![]() Shukla, Sudhanshu ![]() ![]() ![]() in Physical Review Materials (2021), 5 Detailed reference viewed: 132 (7 UL)![]() Chu, van Ben ![]() ![]() ![]() in ACS Applied Materials and Interfaces (2021), 13 Detailed reference viewed: 196 (13 UL)![]() Ramirez Sanchez, Omar ![]() ![]() in Solar RRL (2021) The power conversion efficiency boost of Cu(In,Ga)Se2 in the past years has been possible due to the incorporation of heavy alkali atoms. Their addition through post-deposition treatments results in an ... [more ▼] The power conversion efficiency boost of Cu(In,Ga)Se2 in the past years has been possible due to the incorporation of heavy alkali atoms. Their addition through post-deposition treatments results in an improvement of the open-circuit voltage, which origin has been associated with grain boundaries. The present work discusses the effect of potassium fluoride post-deposition treatments on the optoelectronic properties of a series of sodium-free Cu(In,Ga)Se2 single crystals with varying Cu and Ga content. Results suggest that improvement of the quasi-Fermi level splitting can be achieved despite the absence of grain boundaries, being greater in low-gallium Cu-poor absorbers. Secondary ion mass spectrometry reveals the presence of potassium inside the bulk of the films, suggesting that transport of potassium can occur through grain interiors. In addition, a type inversion from n to p in KF-treated low-gallium Cu(In,Ga)Se2 is observed, which along a carrier lifetime study demonstrates that potassium can act as a dopant. The fact that potassium by its own can alter the optoelectronic properties of Cu(In,Ga)Se2 single crystals demonstrates that the effect of post-deposition treatments goes beyond grain boundary passivation. [less ▲] Detailed reference viewed: 283 (37 UL)![]() Siopa, Daniel ![]() ![]() in scientific reports (2020) Detailed reference viewed: 84 (2 UL)![]() Weiss, Thomas ![]() ![]() ![]() in Physical Review Applied (2020), 14 Detailed reference viewed: 152 (11 UL)![]() ; Siopa, Daniel ![]() ![]() in Results in Physics (2019), 12 Detailed reference viewed: 203 (4 UL)![]() ; Siopa, Daniel ![]() in IEEE (2018) Detailed reference viewed: 192 (6 UL) |
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