetism. We denote this field broadly as nanoscale magnetophotonics. We include a general introduction to the field and describe the emerging magneto-optical effects in magnetoplasmonic and magnetophotonic nanostructures supporting localized and propagating plasmons. Special attention is given to magnetoplasmonic crystals with transverse magnetization and the associated nanophotonic non-reciprocal effects and to magneto-optical effects in periodic arrays of nanostructures. We also give an overview of the applications of these systems in biological and chemical sensing, as well as in light polarization and phase control. We further review the area of nonlinear magnetophotonics, the semiconductor spin-plasmonics, and the general principles and applications of opto-magnetism and nano-optical ultrafast control of magnetism and spintronics. [less ▲]

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See detailTemperature-dependent photo-response in multiferroic BiFeO3 revealed by transmission measurements
Meggle, F.; Viret, M.; Kreisel, Jens UL et al

in JOURNAL OF APPLIED PHYSICS (2019), 125(11),

We studied the light-induced effects in BiFeO3 single crystals as a function of temperature by means of optical spectroscopy. Here, we report the observation of several light-induced absorption features ... [more ▼]

We studied the light-induced effects in BiFeO3 single crystals as a function of temperature by means of optical spectroscopy. Here, we report the observation of several light-induced absorption features which are discussed in terms of the photostriction effect and are interpreted in terms of excitons. The temperature dependence of their energy position suggests a possible coupling between the excitons and the lattice vibrations. Moreover, there are hints for anomalies in the temperature evolution of the excitonic features, which might be related to the temperature-induced magnetic phase transitions in BiFeO3. Our findings suggest a coupling between light-induced excitons and the lattice and spin degrees of freedom, which might be relevant for the observed ultrafast photostriction effect in multiferroic BiFeO3. Published under license by AIP Publishing. [less ▲]

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See detailHall measurements on low-mobility thin films
Werner, Florian UL

in Journal of Applied Physics (2017), 122

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See detailThickness dependence of the resistivity of platinum-group metal thin films
Dutta, S.; Sankaran, K.; Moors, Kristof UL et al

in Journal of Applied Physics (2017), 122(2),

We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, and Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses below about 5 nm ... [more ▼]

We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, and Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses below about 5 nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free path, the data for Ru, Ir, and Cu were modeled within the semiclassical Mayadas-Shatzkes model [Phys. Rev. B 1, 1382 (1970)] to assess the combined contributions of surface and grain boundary scattering to the resistivity. For Ru, the modeling results indicated that surface scattering was strongly dependent on the surrounding material with nearly specular scattering at interfaces with SiO2 or air but with diffuse scattering at interfaces with TaN. The dependence of the thin film resistivity on the mean free path is also discussed within the Mayadas-Shatzkes model in consideration of the experimental findings. [less ▲]

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See detailImpact of annealing on electrical properties of Cu2ZnSnSe4 absorber layers
Weiss, Thomas UL; Redinger, Alex UL; Rey, Germain UL et al

in Journal of Applied Physics (2016), 120

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See detailDoping mechanism in pure CuInSe2
Werner, Florian UL; Colombara, Diego UL; Melchiorre, Michele UL et al

in JOURNAL OF APPLIED PHYSICS (2016), 119

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See detailIntragrain charge transport in kesterite thin films-Limits arising from carrier localization
Hempel, Hannes; Redinger, Alex UL; Repins, Ingrid et al

in JOURNAL OF APPLIED PHYSICS (2016), 120(17),

Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)(4) kesterite thin films are found to increase from 32 to 140 cm(2) V-1 s(-1) with ... [more ▼]

Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)(4) kesterite thin films are found to increase from 32 to 140 cm(2) V-1 s(-1) with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by co-evaporation colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9\%-10.0 efficiency in the completed device. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). [less ▲]

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See detailPhotoluminescence studies in epitaxial CZTSe thin films
Sendler, Jan UL; Thevenin, Maxime UL; Werner, Florian UL et al

in Journal of Applied Physics (2016), 120

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See detailSynthesis and magnetic properties of Ta/NdFeB-based composite microwires
Szary, Philipp; Luciu, Ioana; Duday, David et al

in Journal of Applied Physics (2015), 117

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See detailDetection of a MoSe2 secondary phase layer in CZTSe by spectroscopic ellipsometry
Demircio glu, Ozden; Mousel, Marina UL; Redinger, Alex UL et al

in JOURNAL OF APPLIED PHYSICS (2015), 118

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See detailMultiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence (vol 116, 073509, 2014)
Djemour, Rabie; Redinger, Alex UL; Mousel, Marina et al

in JOURNAL OF APPLIED PHYSICS (2015), 118(8),

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See detailAtom probe tomography study of internal interfaces in Cu2ZnSnSe4 thin-films
Schwarz, T.; Cojocaru-Mir edin, O.; Choi, P. et al

in Journal of Applied Physics (2015), 118

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See detailCurrent loss due to recombination in Cu-rich CuInSe2 solar cells
Depredurand, Valérie UL; Tanaka, Daisuke; Aida, Yasuhiro UL et al

in JOURNAL OF APPLIED PHYSICS (2014), 115

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See detailMultiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence
Djemour, Rabie UL; Redinger, Alex UL; Mousel, Marina UL et al

in Journal of Applied Physics (2014), 116

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See detailModulated photocurrent experiments-comparison of different data treatments
Luckas, Jennifer Maria UL; Longeaud; Siebentritt, Susanne UL

in JOURNAL OF APPLIED PHYSICS (2014), 116

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See detailReconstructions and electronic structure of (11-22) and (11-2-2) semipolar AlN surfaces
Kalesaki, Efterpi UL; Lymperakis, Liverios; Kioseoglou, Joseph et al

in Journal of Applied Physics (2012), 112

The energetics, atomic geometry, and electronic structure of semipolar (11-22) and (11-2-2) AlN surfaces are investigated employing first principles calculations. For metal-rich growth conditions ... [more ▼]

The energetics, atomic geometry, and electronic structure of semipolar (11-22) and (11-2-2) AlN surfaces are investigated employing first principles calculations. For metal-rich growth conditions, metallic reconstructions are favoured on both polarity surfaces. For N rich to moderate Al rich conditions, the (11-22) planes promote semiconducting reconstructions having 2 × 2 or c(2 × 2) periodicity. In contrast, under the particular range of the Al chemical potential the (11-2-2) surfaces stabilize reconstructions with excess metal and it is only at the extreme N rich limit that the semiconducting c(2 × 2) N adatom structure prevails. The present study reveals that the reconstructed (11-22) surfaces do not contain steps in contrast to (11-2-2) where surface steps are inherent for N rich to moderate metal rich growth conditions and may result in intrinsic step-flow growth and/or growth of parasitic semipolar orientations. [less ▲]

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See detailInterfaces between nonpolar and semipolar III-nitride semiconductor orientations: Structure and defects
Kioseoglou, Joseph; Lotsari, Antiopi; Kalesaki, Efterpi UL et al

in Journal of Applied Physics (2012), 111

Observations of easy transition between nonpolar and semipolar orientations during III-Nitride heteroepitaxy identify the 90o <-12-10> rotation relationship as being very important in defining this ... [more ▼]

Observations of easy transition between nonpolar and semipolar orientations during III-Nitride heteroepitaxy identify the 90o <-12-10> rotation relationship as being very important in defining this coexistence. A rigorous analysis of this relationship using the topological theory of interfaces showed that it leads to a high order of coincident symmetry and makes energetically favorable the appearance of the intergranular boundaries. Principal low-energy boundaries, that could also be technologically exploited, have been identified by high-resolution transmission electron microscopy (HRTEM) observations and have been studied energetically using empirical potential calculations. It is also shown that these boundaries can change their average orientation by incorporating disconnections. The pertinent strain relaxation mechanisms can cause such boundaries to act as sources of threading dislocations and stacking faults. The energetically favorable (10-10) // (0001) boundary was frequently observed to delimit m-plane crystallites in (-12-12) semipolar growth. [less ▲]

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