![]() ; ; Kong, Long ![]() in Electronics Letters (2021) The intelligent reflecting surface (IRS) is an emerging technique to extend wireless coverage. In this letter, the performance of the hybrid automatic repeat request (hybrid ARQ) for an IRS‐assisted ... [more ▼] The intelligent reflecting surface (IRS) is an emerging technique to extend wireless coverage. In this letter, the performance of the hybrid automatic repeat request (hybrid ARQ) for an IRS‐assisted system is analysed. More specifically, the outage performance of the IRS‐aided system using hybrid ARQ protocol with chase combining is studied. The asymptotic analysis also shows that the outage performance is better and improves linearly by increasing the number of reflectors of the IRS‐aided system. The results also verify the potential of combining the ARQ scheme in the link layer of the IRS‐aided system and demonstrate that a very small change of path loss condition can impact the performance largely. [less ▲] Detailed reference viewed: 115 (6 UL)![]() ; ; et al in Electronics Letters (2005), 41(11), 667-668 The performance of SiO2/AlGaN/GaN MOSHFETs is described. The C–V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO2. The devices exhibited gate leakage ... [more ▼] The performance of SiO2/AlGaN/GaN MOSHFETs is described. The C–V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO2. The devices exhibited gate leakage current of 5 .10 ^-10 A/mm. Small-signal RF characterisation of 0.7 mm gate length devices yielded an fT of 24 GHz and an fmax of 40 GHz, which are comparable to those typical for state-of-the-art AlGaN/GaN HFETs. [less ▲] Detailed reference viewed: 43 (0 UL)![]() ; ; et al in Electronics Letters (2004), 40(1), 78-80 The performance of unpassivated AlGaN=GaN=SiC HEMTs prepared on different MOVPE grown layer structures is reported. An overall improvement of device characteristics using doped structures in comparison to ... [more ▼] The performance of unpassivated AlGaN=GaN=SiC HEMTs prepared on different MOVPE grown layer structures is reported. An overall improvement of device characteristics using doped structures in comparison to undoped counterpart is observed. This can be demonstrated by IDS of 0.86 and 1.33 A=mm, gm of 220 and 273 mS=mm, fT of 33 and 43 GHz and fmax of 54 and 61 GHz for 0.3 mm gate length devices on undoped and doped structures, respectively. The DC=pulsed I–V characteristics as well as power measurements show insignificant RF dispersion of HEMTs on doped structures. These results underline the advantage of doped layer structures for preparation of high-performance AlGaN=GaN HEMTs. [less ▲] Detailed reference viewed: 70 (0 UL)![]() ; ; et al in Electronics Letters (2003), 39((2003)), 1155-1157 Different influence of SiO2 and Si3N4 passivation on performance of AlGaN=GaN=Si HEMTs is reported. DC characteristics are less enhanced by using SiO2 than Si3N4. This is in agreement with carrier ... [more ▼] Different influence of SiO2 and Si3N4 passivation on performance of AlGaN=GaN=Si HEMTs is reported. DC characteristics are less enhanced by using SiO2 than Si3N4. This is in agreement with carrier concentration changes after passivation, as follows from Hall data. Small signal RF performance is degraded after applying SiO2 and enhanced after Si3N4 passivation, e.g. for unpassivated devices fTffi17 GHz which decreased to 9 GHz and increased to 28 GHz for SiO2 and Si3N4 respectively. The fmax=fT ratio has not changed after passivation. [less ▲] Detailed reference viewed: 41 (0 UL)![]() ; ; et al in Electronics Letters (2002), 38(2002), 288-289 AlGaN/GaN HEMTs on silicon substrates have been realised and their static and small signal characteristics investigated. The AlGaN/GaN (x=0.23) material structures were grown on (111) p-Si by LP-MOVPE ... [more ▼] AlGaN/GaN HEMTs on silicon substrates have been realised and their static and small signal characteristics investigated. The AlGaN/GaN (x=0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current density of 0.53 to 0.68 A/mm and a peak extrinsic transconductance of 110 mS/mm. A unity gain frequency of 20 and 32 GHz and a maximum frequency of oscillation of 22 and 27 GHz are obtained for devices with a gate length of 0.7 and 0.5 mm, respectively. These values are the highest reported so far on AlGaN=GaN=Si HEMTs and are comparable to those known for devices using sapphire and SiC substrates. [less ▲] Detailed reference viewed: 35 (0 UL)![]() ; ; et al in Electronics Letters (2001), 37(2001), 1364-1366 AlGaN/GaN Round-HEMTs on silicon substrates have been realised and their static characteristics investigated. The AlGaN/GaN (x = 0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices ... [more ▼] AlGaN/GaN Round-HEMTs on silicon substrates have been realised and their static characteristics investigated. The AlGaN/GaN (x = 0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices with 0.3 mm gate length exhibit a saturation current of 0.82 A/mm, a good pinch-off and a peak extrinsic transconductance of 110 mS/mm. Highest saturation current reported so far and static output characteristics up to 20 V demonstrate that the devices are capable of handling 16 W/mm of static heat dissipation without any degradation of their performance. [less ▲] Detailed reference viewed: 100 (0 UL)![]() Marso, Michel ![]() in Electronics Letters (2001), 37(2001), 1476-1478 Fabrication and characterisation of metal-semiconductor-metal (MSM) diodes above an AlGaN/GaN HEMT layer system for varactor applications are reported. Device fabrication uses standard HEMT processing ... [more ▼] Fabrication and characterisation of metal-semiconductor-metal (MSM) diodes above an AlGaN/GaN HEMT layer system for varactor applications are reported. Device fabrication uses standard HEMT processing steps, allowing integration in HEMT circuits without the need of sophisticated growth or etching techniques. Capacitancevoltage measurements exhibit CMAX/CMIN ratios up to 100, tunable by the electrode geometry. These results exceed best values for published heterostructure varactor diodes. Fabrication of AlGaN/GaN HEMTs on the same layer system with identical technology prove the potential for monolithic integration. [less ▲] Detailed reference viewed: 126 (0 UL)![]() ; ; et al in Electronics Letters (1999), 35(1999), 239-240 Vertical Si p-MOSFETs with channel lengths of 100nm were fabricated using selective low pressure chemical vapour deposition (LPCVD) epitaxial growth and conventional i-line lithography. The layout, called ... [more ▼] Vertical Si p-MOSFETs with channel lengths of 100nm were fabricated using selective low pressure chemical vapour deposition (LPCVD) epitaxial growth and conventional i-line lithography. The layout, called VOXFET, reduces gate to source/drain overlap capacitances, thus improving high speed applications. Transistors with a gate width of 12 um and gate oxide thickness of 10nm show transconductances gM of 200mS/mm and measured cutoff frequencies of fT = 8.7GHz and fMAX = 19.2 GHz. [less ▲] Detailed reference viewed: 143 (0 UL)![]() ; ; Marso, Michel ![]() in Electronics Letters (1998), 34(1998), 119-120 The authors demonstrate that a 550GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6ps rise and fall times, respectively. The bandwidth ... [more ▼] The authors demonstrate that a 550GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6ps rise and fall times, respectively. The bandwidth is in agreement with a value calculated using a carrier lifetime of 0.2ps, measured by femtosecond time-resolved reflectivity, and a capacitance of 0.014fF/um2, determined from microwave measurements. The device bandwidth is RC limited. [less ▲] Detailed reference viewed: 94 (0 UL)![]() ; ; et al in Electronics Letters (1996), 32(1996), 2132-2133 A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness ... [more ▼] A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained. [less ▲] Detailed reference viewed: 106 (0 UL)![]() ; ; Marso, Michel ![]() in Electronics Letters (1996), 32 Detailed reference viewed: 163 (0 UL)![]() ; Marso, Michel ![]() in Electronics Letters (1996), 32 The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with ... [more ▼] The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with 2um finger-spacing and finger-width exhibit a dark current density less than 10pA/um2, a breakdown voltage of 45V and a saturation capacitance of 30fF. A DC responsivity of 0.61A/W and a –3dB bandwidth of 8.5GHz were achieved. The electric potential distribution is modified by a 2DEG inserted in the layer structure leading, to improved bandwidth. [less ▲] Detailed reference viewed: 88 (0 UL)![]() Marso, Michel ![]() in Electronics Letters (1995), 31(1995), 589-591 Detailed reference viewed: 107 (0 UL)![]() ; ; Marso, Michel ![]() in Electronics Letters (1993), 29(1993), 215-217 Detailed reference viewed: 23 (0 UL)![]() ; Marso, Michel ![]() in Electronics Letters (1992), 28(1992), 1689-1690 Detailed reference viewed: 104 (0 UL)![]() Marso, Michel ![]() in Electronics Letters (1991), 27(1991), 335-337 Detailed reference viewed: 84 (0 UL)![]() ; Marso, Michel ![]() in Electronics Letters (1991), 27(1991), 1759-1760 Detailed reference viewed: 89 (0 UL)![]() Marso, Michel ![]() in Electronics Letters (1989), 25(1989), 1462-1463 Detailed reference viewed: 89 (0 UL) |
||