References of "IEEE Transactions on Electron Devices"
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See detailOrigin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs,
Marso, Michel UL; Heidelberger, Gero; Indlekofer, Klaus Michael et al

in IEEE Transactions on Electron Devices (2006), 53(7), 1517-1723

In this paper, the influence of a 10-nm-thick silicondioxide layer, as a passivation or as a gate insulation, on the performance of heterojunction field-effect transistors (HFETs) and ... [more ▼]

In this paper, the influence of a 10-nm-thick silicondioxide layer, as a passivation or as a gate insulation, on the performance of heterojunction field-effect transistors (HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs), based on an undoped AlGaN/GaN heterostructure on a SiC substrate, was investigated. Channel-conductivity results yield a nearly 50% increase of mobility in the MOSHFET samples compared to the unpassivated HFETs. This increase of the transport properties of the MOSHFET channel is confirmed by a similar 45% increase of the cutoff frequency, from 16.5 to 24 GHz. Hall measurements, however, show a 10% decrease of the mobility in the heterostructure with a SiO2 top layer. In this paper, the superior performance of the MOSHFET transistor, in contradiction to the Hall results, is attributed to the screening of the Coulomb scattering of the charged surface defects by the gate-metallization layer. [less ▲]

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See detailDetermination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method
Kuzmík, J.; Javorka, P.; Alam, A. et al

in IEEE Transactions on Electron Devices (2002), 49(8), 1496-1498

Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and sapphire substrates are studied, exploiting transistor dc characterization methods. A negative differential output ... [more ▼]

Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and sapphire substrates are studied, exploiting transistor dc characterization methods. A negative differential output resistance is observed for high dissipated power levels. An analytical formula for a source-drain current drop as a function of parasitic source resistance and threshold voltage changes is proposed to explain this behavior. The transistor source resistance and threshold voltage is determined experimentally at different elevated temperatures to construct channel temperature versus dissipated power transfer characteristic. It is found that the HEMT channel temperature increases rapidly with dissipated power and at 6 W/mm reaches values of 320 C for sapphire and 95 C for silicon substrate, respectively. [less ▲]

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See detailOvergrown PBT's: Calculations and Measurements
Schüppen, A.; Marso, Michel UL; Lüth, H.

in IEEE Transactions on Electron Devices (1994), 41(1994), 751-760

The device parameters of overgrown silicon permeable base transistors (PBT’s) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some ... [more ▼]

The device parameters of overgrown silicon permeable base transistors (PBT’s) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some design rules arise for optimizing the high frequency performance of PBT’s. The calculations indicate the source-drain distance as the essential PBT parameter, which should be kept below 200 nm in order to expect unity current- gain frequencies fT over 50 GHz. In addition, PBT’s with buried monocrystalline CoSiz -gates have been fabricated by high dose cobalt ion implantation through a grid-like mask into MOS-compatible n -type Si(lO0). Measurements revealed a transconductance of 70 mS/mm and a fT value of 6 GHz. The comparison between measured and simulated output characteristics shows good agreement. [less ▲]

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See detailSchottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers,
Kordoš, P.; Marso, Michel UL; Meyer, R. et al

in IEEE Transactions on Electron Devices (1992), 39(1992), 1970-1972

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