References of "2005"
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See detailPubblico ministero europeo e azione penale: stato dell’arte e prospettive di sviluppo
Allegrezza, Silvia UL

in Coppetta, M.G. (Ed.) Profili del processo penale nella Costituzione europea (2005)

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See detailCommento agli artt. 449-452 (Giudizio direttissimo)
Allegrezza, Silvia UL

in Conso, G.; Grevi, V. (Eds.) Commentario al codice di procedura penale (2005)

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See detailGeschlechterdifferenz im Freizeitverhalten Jugendlicher
Willems, Helmut UL

in Milmeister, Marianne (Ed.) Documents de la Journée CESIJE (2005)

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See detailHalle-Neustadt - Ein Stadtteil mit Zukunft?
Steigleider, Sandra; Willems, Helmut UL

in Neustädter Nachrichten (2005)

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See detailAutomorphisms and derivations of classical and quantum Poisson algebras
Poncin, Norbert UL

Scientific Conference (2005)

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See detailSize-dependent Photoconductivity in MBE-Grown GaN-Nanowires
Calarco, Raffaella; Marso, Michel UL; Richter, Thomas et al

in Nano Letters (2005), 5(5), 981-984

We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter ... [more ▼]

We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism. The essential ingredient for the interpretation of this effect is a diameter dependent recombination barrier, which arises from the interplay between column diameter and space charge layer extension at the column surface. [less ▲]

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See detailStrafrecht und strafrechtliche Zusammenarbeit in der Europäischen Union
Ligeti, Katalin UL

Book published by Duncker & Humblot (2005)

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See detailTradeoffs in networks with positive and negative feedback
Goncalves, Jorge UL; Yi, T.; Doyle, J.

Scientific Conference (2005)

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See detailReachability analysis of continuous time piecewise linear systems
Hamadeh, A. O.; Goncalves, Jorge UL

in Proceedings of the 44th IEEE Conference on Decision and Control and European Control Conference (2005)

This paper presents a new approach to the reachability problem for a class of hybrid systems called Piecewise Linear Systems (PLS). The principal tool used is the impact map between switching surfaces ... [more ▼]

This paper presents a new approach to the reachability problem for a class of hybrid systems called Piecewise Linear Systems (PLS). The principal tool used is the impact map between switching surfaces. The method consists of specifying a ellipsoidal set on the initial switching surface and finding upper- and lower-bound estimates of the possible reach sets using tools such as the S-procedure to set up linear matrix inequalities, of which numerical solutions are then computed. [less ▲]

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See detailApplication of robust model validation using SOSTOOLS to the study of G-Protein signalling in yeast
Yi, T.; Fazel, M.; Liu, X. et al

Scientific Conference (2005)

Two major methodological challenges in modeling biological systems are model (in)validation and parameter estimation. The traditional approach is to fit the model parameters to data. An alternative ... [more ▼]

Two major methodological challenges in modeling biological systems are model (in)validation and parameter estimation. The traditional approach is to fit the model parameters to data. An alternative approach pioneered by Packard, Frenklach, Seiler and colleagues (Frenklach et al., 2002) defines the range of parameter values that is consistent with the data while taking into account parametric and data uncertainty. If an invalidation certificate is found, the feasible parameter space is proved empty; otherwise, attempts to describe the feasible parameter space are carried out. We refer to this methodology as Robust Model Validation (RMV). Here we perform RMV using sum of squares (SOS) programs implemented by the MATLAB toolbox SOSTOOLS (Prajna et al., 2002). The principal advantage of SOS over conventional semidefinite programming (SDP) techniques such as the Sprocedure is the possibility of using higher-order multipliers to obtain tighter parameter bounds. We applied SOSTOOLS to a simple model of the yeast heterotrimeric G-protein cycle. We were able to invalidate the model based on real experimental data. Furthermore, using synthetic data that did not invalidate the model, we explored different techniques for representing the feasible parameter space. [less ▲]

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See detailNucleation in suspensions of anisotropic colloids
Schilling, Tanja UL

Scientific Conference (2005)

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See detailThe interfacial tension of the isotropic-nematic interface
Schilling, Tanja UL

Presentation (2005)

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See detailSiO2 /AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax / fT of 40/24 GHz
Bernát, J.; Gregusová, D.; Heidelberger, G. et al

in Electronics Letters (2005), 41(11), 667-668

The performance of SiO2/AlGaN/GaN MOSHFETs is described. The C–V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO2. The devices exhibited gate leakage ... [more ▼]

The performance of SiO2/AlGaN/GaN MOSHFETs is described. The C–V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO2. The devices exhibited gate leakage current of 5 .10 ^-10 A/mm. Small-signal RF characterisation of 0.7 mm gate length devices yielded an fT of 24 GHz and an fmax of 40 GHz, which are comparable to those typical for state-of-the-art AlGaN/GaN HFETs. [less ▲]

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See detailHigh-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors
Kordoš, P.; Heidelberger, G.; Bernát, J. et al

in Applied Physics Letters (2005), 87(14), 143501-143504

We report on SiO2 /AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors MOSHFETs , which exhibit a 6.7 W/mm power density at 7 GHz. Unpassivated and SiO2-passivated heterostructure ... [more ▼]

We report on SiO2 /AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors MOSHFETs , which exhibit a 6.7 W/mm power density at 7 GHz. Unpassivated and SiO2-passivated heterostructure field-effect transistors HFETs were also investigated for comparison. Deposited 12 nm thick SiO2 yielded an increase of the sheet carrier density from 7.6 .10^12 to 9.2 .10^12 cm−2 and a subsequent increase of the static drain saturation current from 0.75 to 1.09 A/mm. The small-signal rf characterization of the MOSHFETs showed an extrinsic current gain cutoff frequency fT of 24 GHz and a maximum frequency of oscillation fmax of 40 GHz. The output power of 6.7 W/mm of the MOSHFETs measured at 7 GHz is about two times larger than that of HFETs. The results obtained demonstrate the suitability of GaN-based MOSHFETs for high-power electronics. [less ▲]

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See detailUltrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN
Mikulics, M.; Marso, Michel UL; Javorka, P. et al

in Applied Physics Letters (2005), 86(21), 211110

We have fabricated and characterized ultrafast metal-semiconductor-metal photodetectors based on low-temperature-grown sLTd GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields ... [more ▼]

We have fabricated and characterized ultrafast metal-semiconductor-metal photodetectors based on low-temperature-grown sLTd GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4-ps-wide electrical transients using 360-nm-wavelength and 100-fs-duration laser pulses, that is corresponding to the carrier lifetime of 720 fs in our LT GaN material. [less ▲]

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See detailGrowth and properties of GaN and AlN layers on silver substrates
Mikulics, Martin; Kočan, Martin; Rizzi, Angela et al

in Applied Physics Letters (2005), 87

We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with ... [more ▼]

We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN 11-22 orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of 0002 . Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current 10−3 A/cm2 . These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. [less ▲]

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See detailLow Current Dispersion and Low Bias-stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs
Bernát, J.; Pierobon, R.; Marso, Michel UL et al

in Physica Status Solidi C. Current Topics in Solid State Physics (2005), 2(7), 2676-2679

The performance of unpassivated GaN/AlGaN/GaN/SiC HEMTs with intentionally undoped and doped barrier structures are extensively studied. No drain current dispersion between DC and 50 ns pulses on doped ... [more ▼]

The performance of unpassivated GaN/AlGaN/GaN/SiC HEMTs with intentionally undoped and doped barrier structures are extensively studied. No drain current dispersion between DC and 50 ns pulses on doped devices and less than 10% dispersion on undoped ones is observed. The full (100%) current recovery on undoped sample was measured in 1μs. The drain current extrapolated from 2 GHz large signal measurements corresponds to the measured static drain current confirming negligible current dispersion of our devices. Insignificant (<5 %) degradation in overall device performance parameters (IDs, gm, fT, fmax, Pout) on both undoped and doped structures after 12-hour-long bias stress was obtained. These results documents that suitable device performances can be obtained also on unpassivated GaN-based HEMTs. [less ▲]

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See detailPhotomixers fabricated on nitrogen-ion-implanted GaAs
Mikulics, M.; Marso, Michel UL; Cámara Mayorga, I. et al

in Applied Physics Letters (2005), 87(4), 41106-1-3

We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion ... [more ▼]

We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion concentration of 3 1012 cm−2. The resulting material exhibited 110 fs carrier lifetime due to implantation-induced defects. Our photomixers were fabricated as metal-semiconductor-metal devices, placed at the feed point of a broadband antenna. Optoelectronic measurements were performed in the wavelength range between 350 nm and 950 nm. In comparison to their counterparts photomixers fabricated on low-temperature-grown GaAs the N+-implanted GaAs photomixers exhibit improvements on both the output power and responsivity. A maximal responsivity of above 100 mA/W was achieved and we did not observe any dependence of the mixer cut-off frequency on the bias voltage. These characteristics make N+-implanted GaAs the material of choice for efficient optoelectronic photomixers. [less ▲]

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See detailLarge-area traveling-wave photonic mixers for increased continuous terahertz power
Michael, E. A.; Vowinkel, B.; Schieder, R. et al

in Applied Physics Letters (2005), 86(11), 111120-111123

A large-aperture design for terahertz traveling-wave photomixers, continuously pumped free space by two detuned diode lasers, is proposed and experimentally verified for devices based on low-temperature ... [more ▼]

A large-aperture design for terahertz traveling-wave photomixers, continuously pumped free space by two detuned diode lasers, is proposed and experimentally verified for devices based on low-temperature-grown GaAs sLT-GaAsd. It combines the advantages of conventional interdigitated small-area structures and traveling-wave devices. An output power of 1 µW at the mixing frequency of 1 THz was measured in initial testing, which meets local oscillator power requirements for superconducting heterodyne mixer devices. [less ▲]

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