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   Photoluminescence-Based Method for Imaging Buffer Layer Thickness in CIGS Solar CellsRey, Germain  ; ; et alin IEEE Journal of Photovoltaics (2020) Detailed reference viewed: 55 (6 UL) Influence of Sodium and Rubidium Postdeposition Treatment on the Quasi-Fermi Level Splitting of Cu(In,Ga)Se2 Thin FilmsWolter, Max ; ; et alin IEEE Journal of Photovoltaics (2018) Detailed reference viewed: 93 (3 UL)Investigation on the Angle and Spectral Dependence of the Internal and the External Quantum Efficiency of Crystalline Silicon Solar Cells and Modules; ; Siebentritt, Susanne in IEEE Journal of Photovoltaics (2018) Detailed reference viewed: 77 (0 UL)A Novel Fast Process for Zn(O,S) Buffer Layers, Doped With Al and B and Deposited on CIGSSe Solar Cells; ; et al in IEEE Journal of Photovoltaics (2017), 7 Detailed reference viewed: 112 (0 UL)Potassium fluoride ex-situ treatment on both Cu-rich and Cu-poor CuInSe2 thin film solar cellsElanzeery, Hossam ; Babbe, Finn ; Melchiorre, Michele et alin IEEE Journal of Photovoltaics (2017), 7(2), 684-689 Detailed reference viewed: 256 (13 UL)Silver Doped Cu2SnS3 Absorber Layers for Solar Cells ApplicationDe Wild, Jessica ; Babbe, Finn ; Robert, Erika et alin IEEE Journal of Photovoltaics (2017) Detailed reference viewed: 209 (5 UL)Electrical Characterization of Defects in Cu-Rich Grown CuInSe2 Solar CellsBertram, Tobias ; ; Siebentritt, Susanne in IEEE Journal of Photovoltaics (2016), 6(2), 546-551 We study defects in CuInSe2 (CIS) grown under Cu-excess. Samples with different Cu/In and Se/metals flux ratios were characterized by thermal admittance spectroscopy (TAS), capacitance-voltage ... [more ▼] We study defects in CuInSe2 (CIS) grown under Cu-excess. Samples with different Cu/In and Se/metals flux ratios were characterized by thermal admittance spectroscopy (TAS), capacitance-voltage measurements (CV) and temperature dependent current voltage measurements (IVT). All samples showed two different capacitance responses, which we attribute to defects with energies around 100 and 220 meV. Plus the beginning of an additional step that we attribute to a freeze-out effect. By application of the Meyer-Neldel rule, the parameters of the two defects can be assigned to two different groups, both lying within the energy region of the so-called ‘N1-defect’ that has been observed for Cu-poor absorbers. [less ▲] Detailed reference viewed: 257 (6 UL)Improved Chemically Deposited Zn(O,S) Buffers for Cu(In,Ga)(S,Se)2 Solar Cells by Controlled Incorporation of Indium.Hönes, Christian ; ; et alin IEEE Journal of Photovoltaics (2016), 6(1), Detailed reference viewed: 144 (5 UL)Quantum efficiency measurements and modeling to monitor air annealing of Cu2SnS3 solar cellsDe Wild, Jessica ; Kalesaki, Efterpi ; Robert, Erika et alin IEEE Journal of Photovoltaics (2016) Detailed reference viewed: 132 (4 UL)Different Bandgaps in Cu2ZnSnSe4: A High Temperature Coevaporation StudyRedinger, Alex ; Sendler, Jan ; et alin IEEE Journal of Photovoltaics (2015), 5(2), 641-648 We present a high-temperature Cu2ZnSnSe4 coevaporation study, where solar cells with a power conversion efficiency of 7.1 have been achieved. The process is monitored with laser light scattering in order ... [more ▼] We present a high-temperature Cu2ZnSnSe4 coevaporation study, where solar cells with a power conversion efficiency of 7.1 have been achieved. The process is monitored with laser light scattering in order to follow the incorporation of the Sn into the film. We observe the segregation of ZnSe at the Mo/CZTSe interface. Optical analysis has been carried out with photoluminescence and spectrophotometry. We observe strong band tailing and a bandgap, which is significantly lower than in other reported efficient CZTSe absorbers. The photoluminescence at room temperature is lower than the bandgap due to the existence of a large quantity of tail states. Finally, we present effects of low-temperature postannealing of the absorbers on ordering of the Cu/Zn atoms in CZTSe and solar cell parameters. We observe strong changes in all solar cell parameters upon annealing. The efficiency of the annealed devices is significantly reduced, although ordering is improved compared with ones made from nonannealed absorbers. [less ▲] Detailed reference viewed: 130 (1 UL)Direct Evaluation of Defect Distributions From Admittance SpectroscopyWeiss, Thomas ; Redinger, Alex ; Regesch, David et alin IEEE JOURNAL OF PHOTOVOLTAICS (2014), 4 Detailed reference viewed: 164 (12 UL)Different Bandgaps in Cu2ZnSnSe4 : a high temperature coevaporation studyRedinger, Alex ; Sendler, Jan ; Djemour, Rabie et alin IEEE Journal of Photovoltaics (2014) Detailed reference viewed: 163 (8 UL)Route Toward High-Efficiency Single-Phase Cu2ZnSn(S,Se)4 Thin-Film Solar Cells: Model Experiments and Literature ReviewRedinger, Alex ; ; Dale, Phillip et alin IEEE Journal of Photovoltaics (2011) Detailed reference viewed: 153 (5 UL) |
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