![]() Singh, Ajay ![]() in Solar RRL (2021) High bandgap semitransparent solar cells based on CH3NH3PbBr3 perovskites are attractive for building integration, tandem cells, and electrochemical applications. The lack of control of the CH3NH3PbBr3 ... [more ▼] High bandgap semitransparent solar cells based on CH3NH3PbBr3 perovskites are attractive for building integration, tandem cells, and electrochemical applications. The lack of control of the CH3NH3PbBr3 perovskite growth limit the exploitation of CH3NH3PbBr3-based perovskite solar cells. Herein, a posttreatment is carried out after the initial CH3NH3PbBr3 crystallization based on methylamine gas that drastically enhances the perovskite quality leading to a highly crystalline film with improved average visible transmittance (AVT) close to 56%. Opaque devices showed outstanding results in terms of open-circuit voltage and power conversion efficiency (PCE) reaching 1.54 V and 9.2%, respectively. These achievements are ascribed to a film with reduced morphological defects and better interface quality and reduced nonradiative pathways. For the first time, the fabrication of semitransparent CH3NH3PbBr3-based solar cells is demonstrated reaching a maximum PCE equal to 7.6%, an AVT of the full stack device of 52%, and an excellent light stability at maximum-power point tracking. [less ▲] Detailed reference viewed: 60 (5 UL)![]() Sood, Mohit ![]() ![]() ![]() in Solar RRL (2021) Detailed reference viewed: 71 (0 UL)![]() Weiss, Thomas ![]() ![]() ![]() in Solar RRL (2021) Detailed reference viewed: 123 (6 UL)![]() Ramirez Sanchez, Omar ![]() ![]() in Solar RRL (2021) The power conversion efficiency boost of Cu(In,Ga)Se2 in the past years has been possible due to the incorporation of heavy alkali atoms. Their addition through post-deposition treatments results in an ... [more ▼] The power conversion efficiency boost of Cu(In,Ga)Se2 in the past years has been possible due to the incorporation of heavy alkali atoms. Their addition through post-deposition treatments results in an improvement of the open-circuit voltage, which origin has been associated with grain boundaries. The present work discusses the effect of potassium fluoride post-deposition treatments on the optoelectronic properties of a series of sodium-free Cu(In,Ga)Se2 single crystals with varying Cu and Ga content. Results suggest that improvement of the quasi-Fermi level splitting can be achieved despite the absence of grain boundaries, being greater in low-gallium Cu-poor absorbers. Secondary ion mass spectrometry reveals the presence of potassium inside the bulk of the films, suggesting that transport of potassium can occur through grain interiors. In addition, a type inversion from n to p in KF-treated low-gallium Cu(In,Ga)Se2 is observed, which along a carrier lifetime study demonstrates that potassium can act as a dopant. The fact that potassium by its own can alter the optoelectronic properties of Cu(In,Ga)Se2 single crystals demonstrates that the effect of post-deposition treatments goes beyond grain boundary passivation. [less ▲] Detailed reference viewed: 287 (37 UL)![]() Babbe, Finn ![]() ![]() in Solar RRL (2018), 1800248 Detailed reference viewed: 217 (6 UL) |
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