A Learning Based Framework for Enhancing Physical Layer Security in Cooperative D2D Network

in Electronics (2022)

Next-generation wireless communication networks demand high spectrum efficiency to serve the requirements of an enormous number of devices over a limited available frequency spectrum. Device-to-device ... [more ▼]

Next-generation wireless communication networks demand high spectrum efficiency to serve the requirements of an enormous number of devices over a limited available frequency spectrum. Device-to-device (D2D) communication with spectrum reuse offers a potential solution to spectrum scarcity. On the other hand, non-orthogonal multiple access (NOMA) as a multiple-access approach has emerged as a key technology to re-use a spectrum among multiple users. A cellular users (CUs) can share their spectrum with D2D users (DUs) and in response, the D2D network can help relay the CU signal to achieve better secrecy from an eavesdropper. Power optimization is known to be a promising technique to enhance system performance in challenging communication environments. This work aimed to enhance the secrecy rate of the CUs where the D2D transmitter (DT) helps in relaying the CU’s message under the amplify and forward (AF) protocol. A power optimization problem is considered under the quality of service constraints in terms of minimum rate requirements at the receivers and maximum power budgets at the transmitters. The problem is a non-convex complex optimization. A deep learning-based solution is proposed and promising results are obtained in terms of the secrecy rate of CU and the rate of D2D users. [less ▲]

Design and Optimization of Microwave Sensor for the Non-Contact Measurement of Pure Dielectric Materials

in Electronics (2021)

This article presents an optimized microwave sensor for the non-contact measurement of complex permittivity and material thickness. The layout of the proposed sensor comprises the parallel combination of ... [more ▼]

This article presents an optimized microwave sensor for the non-contact measurement of complex permittivity and material thickness. The layout of the proposed sensor comprises the parallel combination of an interdigital capacitor (IDC) loaded at the center of the symmetrical differential bridge-type inductor fabricated on an RF-35 substrate (εr = 3.5 and tanδ = 0.0018). The bridge-type differential inductor is introduced to obtain a maximum inductance value with high quality (Q) factor and low tunable resonant frequency. The central IDC structure is configured as a spur-line structure to create a high-intensity coupled electric field (e-field) zone, which significantly interacts with the materials under test (MUTs), resulting in an increased sensitivity. The proposed sensor prototype with optimized parameters generates a resonant frequency at 1.38 GHz for measuring the complex permittivity and material thickness. The experimental results indicated that the resonant frequency of the designed sensor revealed high sensitivities of 41 MHz/mm for thickness with a linear response (r2 = 0.91567), and 53 MHz/Δεr for permittivity with a linear response (r2 = 0.98903). The maximum error ratio for measuring MUTs with a high gap of 0.3 mm between the testing sample and resonator is 6.52%. The presented performance of the proposed sensor authenticates its application in the non-contact measurement of samples based on complex permittivity and thickness. [less ▲]