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See detailMagnetization reversal in Nd-Fe-B based nanocomposites as seen by magnetic small-angle neutron scattering
Bick, Jens-Peter UL; Honecker, Dirk UL; Döbrich, Frank UL et al

in Applied Physics Letters (2013), 102(2), 0224151-0224155

We have studied the magnetization-reversal process of a Nd2Fe14B/Fe3B nanocomposite using small-angle neutron scattering. Based on the computation of the autocorrelation function of the spin misalignment ... [more ▼]

We have studied the magnetization-reversal process of a Nd2Fe14B/Fe3B nanocomposite using small-angle neutron scattering. Based on the computation of the autocorrelation function of the spin misalignment, we have estimated the characteristic size lC of spin inhomogeneities around the Nd2Fe14B nanoparticles. The quantity lC approaches a constant value of about 12.5 nm ( ∼ average Nd2Fe14B particle radius) at 14 T and takes on a maximum value of about 18.5 nm at the coercive field of −0.55 T. The field dependence of lC can be described by a model that takes into account the convolution relationship between the nuclear and the magnetic microstructure. [less ▲]

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See detailOn the specific absorption rate of hyperthermia fluids
Perigo, Elio Alberto UL; Sampaio, Fernanda; de Campos, Marcos Flavio

in Applied Physics Letters (2013), 103

The specific absorption rate (SAR) concept of hyperthermia ferrofluids is discussed. It is first suggested that SAR can be characterized at the steady state condition, taking into account the heating flow ... [more ▼]

The specific absorption rate (SAR) concept of hyperthermia ferrofluids is discussed. It is first suggested that SAR can be characterized at the steady state condition, taking into account the heating flow mechanism from the ferrofluid to the external environment. The temperature dependence of SAR is then addressed, indicating that the influence arises from both magnetic susceptibility and relaxation time of the system. At last, a single equation able to express the temperature versus time profile of a ferrofluid, when SAR is virtually temperature independent, is proposed up to the equilibrium condition. [less ▲]

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See detailAtom probe study of Cu2ZnSnSe4 thin-films prepared by co-evaporation and post-deposition annealing
Schwarz; Cojocaru-Mirédin, O.; Choi, P. et al

in Applied Physics Letters (2013), 102

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See detailDetecting ZnSe secondary phase in Cu2ZnSnSe4 by room temperature photoluminescence
Djemour, Rabie UL; Mousel, Marina UL; Redinger, Alex UL et al

in Applied Physics Letters (2013), 102

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See detailRaman analysis of monoclinic Cu2SnS3 thin films
Berg, Dominik M.; Djemour, Rabie UL; Gütay, Levent UL et al

in Applied Physics Letters (2012), 100

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See detailDegradation and passivation of CuInSe2
Regesch, David UL; Gütay, Levent UL; Larsen, Jes K. UL et al

in Applied Physics Letters (2012), 101

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See detailLone conduction band in Cu2ZnSnSe4
Gütay, Levent UL; Redinger, Alex UL; Djemour, Rabie UL et al

in Applied Physics Letters (2012), 100

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See detailEffect of edge threading dislocations on the electronic structure of InN
Kalesaki, Efterpi UL; Kioseoglou, Joseph; Lymperakis, Liverios et al

in Applied Physics Letters (2011), 98(7), 072103

The open issue of the n-type conductivity and its correlation to threading dislocations (TDs) in InN is addressed through first principles calculations on the electronic properties of a-edge TDs. All ... [more ▼]

The open issue of the n-type conductivity and its correlation to threading dislocations (TDs) in InN is addressed through first principles calculations on the electronic properties of a-edge TDs. All possible dislocation core models are considered (4-, 5/7-, and 8-atom cores) and are found to modify the band structure of InN in a distinct manner. In particular, nitrogen and indium low coordinated atoms in the eight-atom core induce states near the valence band maximum and above the conduction band minimum, respectively. The formation of a nitrogen–nitrogen “wrong” bond is observed at the 5/7-atom core resulting in a state inside the band gap. The 4- and 5/7-atom cores induce occupied states resonant in the conduction band due to In–In strain induced interactions and wrong bonds, respectively. These occupied states designate TDs as a source of higher electron concentrations in InN and provide direct evidence that TDs contribute to its inherent n-type conductivity. [less ▲]

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See detailIn-depth resolved Raman scattering analysis for the identification of secondary phases-characterization of Cu2ZnSnS4 layers for solar cell applications
Fontané, Xavier; Calvo-Barrio, L.; Izquierdo-Roca, V. et al

in Applied Physics Letters (2011), 98(181905), 1819051-1819053

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See detailInfluence of copper excess on the absorber quality of CulnSe2
Gütay, Levent UL; Regesch, David UL; Larsen, Jes K. UL et al

in Applied Physics Letters (2011), 99(151912), 1519121-15191123

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See detailDetection of a ZnSe secondary phase in coevaporated Cu2ZnSnSe4 thin films
Redinger, Alex UL; Hönes, Katja UL; Fontané, Xavier et al

in Applied Physics Letters (2011), 98(101907), 1019071-1019073

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See detailInfluence of secondary phase CuxSe on the optoelectronic quality of chalcopyrite thin films
Larsen, Jes K. UL; Gütay, Levent UL; Siebentritt, Susanne UL

in Applied Physics Letters (2011), 98(201910), 2019101-2019103

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See detailCoevaporation of Cu2ZnSnSe4 thin films
Redinger, Alex UL; Siebentritt, Susanne UL

in Applied Physics Letters (2010), 97(9), 092111-1

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See detailMetastable behavior of donors in CuGaSe2 under illumination
Siebentritt, Susanne UL; Rissom, Thorsten

in Applied Physics Letters (2008), 92

Several metastable effects have been observed in chalcopyrite solar cells. Recently, they have been related to the amphoteric behavior of the Se vacancy. We give an independent experimental evidence on ... [more ▼]

Several metastable effects have been observed in chalcopyrite solar cells. Recently, they have been related to the amphoteric behavior of the Se vacancy. We give an independent experimental evidence on this amphoteric behavior. By comparing charge carrier densities obtained from Hall effect measurements under illumination and in the dark, we conclude that illumination removes compensating donors. [less ▲]

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See detailTemperature-dependence of the phase-coherence length in InN nanowires
Blömers, Ch UL; Schäpers, Th; Richter, T. UL et al

in Applied Physics Letters (2008), 92(13), 132101-132103

We report on low-temperature magnetotransport measurements on InN nanowires, grown by plasma-assisted molecular beam epitaxy. The characteristic fluctuation pattern observed in the conductance was ... [more ▼]

We report on low-temperature magnetotransport measurements on InN nanowires, grown by plasma-assisted molecular beam epitaxy. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent transport. By analyzing the root mean square and the correlation field of the conductance fluctuations at various temperatures, the phase-coherence length was determined. [less ▲]

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See detailEpitaxial growth of very large grain bicrystalline Cu(In, Ga)Se2 thin films by a hybrid sputtering method
Hall, Allen J.; Hebert, Daman; Lei, C. et al

in Applied Physics Letters (2008), 103(8), 083540-1

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See detailPolarization of defect related optical transitions in chalcopyrites
Hönes, Katja UL; Eickenberg, Michael; Siebentritt, Susanne UL et al

in Applied Physics Letters (2008), 93(9), 0003-6951

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See detailCharacterization of CuInSe2 material and devices: comparison of thermal and electrochemically prepared absorber layers
Dale, Phillip UL; Samantilleke, A. P.; Zoppi, Guillaume et al

in Applied Physics Letters (2008), 41(8), 085105-085113

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See detailResonant microwave absorption determination of characteristic magnetic length in magnetic-field-annealed Vitroperm
Basheed, G. A.; Kaul, S. N.; Michels, Andreas UL

in Applied Physics Letters (2007), 91

The first direct resonant microwave absorption determination of the thermal renormalization of exchange stiffness, average magnetic anisotropy constant, and characteristic magnetic length in “field ... [more ▼]

The first direct resonant microwave absorption determination of the thermal renormalization of exchange stiffness, average magnetic anisotropy constant, and characteristic magnetic length in “field-annealed” Vitroperm samples with an initial magnetic permeability of μi = 20 000 and 150 000 has been presented and discussed. [less ▲]

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