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Showing results 61 to 64 of 64
   Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation,; ; Marso, Michel  et alin Applied Physics Letters (2003), 83((2003)), 5455 Conductivity and Hall effect measurements were performed before and after Si3N4 passivation of intentionally undoped and doped AlGaN/GaN heterostructures on Si and SiC substrates. An increase of the sheet ... [more ▼] Conductivity and Hall effect measurements were performed before and after Si3N4 passivation of intentionally undoped and doped AlGaN/GaN heterostructures on Si and SiC substrates. An increase of the sheet carrier density ~up to ;30%! and a slight decrease of the electron mobility ~less than 10%! are found in all samples after passivation. The passivation induced sheet carrier density is 1.5– 231012 cm22 in undoped samples and only 0.731012 cm22 in 5–1031018 cm23 doped samples. The decrease of the electron mobility after passivation is slightly lower in highly doped samples. The channel conductivity in both types of unpassivated samples on Si and SiC substrates increases with an increase in doping density. After passivation, a well-resolved increase of channel conductivity is observed in the undoped or lightly doped samples and nearly the same channel conductivity results in the highly doped samples. [less ▲] Detailed reference viewed: 113 (0 UL)Conduction in nonstoichiometric molecular-beam epitaxial GaAs grown above the critical thickness; Marso, Michel ; in Applied Physics Letters (1998), 72 Different conduction behavior is observed in nonstoichiometric ~NS! molecular-beam epitaxial GaAs grown at 200 °C below and above the critical thickness. In the low-field Ohmic region only the ... [more ▼] Different conduction behavior is observed in nonstoichiometric ~NS! molecular-beam epitaxial GaAs grown at 200 °C below and above the critical thickness. In the low-field Ohmic region only the monocrystalline part of the layer contributes to the room-temperature resistivity, but at higher temperatures the resistivity scales with the total layer thickness. In NS GaAs grown above the critical thickness, a superlinear J –V^n (n=2 – 3) dependence is found at intermediate fields. The prebreakdown voltage is proportional to the total thickness. This indicates that different defects control the electrical properties of the polycrystalline and monocrystalline parts of the NS GaAs. These results can be useful in the design of NS GaAs based devices, which operate at higher temperature and/or higher electric fields. [less ▲] Detailed reference viewed: 96 (0 UL)Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs,; Marso, Michel ; et alin Applied Physics Letters (1997), 71 Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of ... [more ▼] Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of LT GaAs at low electric fields is rho>108 Ohm cm, much higher than resulting from van der Pauw measurements. It is found that the measured resistivity decreases with increasing the LT GaAs thickness. This is explained by space-charge effect in the vicinity of n+/LT GaAs junction and subsequent suppression of hopping conduction in the high-field junction region. [less ▲] Detailed reference viewed: 111 (0 UL)InP/InGaAs Photodetector Based on a High Electron Mobility Transistor Layer Structure: Its Response at 1.3 µm wavelength; Marso, Michel ; et alin Applied Physics Letters (1995), 67(1995), 106-108 We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high ... [more ▼] We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high electron mobility transistor structure. The photodetector is fabricated in the InP/InGaAs material system, without use of Al-containing layers. Optoelectronic measurements on a device with a finger spacing of 3 mm show a full width at half-maximum (FWHM) of the pulse response of <60 ps, which is the resolution limit of our measurement equipment. Low-temperature measurements at 40 K with electro-optical sampling at a wavelength of 890 nm show a FWHM of 1 ps. [less ▲] Detailed reference viewed: 56 (0 UL) |
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