![]() Weiss, Thomas ![]() ![]() in Physical Review Applied (2023) Detailed reference viewed: 130 (1 UL)![]() ; Adeleye, Damilola ![]() ![]() in APL Energy (2023), 1 Detailed reference viewed: 28 (2 UL)![]() Siebentritt, Susanne ![]() ![]() in Science China: Physics, Mechanics and Astronomy (2022) Detailed reference viewed: 53 (3 UL)![]() Singh, Ajay ![]() ![]() ![]() in 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC) (2022, November 14) Detailed reference viewed: 98 (7 UL)![]() Siebentritt, Susanne ![]() ![]() in Faraday Discussions (2022) Absolute photoluminescence measurements present a tool to predict the quality of photovoltaic absorber materials before finishing the solar cells. Quasi Fermi level splitting predicts the maximal open ... [more ▼] Absolute photoluminescence measurements present a tool to predict the quality of photovoltaic absorber materials before finishing the solar cells. Quasi Fermi level splitting predicts the maximal open circuit voltage. However, various methods to extract quasi Fermi level splitting are plagued by systematic errors in the range of 10–20 meV. It is important to differentiate between the radiative loss and the shift of the emission maximum. They are not the same and when using the emission maximum as the “radiative” band gap to extract the quasi Fermi level splitting from the radiative efficiency, the quasi Fermi level splitting is 10 to 40 meV too low for a typical broadening of the emission spectrum. However, radiative efficiency presents an ideal tool to compare different materials without determining the quasi Fermi level splitting. For comparison with the open circuit voltage, a fit of the high energy slope to generalised Planck’s law gives more reliable results if the fitted temperature, i.e. the slope of the high energy part, is close to the actual measurement temperature. Generalised Planck’s law also allows the extraction of a non-absolute absorptance spectrum, which enables a comparison between the emission maximum energy and the absorption edge. We discuss the errors and the indications when they are negligible and when not. [less ▲] Detailed reference viewed: 99 (17 UL)![]() Ramirez Sanchez, Omar ![]() ![]() ![]() in APL Materials (2022) Detailed reference viewed: 52 (4 UL)![]() Sood, Mohit ![]() ![]() ![]() in Faraday Discussions of the Chemical Society (2022) Detailed reference viewed: 35 (0 UL)![]() Sood, Mohit ![]() ![]() in Journal of Physics : Energy (2022), 4 Detailed reference viewed: 32 (2 UL)![]() Dale, Phillip ![]() ![]() ![]() in Faraday Discussions (2022) Detailed reference viewed: 69 (3 UL)![]() Wang, Taowen ![]() ![]() ![]() in Advanced Energy Materials (2022) Detailed reference viewed: 40 (12 UL)![]() Siebentritt, Susanne ![]() ![]() ![]() in Physica Status Solidi. Rapid Research Letters (2022), 2200126 Detailed reference viewed: 152 (9 UL)![]() ; ; Lomuscio, Alberto ![]() in Journal of Physical Chemistry. C, Nanomaterials and interfaces (2022), 125 Detailed reference viewed: 62 (2 UL)![]() ; ; et al in Journal of Materials Chemistry (2022) Detailed reference viewed: 43 (0 UL)![]() ; ; et al in Journal of Synchrotron Radiation (2022), 29 Detailed reference viewed: 44 (2 UL)![]() Dale, Phillip ![]() ![]() in Faraday Discussions (2022) Detailed reference viewed: 60 (1 UL)![]() Sood, Mohit ![]() ![]() in ACS Applied Materials and Interfaces (2022), 14 Detailed reference viewed: 58 (6 UL)![]() Weiss, Thomas ![]() ![]() in Progress in Photovoltaics (2022) Detailed reference viewed: 30 (0 UL)![]() Sood, Mohit ![]() ![]() in Progress in Photovoltaics (2021) Interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open ... [more ▼] Interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open-circuit voltage (VOC,ex), that is, a VOC deficit. Aspirations to reach higher VOC,ex values require a comprehensive knowledge of the connection between VOC deficit and interface recombination. Here, a near-surface defect model is developed for copper indium di-selenide solar cells grown under Cu-excess conditions. These cell show the typical signatures of interface recombination: a strong disparity between VOC,in and VOC,ex, and extrapolation of the temperature dependent q·VOC,ex to a value below the bandgap energy. Yet, these cells do not suffer from reduced interface bandgap or from Fermi-level pinning. The model presented is based on experimental analysis of admittance and deep-level transient spectroscopy, which show the signature of an acceptor defect. Numerical simulations using the near-surface defects model show the signatures of interface recombination without the need for a reduced interface bandgap or Fermi-level pinning. These findings demonstrate that the VOC,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current–voltage measurements to identify the cause of interface recombination in the devices. [less ▲] Detailed reference viewed: 79 (10 UL)![]() Martin Lanzoni, Evandro ![]() ![]() ![]() in Nano Energy (2021), 88 An in-depth understanding of the electronic properties of grain boundaries (GBs) in polycrystalline semiconductor absorbers is of high importance since their charge carrier recombination rates may be very ... [more ▼] An in-depth understanding of the electronic properties of grain boundaries (GBs) in polycrystalline semiconductor absorbers is of high importance since their charge carrier recombination rates may be very high and hence limit the solar cell device performance. Kelvin Probe Force Microscopy (KPFM) is the method of choice to investigate GB band bending on the nanometer scale and thereby helps to develop passivation strategies. Here, it is shown that the workfunction, measured with amplitude modulation (AM)-KPFM, which is by far the most common KPFM measurement mode, is prone to exhibit measurement artifacts at grain boundaries on typical solar cell absorbers such as Cu(In,Ga)Se2 and CH3NH3PbI3. This is a direct consequence of a change in the cantilever–sample distance that varies on rough samples. Furthermore, we critically discuss the impact of different environments (air versus vacuum) and show that air exposure alters the GB and facet contrast, which leads to erroneous interpretations of the GB physics. Frequency modulation (FM)-KPFM measurements on non-air-exposed CIGSe and perovskite absorbers show that the amount of band bending measured at the GB is negligible and that the electronic landscape of the semiconductor surface is dominated by facet-related contrast due to the polycrystalline nature of the absorbers. [less ▲] Detailed reference viewed: 175 (18 UL)![]() Shukla, Sudhanshu ![]() ![]() ![]() in Joule (2021), 5 Detailed reference viewed: 168 (10 UL) |
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