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See detailDemonstration of Nitrogen Carrier Gas in MOVPE For InP/InGaAs-Based High Frequency and Optoelectronic Integrated Devices
Hardtdegen, H.; Marso, Michel UL; Horstmann, M. et al

in Proceedings of the 9th International Conference on InP and Related Materials, Hyannis, Massachusetts, USA (1997)

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See detail0.1 µm T-gate Al-free InP/InGaAs/InP pHEMTs for W-Band Applications Using a Nitrogen Carrier for LP-MOCVD Growth
Schimpf, K.; Sommer, M.; Horstmann, M. et al

in IEEE Electron Device Letters (1997), 18

We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and ... [more ▼]

We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and channel composition on the performance of these devices is investigated.We demonstrate that optimum dc and RF performance using highly strained channels can be obtained only if additional composite channels are grown. The cutoff frequencies fT =160 GHz and fmax=260 GHz for a 0.1- um T-gate device indicate the suitability of our devices for W-Band applications. [less ▲]

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