Pubblico ministero europeo e azione penale: stato dell’arte e prospettive di sviluppo

in Coppetta, M.G. (Ed.) Profili del processo penale nella Costituzione europea (2005)

Commento agli artt. 449-452 (Giudizio direttissimo)

in Conso, G.; Grevi, V. (Eds.) Commentario al codice di procedura penale (2005)

Halle-Neustadt - Ein Stadtteil mit Zukunft?

in Neustädter Nachrichten (2005)

Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires

in Nano Letters (2005), 5(5), 981-984

We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter ... [more ▼]

We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism. The essential ingredient for the interpretation of this effect is a diameter dependent recombination barrier, which arises from the interplay between column diameter and space charge layer extension at the column surface. [less ▲]

Tradeoffs in networks with positive and negative feedback

Scientific Conference (2005)

Application of robust model validation using SOSTOOLS to the study of G-Protein signalling in yeast

Scientific Conference (2005)

Two major methodological challenges in modeling biological systems are model (in)validation and parameter estimation. The traditional approach is to fit the model parameters to data. An alternative ... [more ▼]

Two major methodological challenges in modeling biological systems are model (in)validation and parameter estimation. The traditional approach is to fit the model parameters to data. An alternative approach pioneered by Packard, Frenklach, Seiler and colleagues (Frenklach et al., 2002) defines the range of parameter values that is consistent with the data while taking into account parametric and data uncertainty. If an invalidation certificate is found, the feasible parameter space is proved empty; otherwise, attempts to describe the feasible parameter space are carried out. We refer to this methodology as Robust Model Validation (RMV). Here we perform RMV using sum of squares (SOS) programs implemented by the MATLAB toolbox SOSTOOLS (Prajna et al., 2002). The principal advantage of SOS over conventional semidefinite programming (SDP) techniques such as the Sprocedure is the possibility of using higher-order multipliers to obtain tighter parameter bounds. We applied SOSTOOLS to a simple model of the yeast heterotrimeric G-protein cycle. We were able to invalidate the model based on real experimental data. Furthermore, using synthetic data that did not invalidate the model, we explored different techniques for representing the feasible parameter space. [less ▲]

The interfacial tension of the isotropic-nematic interface

Presentation (2005)

High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors

in Applied Physics Letters (2005), 87(14), 143501-143504

We report on SiO2 /AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors MOSHFETs , which exhibit a 6.7 W/mm power density at 7 GHz. Unpassivated and SiO2-passivated heterostructure ... [more ▼]

We report on SiO2 /AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors MOSHFETs , which exhibit a 6.7 W/mm power density at 7 GHz. Unpassivated and SiO2-passivated heterostructure field-effect transistors HFETs were also investigated for comparison. Deposited 12 nm thick SiO2 yielded an increase of the sheet carrier density from 7.6 .10^12 to 9.2 .10^12 cm−2 and a subsequent increase of the static drain saturation current from 0.75 to 1.09 A/mm. The small-signal rf characterization of the MOSHFETs showed an extrinsic current gain cutoff frequency fT of 24 GHz and a maximum frequency of oscillation fmax of 40 GHz. The output power of 6.7 W/mm of the MOSHFETs measured at 7 GHz is about two times larger than that of HFETs. The results obtained demonstrate the suitability of GaN-based MOSHFETs for high-power electronics. [less ▲]

Growth and properties of GaN and AlN layers on silver substrates

in Applied Physics Letters (2005), 87

We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with ... [more ▼]

We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN 11-22 orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of 0002 . Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current 10−3 A/cm2 . These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. [less ▲]

Photomixers fabricated on nitrogen-ion-implanted GaAs

in Applied Physics Letters (2005), 87(4), 41106-1-3

We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion ... [more ▼]

We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion concentration of 3 1012 cm−2. The resulting material exhibited 110 fs carrier lifetime due to implantation-induced defects. Our photomixers were fabricated as metal-semiconductor-metal devices, placed at the feed point of a broadband antenna. Optoelectronic measurements were performed in the wavelength range between 350 nm and 950 nm. In comparison to their counterparts photomixers fabricated on low-temperature-grown GaAs the N+-implanted GaAs photomixers exhibit improvements on both the output power and responsivity. A maximal responsivity of above 100 mA/W was achieved and we did not observe any dependence of the mixer cut-off frequency on the bias voltage. These characteristics make N+-implanted GaAs the material of choice for efficient optoelectronic photomixers. [less ▲]