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   Electrical Control of the Reflectance of Porous Silicon Layers; Marso, Michel  ; et alin Journal of Porous Materials (2000), 7((1/2/3),), 205-208 In this paper we demonstrate the filling of porous silicon (PS) layers with liquid crystals (LC’s) in order to control the reflectance electrically. The preparation of PS and the choice of the right group ... [more ▼] In this paper we demonstrate the filling of porous silicon (PS) layers with liquid crystals (LC’s) in order to control the reflectance electrically. The preparation of PS and the choice of the right group of LC’s will be presented. Especially an oxidation of PS is necessary so that the methods and parameters of oxidation will also be discussed. As a first result the increasing and decreasing of the thickness oscillations in the reflectance as a function of the applied voltage can be observed. [less ▲] Detailed reference viewed: 27 (0 UL)Formation of Porous Silicon Filter Structures with Different Properties on Small Areas; ; et al in Journal of Porous Materials (2000), 7 (1/2/3) Porous silicon (PS) layer systems have a broad range of possible applications. An advantage is the good control of the refractive index and the etch rate of the layers by the applied current density and ... [more ▼] Porous silicon (PS) layer systems have a broad range of possible applications. An advantage is the good control of the refractive index and the etch rate of the layers by the applied current density and the time respectively. For micro-optical devices you need patterned PS. For some optical devices it is not sufficient to have only one filter but it is necessary to form filters with different properties on a small area. We applied a method (M. Frank, U.B. Schallenberg, N. Kaiser, and W. Buß, in Conference on Miniaturized Systems with Microoptics and Micromechanics, edited by M.E. Moamedi, L.J. Hornbeck, and K.S.J. Pister (SPIE, San Jose, 1997), SPIE Proceedings Series 3008, p. 265) to PS which fits this goal by the following steps: fabrication of the desired reflectors below each other and partial removal of upper reflectors with reactive ion etching (RIE). The technological aspects of patterning PS after the fabrication are an important topic of this work. Problems are discussed in detail and solutions are given. [less ▲] Detailed reference viewed: 42 (0 UL)Color-Sensitive Photodetector Based on Porous Silicon Superlattices; Marso, Michel ; et alin Thin Solid Films (1997), 297(1997), 241-244 Detailed reference viewed: 82 (0 UL)Color-Sensistive Si-Photodiode Using Porous Silicon Interference Filters; ; Marso, Michel et alin Japanese Journal of Applied Physics (1997), 36(1997), 24-26 Detailed reference viewed: 22 (0 UL)Integration of Porous Silicon Interference Filters in Si-Photodiodes; ; Marso, Michel et alin Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy (1996) Detailed reference viewed: 25 (0 UL)Extended Quantum Model For Porous Silicon Formation; ; et al in Mat. Res. Soc. Symp. Proc. Vol. 358 (1995) Detailed reference viewed: 47 (0 UL)An Extended Quantum Model for Porous Silicon Formation; Marso, Michel ; et alin Journal of the Electrochemical Society (1995), 142(1995), 615-620 Detailed reference viewed: 74 (0 UL) |
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