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   Heavy Alkali Treatment of Cu(In,Ga)Se2 Solar Cells: Surface versus Bulk effectsSiebentritt, Susanne  ; ; et alin Advanced Energy Materials (2020) Detailed reference viewed: 43 (2 UL)Thin-film (Sb,Bi)2Se3 Semiconducting Layers with Tunable Band Gaps Below 1 eV for Photovoltaic ApplicationsWeiss, Thomas ; Arnou, Panagiota ; Melchiorre, Michele et alin Physical Review Applied (2020), 14 Detailed reference viewed: 34 (0 UL)Continuous-wave laser annealing of metallic layers for CuInSe2 solar cell applications: effect of preheating treatment on grain growthArnou, Panagiota ; Lomuscio, Alberto ; Weiss, Thomas et alin RSC Advances (2020) Detailed reference viewed: 69 (6 UL)Time-resolved photoluminescence on double graded Cu(In,Ga)Se2 – Impact of front surface recombination and its temperature dependenceWeiss, Thomas ; ; Wolter, Max et alin Science and Technology of Advanced Materials (2019), 20 Detailed reference viewed: 101 (2 UL)Alkali treatments of Cu(In,Ga)Se2 thin‐film absorbers and their impact on transport barriersWerner, Florian ; Wolter, Max ; Siebentritt, Susanne et alin Progress in Photovoltaics (2018) Detailed reference viewed: 162 (5 UL)Post-deposition treatment of Cu2ZnSnSe4 with alkalisRey, Germain ; Babbe, Finn ; Weiss, Thomas et alin Thin Solid Films (2016), 633 Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor ... [more ▼] Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor (from 0.58 to 0.61 and 0.62), open-circuit voltage (Voc) (from 314 mV to 337 mV and 325 mV) and short-circuit current density (from 35.3 mA⋅cm −2 to 38.3 mA⋅cm −2 and 38.6 mA⋅cm −2). Voc improvement was higher for solar cells with NaF treatment due to an increase in radiative efficiency at room temperature and shallower defect activation energy as determined by photoluminescence (PL) and temperature dependent admittance spectroscopy, respectively. In the case of KF treatment, red-shift of the PL, higher band tail density of state and donor activation energy deeper in the band gap were limiting further improvement of the Voc compared to NaF treatment. [less ▲] Detailed reference viewed: 185 (10 UL)Impact of annealing on electrical properties of Cu2ZnSnSe4 absorber layersWeiss, Thomas ; Redinger, Alex ; Rey, Germain et alin Journal of Applied Physics (2016), 120 Detailed reference viewed: 171 (10 UL) Ordering kesterite improves solar cells:A low temperature post-deposition annealing studyRey, Germain ; Weiss, Thomas ; Sendler, Jan et alin Solar Energy Materials & Solar Cells (2016), 151 Detailed reference viewed: 231 (17 UL)ELECTRICAL CHARACTERIZATION OF KESTERITE THIN FILM ABSORBERS AND SOLAR CELLSWeiss, Thomas Doctoral thesis (2015) Detailed reference viewed: 149 (16 UL)What is the band gap of kesterite?Siebentritt, Susanne ; Rey, Germain ; Finger, Ashley et alin Solar Energy Materials & Solar Cells (2015) Detailed reference viewed: 226 (7 UL)Highly conductive ZnO films with high near infrared transparencyHala, Matej ; ; Redinger, Alex et alin Progress in Photovoltaics: Research and Applications (2015) We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency ... [more ▼] We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency (RF) biasing of growing ZnO films during their deposition by non-reactive sputtering makes them as conductive as when doped by aluminium (ρ≤1·10−3Ω cm). The films prepared with additional RF biasing possess lower free-carrier concentration and higher free-carrier mobility than Al-doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the near infrared region (NIR). Furthermore, these films exhibit good ambient stability and lower high-temperature stability than the AZO films of the same thickness. We also present the characteristics of Cu(InGa)Se2, CuInSe2 and Cu2ZnSnSe4-based solar cells prepared with the transparent window bilayer formed of the isolating and conductive ZnO films and compare them to their counterparts with a standard ZnO/AZO bilayer. We show that the solar cells with nominally undoped ZnO as their transparent conductive oxide layer exhibit an improved quantum efficiency for λ > 900 nm, which leads to a higher short circuit current density JSC. This aspect is specifically beneficial in preparation of the Cu2ZnSnSe4 solar cells with band gap down to 0.85 eV; our champion device reached a JSC of nearly 39 mAcm−2, an open circuit voltage of 378 mV, and a power conversion efficiency of 8.4 %. [less ▲] Detailed reference viewed: 275 (15 UL)Detection of a MoSe2 secondary phase layer in CZTSe by spectroscopic ellipsometry; Mousel, Marina ; Redinger, Alex et alin JOURNAL OF APPLIED PHYSICS (2015), 118 Detailed reference viewed: 186 (6 UL)The band gap of Cu2ZnSnSe4: Effect of order-disorderRey, Germain ; Redinger, Alex ; Sendler, Jan et alin Applied Physics Letters (2014), 105 Detailed reference viewed: 224 (21 UL)Direct Evaluation of Defect Distributions From Admittance SpectroscopyWeiss, Thomas ; Redinger, Alex ; Regesch, David et alin IEEE JOURNAL OF PHOTOVOLTAICS (2014), 4 Detailed reference viewed: 168 (12 UL)Different Bandgaps in Cu2ZnSnSe4 : a high temperature coevaporation studyRedinger, Alex ; Sendler, Jan ; Djemour, Rabie et alin IEEE Journal of Photovoltaics (2014) Detailed reference viewed: 166 (8 UL)Molecular beam epitaxy of Cu2ZnSnSe4 thin films grown on GaAs(001)Redinger, Alex ; Djemour, Rabie ; Weiss, Thomas et alScientific Conference (2013, June) Detailed reference viewed: 146 (3 UL)Role of high series resistance in admittance spectroscopy of kesterite solar cellsWeiss, Thomas ; Redinger, Alex ; Luckas, Jennifer Maria et alScientific Conference (2013) Detailed reference viewed: 144 (11 UL)Admittance spectroscopy in kesterite solar cells: Defect signal or circuit responseWeiss, Thomas ; Redinger, Alex ; Luckas, Jennifer Maria et alin Applied Physics Letters (2013) Detailed reference viewed: 185 (7 UL)Cu-rich precursors improve kesterite solar cellsMousel, Marina ; ; Djemour, Rabie et alin Advanced Energy Materials (2013), 4 Detailed reference viewed: 178 (11 UL) |
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