![]() Sood, Mohit ![]() ![]() ![]() in Progress in Photovoltaics (2020) Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown ... [more ▼] Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu-poor conditions but not under Cu excess.. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu-rich and Cu-poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu-rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu-poor selenide device low-temperature HT leads to passivation of bulk, whereas in Cu-rich devices no such passivation was observed. The Cu-rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu-rich selenides, whereas it increases shunt resistance in Cu-rich sulfides.. The origin of these changes in device performance was investigated with capacitance-voltage measurement which shows the considerable decrease in carrier concentration with HT in Cu-poor CuInSe2, and temperature dependent current-voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly-doped interfacial p+ layer device model in Cu-rich selenide absorbers and explain the discrepancy between Cu-poor and Curich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber. [less ▲] Detailed reference viewed: 114 (8 UL)![]() Kameni Boumenou, Christian ![]() in Physical Review Materials (2020) Detailed reference viewed: 145 (10 UL)![]() Lomuscio, Alberto ![]() ![]() ![]() in Physical Review. B (2020), 101(8), 085119- Detailed reference viewed: 185 (19 UL)![]() Colombara, Diego ![]() ![]() in Nature Communications (2020) Detailed reference viewed: 164 (3 UL)![]() Werner, Florian ![]() ![]() in Physical Review Applied (2020) Detailed reference viewed: 172 (2 UL)![]() Werner, Florian ![]() ![]() in Scientific Reports (2020) Detailed reference viewed: 135 (5 UL)![]() Siebentritt, Susanne ![]() in Advanced Energy Materials (2020) Detailed reference viewed: 67 (5 UL)![]() ; Lomuscio, Alberto ![]() ![]() in Nano Energy (2020), 76 Detailed reference viewed: 62 (1 UL)![]() ; Spindler, Conrad ![]() ![]() in IEEE (2020) Detailed reference viewed: 98 (17 UL)![]() Rey, Germain ![]() in IEEE Journal of Photovoltaics (2020) Detailed reference viewed: 93 (10 UL)![]() Weiss, Thomas ![]() ![]() ![]() in Physical Review Applied (2020), 14 Detailed reference viewed: 61 (3 UL)![]() Spindler, Conrad ![]() ![]() ![]() in Physical Review Materials (2019), 3 Detailed reference viewed: 185 (15 UL)![]() Martin Lanzoni, Evandro ![]() ![]() ![]() in IEEE Photovoltaic Specialists Conference. Conference Record (2019, July) We investigated the electrical properties of epitaxial Cu-rich CuInSe 2 by Kelvin probe force microscopy (KPFM) under ambient and ultra-high vacuum conditions. We first measured the sample under ambient ... [more ▼] We investigated the electrical properties of epitaxial Cu-rich CuInSe 2 by Kelvin probe force microscopy (KPFM) under ambient and ultra-high vacuum conditions. We first measured the sample under ambient conditions before and after potassium cyanide (KCN) etching. In both cases, we do not see any substantial contrast in the surface potential data; furthermore, after the KCN etching we observed outgrowths with a height around 2nm over the sample surface. On the other hand, the KPFM measurements under ultra-high vacuum conditions show a work function dependence according to the surface orientation of the Cu-rich CuInSe 2 crystal. Our results show the possibility to increase the efficiency of epitaxial Cu-rich CuInSe 2 by growing the materials in the appropriated surface orientation where the variations in work function are reduced. [less ▲] Detailed reference viewed: 60 (7 UL)![]() Carr, Constance ![]() ![]() ![]() Article for general public (2019) Detailed reference viewed: 195 (9 UL)![]() Lomuscio, Alberto ![]() ![]() in Physical Review Applied (2019), 11 Detailed reference viewed: 473 (20 UL)![]() Elanzeery, Hossam ![]() ![]() ![]() in Physical Review Materials (2019), 3 Detailed reference viewed: 147 (13 UL)![]() ; Redinger, Alex ![]() ![]() in Physical Review Materials (2019), 3 Detailed reference viewed: 150 (6 UL)![]() Weiss, Thomas ![]() ![]() in Science and Technology of Advanced Materials (2019), 20 Detailed reference viewed: 125 (2 UL)![]() Spindler, Conrad ![]() ![]() ![]() in Journal of Applied Physics (2019) Detailed reference viewed: 100 (13 UL)![]() Werner, Florian ![]() ![]() ![]() in Progress in Photovoltaics (2019), 27 Detailed reference viewed: 147 (1 UL) |
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