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See detailReduction of skin effect losses in double-level-T-gate structure
Mikulics, Martin; Hardtdegen, Hilde; Arango, Y. C. et al

in Applied Physics Letters (2014), 105

We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process ... [more ▼]

We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length Lg=200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 um gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of fmax value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions. [less ▲]

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See detailThe band gap of Cu2ZnSnSe4: Effect of order-disorder
Rey, Germain UL; Redinger, Alex UL; Sendler, Jan UL et al

in Applied Physics Letters (2014), 105

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See detailExcitons in a mirror: Formation of “optical bilayers” using MoS2 monolayers on gold substrates
Mertens, Jan; Shi, Yumeng; Molina-Sanchez, Alejandro UL et al

in Applied Physics Letters (2014), 104

We report coupling of excitons in monolayers of molybdenum disulphide to their mirror image in an underlying gold substrate. Excitons at the direct band gap are little affected by the substrate whereas ... [more ▼]

We report coupling of excitons in monolayers of molybdenum disulphide to their mirror image in an underlying gold substrate. Excitons at the direct band gap are little affected by the substrate whereas strongly bound C-excitons associated with a van-Hove singularity change drastically. On quartz substrates only one C-exciton is visible (in the blue) but on gold substrates a strong red-shifted extra resonance in the green is seen. Exciton coupling to its image leads to formation of a “mirror biexciton” with enhanced binding energy. Estimates of this energy shift in an emitter-gold system match experiments well. The absorption spectrum of MoS2 on gold thus resembles a bilayer of MoS2 which has been created by optical coupling. Additional top-mirrors produce an “optical bulk.” [less ▲]

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See detailMetastable defect in CuInSe2 probed by modulated photo current experiments above 390K
Luckas, Jennifer Maria UL; Longeaud, Christophe; Bertram, Tobias UL et al

in APPLIED PHYSICS LETTERS (2014), 104

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See detailMagnetization reversal in Nd-Fe-B based nanocomposites as seen by magnetic small-angle neutron scattering
Bick, Jens-Peter UL; Honecker, Dirk UL; Döbrich, Frank UL et al

in Applied Physics Letters (2013), 102(2), 0224151-0224155

We have studied the magnetization-reversal process of a Nd2Fe14B/Fe3B nanocomposite using small-angle neutron scattering. Based on the computation of the autocorrelation function of the spin misalignment ... [more ▼]

We have studied the magnetization-reversal process of a Nd2Fe14B/Fe3B nanocomposite using small-angle neutron scattering. Based on the computation of the autocorrelation function of the spin misalignment, we have estimated the characteristic size lC of spin inhomogeneities around the Nd2Fe14B nanoparticles. The quantity lC approaches a constant value of about 12.5 nm ( ∼ average Nd2Fe14B particle radius) at 14 T and takes on a maximum value of about 18.5 nm at the coercive field of −0.55 T. The field dependence of lC can be described by a model that takes into account the convolution relationship between the nuclear and the magnetic microstructure. [less ▲]

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See detailRevised structural phase diagram of (Ba0.7Ca0.3TiO3)-(BaZr0.2Ti0.8O3)
Keeble, Dean S.; Benabdallah, Feres; Thomas, Pam A. et al

in APPLIED PHYSICS LETTERS (2013), 102(9),

The temperature-composition phase diagram of barium calcium titanate zirconate (x(Ba0.7Ca0.3TiO3)(1-x)(BaZr0.2Ti0.8O3); BCTZ) has been reinvestigated using high-resolution synchrotron x-ray powder ... [more ▼]

The temperature-composition phase diagram of barium calcium titanate zirconate (x(Ba0.7Ca0.3TiO3)(1-x)(BaZr0.2Ti0.8O3); BCTZ) has been reinvestigated using high-resolution synchrotron x-ray powder diffraction. Contrary to previous reports of an unusual rhombohedral-tetragonal phase transition in this system, we have observed an intermediate orthorhombic phase, isostructural to that present in the parent phase, BaTiO3, and we identify the previously assigned T-R transition as a T-O transition. We also observe the O-R transition coalescing with the previously observed triple point, forming a phase convergence region. The implication of the orthorhombic phase in reconciling the exceptional piezoelectric properties with the surrounding phase diagram is discussed. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793400] [less ▲]

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See detailOn the specific absorption rate of hyperthermia fluids
Perigo, Elio Alberto UL; Sampaio, Fernanda; de Campos, Marcos Flavio

in Applied Physics Letters (2013), 103

The specific absorption rate (SAR) concept of hyperthermia ferrofluids is discussed. It is first suggested that SAR can be characterized at the steady state condition, taking into account the heating flow ... [more ▼]

The specific absorption rate (SAR) concept of hyperthermia ferrofluids is discussed. It is first suggested that SAR can be characterized at the steady state condition, taking into account the heating flow mechanism from the ferrofluid to the external environment. The temperature dependence of SAR is then addressed, indicating that the influence arises from both magnetic susceptibility and relaxation time of the system. At last, a single equation able to express the temperature versus time profile of a ferrofluid, when SAR is virtually temperature independent, is proposed up to the equilibrium condition. [less ▲]

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See detailAtom probe study of Cu2ZnSnSe4 thin-films prepared by co-evaporation and post-deposition annealing
Schwarz; Cojocaru-Mirédin, O.; Choi, P. et al

in Applied Physics Letters (2013), 102

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See detailDetecting ZnSe secondary phase in Cu2ZnSnSe4 by room temperature photoluminescence
Djemour, Rabie UL; Mousel, Marina UL; Redinger, Alex UL et al

in Applied Physics Letters (2013), 102

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See detailExchange-stiffness constant of a Nd-Fe-B based nanocomposite determined by magnetic neutron scattering
Bick, Jens-Peter UL; Suzuki, Kiyonori; Gilbert, Elliot et al

in Applied Physics Letters (2013), 103

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See detailRaman analysis of monoclinic Cu2SnS3 thin films
Berg, Dominik M.; Djemour, Rabie UL; Gütay, Levent UL et al

in Applied Physics Letters (2012), 100

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See detailDegradation and passivation of CuInSe2
Regesch, David UL; Gütay, Levent UL; Larsen, Jes K. UL et al

in Applied Physics Letters (2012), 101

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See detailLone conduction band in Cu2ZnSnSe4
Gütay, Levent UL; Redinger, Alex UL; Djemour, Rabie UL et al

in Applied Physics Letters (2012), 100

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See detailEffect of edge threading dislocations on the electronic structure of InN
Kalesaki, Efterpi UL; Kioseoglou, Joseph; Lymperakis, Liverios et al

in Applied Physics Letters (2011), 98(7), 072103

The open issue of the n-type conductivity and its correlation to threading dislocations (TDs) in InN is addressed through first principles calculations on the electronic properties of a-edge TDs. All ... [more ▼]

The open issue of the n-type conductivity and its correlation to threading dislocations (TDs) in InN is addressed through first principles calculations on the electronic properties of a-edge TDs. All possible dislocation core models are considered (4-, 5/7-, and 8-atom cores) and are found to modify the band structure of InN in a distinct manner. In particular, nitrogen and indium low coordinated atoms in the eight-atom core induce states near the valence band maximum and above the conduction band minimum, respectively. The formation of a nitrogen–nitrogen “wrong” bond is observed at the 5/7-atom core resulting in a state inside the band gap. The 4- and 5/7-atom cores induce occupied states resonant in the conduction band due to In–In strain induced interactions and wrong bonds, respectively. These occupied states designate TDs as a source of higher electron concentrations in InN and provide direct evidence that TDs contribute to its inherent n-type conductivity. [less ▲]

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See detailInfluence of secondary phase CuxSe on the optoelectronic quality of chalcopyrite thin films
Larsen, Jes K. UL; Gütay, Levent UL; Siebentritt, Susanne UL

in Applied Physics Letters (2011), 98(201910), 2019101-2019103

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See detailDetection of a ZnSe secondary phase in coevaporated Cu2ZnSnSe4 thin films
Redinger, Alex UL; Hönes, Katja UL; Fontané, Xavier et al

in Applied Physics Letters (2011), 98(101907), 1019071-1019073

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See detailIn-depth resolved Raman scattering analysis for the identification of secondary phases-characterization of Cu2ZnSnS4 layers for solar cell applications
Fontané, Xavier; Calvo-Barrio, L.; Izquierdo-Roca, V. et al

in Applied Physics Letters (2011), 98(181905), 1819051-1819053

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See detailInfluence of copper excess on the absorber quality of CulnSe2
Gütay, Levent UL; Regesch, David UL; Larsen, Jes K. UL et al

in Applied Physics Letters (2011), 99(151912), 1519121-15191123

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