References of "Siebentritt, Susanne 50003089"
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See detailAbsorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cells
Sood, Mohit UL; Elanzeery, Hossam UL; Adeleye, Damilola UL et al

in Progress in Photovoltaics (2020)

Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown ... [more ▼]

Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu-poor conditions but not under Cu excess.. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu-rich and Cu-poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu-rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu-poor selenide device low-temperature HT leads to passivation of bulk, whereas in Cu-rich devices no such passivation was observed. The Cu-rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu-rich selenides, whereas it increases shunt resistance in Cu-rich sulfides.. The origin of these changes in device performance was investigated with capacitance-voltage measurement which shows the considerable decrease in carrier concentration with HT in Cu-poor CuInSe2, and temperature dependent current-voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly-doped interfacial p+ layer device model in Cu-rich selenide absorbers and explain the discrepancy between Cu-poor and Curich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber. [less ▲]

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See detailPassivation of the CuInSe2 surface via cadmium pre-electrolyte treatment
Kameni Boumenou, Christian UL; Babbe, Finn; Elizabeth, Amala et al

in Physical Review Materials (2020)

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See detailPhonon coupling and shallow defects in CuInS2
Lomuscio, Alberto UL; Sood, Mohit UL; Melchiorre, Michele UL et al

in Physical Review. B (2020), 101(8), 085119-

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See detailOn the chemistry of grain boundaries in CuInS2 film
Schwarz, Torsten; Lomuscio, Alberto UL; Siebentritt, Susanne UL et al

in Nano Energy (2020), 76

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See detailHeavy Alkali Treatment of Cu(In,Ga)Se2 Solar Cells: Surface versus Bulk effects
Siebentritt, Susanne UL; Avancini, Enrico; Bär, Marcus et al

in Advanced Energy Materials (2020)

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See detailSurface characterization of epitaxial Cu-rich CuInSe2 absorbers
Lanzoni, Evandro; Spindler, Conrad UL; Ramirez Sanchez, Omar UL et al

in IEEE (2020)

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See detailChemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface
Colombara, Diego UL; Elanzeery, Hossam UL; Nicoara, Nicoleta et al

in Nature Communications (2020)

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See detailOxidation as Key Mechanism for Efficient Interface Passivation in Cu(In,Ga)Se2 Thin-Film Solar Cells
Werner, Florian UL; Veith-Wolf, Boris; Spindler, Conrad UL et al

in Physical Review Applied (2020)

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See detailPhotoluminescence-Based Method for Imaging Buffer Layer Thickness in CIGS Solar Cells
Rey, Germain UL; Paduthol, Appu; Sun, Kaiwen et al

in IEEE Journal of Photovoltaics (2020)

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See detailElectronic defects in Cu(In,Ga)Se2: Towards a comprehensive model
Spindler, Conrad UL; Babbe, Finn UL; Wolter, Max UL et al

in Physical Review Materials (2019), 3

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See detailSurface characterization of epitaxial Cu-rich CuInSe2 absorbers
Martin Lanzoni, Evandro UL; Spindler, Conrad UL; Ramirez Sanchez, Omar UL et al

in IEEE Photovoltaic Specialists Conference. Conference Record (2019, July)

We investigated the electrical properties of epitaxial Cu-rich CuInSe 2 by Kelvin probe force microscopy (KPFM) under ambient and ultra-high vacuum conditions. We first measured the sample under ambient ... [more ▼]

We investigated the electrical properties of epitaxial Cu-rich CuInSe 2 by Kelvin probe force microscopy (KPFM) under ambient and ultra-high vacuum conditions. We first measured the sample under ambient conditions before and after potassium cyanide (KCN) etching. In both cases, we do not see any substantial contrast in the surface potential data; furthermore, after the KCN etching we observed outgrowths with a height around 2nm over the sample surface. On the other hand, the KPFM measurements under ultra-high vacuum conditions show a work function dependence according to the surface orientation of the Cu-rich CuInSe 2 crystal. Our results show the possibility to increase the efficiency of epitaxial Cu-rich CuInSe 2 by growing the materials in the appropriated surface orientation where the variations in work function are reduced. [less ▲]

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See detailQuasi-Fermi-Level Splitting of Cu-Poor and Cu-Rich CuInS2 Absorber Layers
Lomuscio, Alberto UL; Rödel, Tobias UL; Schwarz, Torsten et al

in Physical Review Applied (2019), 11

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See detailChallenge in Cu-rich CuInSe2 thin film solar cells: Defect caused by etching
Elanzeery, Hossam UL; Melchiorre, Michele UL; Sood, Mohit UL et al

in Physical Review Materials (2019), 3

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See detailVariable chemical decoration of extended defects in Cu-poor Cu2ZnSnSe4 thin films
Schwarz, Torsten; Redinger, Alex UL; Siebentritt, Susanne UL et al

in Physical Review Materials (2019), 3

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See detailCan we see defects in capacitance measurements of thin‐film solar cells ?
Werner, Florian UL; Babbe, Finn UL; Elanzeery, Hossam UL et al

in Progress in Photovoltaics (2019), 27

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See detailThe hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layers
Babbe, Finn UL; Elanzeery, Hossam UL; Wolter, Max UL et al

in Journal of Physics: Condensed Matter (2019), 31

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See detailTime-resolved photoluminescence on double graded Cu(In,Ga)Se2 – Impact of front surface recombination and its temperature dependence
Weiss, Thomas UL; Carron, Romain; Wolter, Max UL et al

in Science and Technology of Advanced Materials (2019), 20

Detailed reference viewed: 101 (2 UL)