References of "Stanček, Stanislav"
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See detailReduction of skin effect losses in double-level-T-gate structure
Mikulics, Martin; Hardtdegen, Hilde; Arango, Y. C. et al

in Applied Physics Letters (2014), 105

We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process ... [more ▼]

We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length Lg=200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 um gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of fmax value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions. [less ▲]

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See detailFemtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates,
Mikulics, Martin; Adam, Roman; Sofer, Zdenek et al

in Semiconductor Science & Technology (2010), 25(7), 75001

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