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Showing results 1 to 20 of 151
   Passivation of the CuInSe2 surface via cadmium pre-electrolyte treatmentKameni Boumenou, Christian  ; ; et alin Physical Review Materials (2020) Detailed reference viewed: 91 (5 UL)Phonon coupling and shallow defects in CuInS2Lomuscio, Alberto ; Sood, Mohit ; Melchiorre, Michele et alin Physical Review. B (2020), 101(8), 085119- Detailed reference viewed: 119 (8 UL)Surface characterization of epitaxial Cu-rich CuInSe2 absorbers; Spindler, Conrad ; Ramirez Sanchez, Omar et alin IEEE (2020) Detailed reference viewed: 60 (7 UL) Photoluminescence-Based Method for Imaging Buffer Layer Thickness in CIGS Solar CellsRey, Germain ; ; et alin IEEE Journal of Photovoltaics (2020) Detailed reference viewed: 62 (8 UL)Oxidation as Key Mechanism for Efficient Interface Passivation in Cu(In,Ga)Se2 Thin-Film Solar CellsWerner, Florian ; ; Spindler, Conrad et alin Physical Review Applied (2020) Detailed reference viewed: 140 (0 UL)Ultra-thin passivation layers in cu(in,Ga)Se2 thin-film solar cells: full-area passivated front contacts and their impact on bulk dopingWerner, Florian ; ; Melchiorre, Michele et alin Scientific Reports (2020) Detailed reference viewed: 107 (0 UL)Heavy Alkali Treatment of Cu(In,Ga)Se2 Solar Cells: Surface versus Bulk effectsSiebentritt, Susanne ; ; et alin Advanced Energy Materials (2020) Detailed reference viewed: 35 (2 UL)Electronic defects in Cu(In,Ga)Se2: Towards a comprehensive modelSpindler, Conrad ; Babbe, Finn ; Wolter, Max et alin Physical Review Materials (2019), 3 Detailed reference viewed: 153 (14 UL)"Keine Schwarzseher" Forscher der Universität Luxemburg unterstützen Jugendliche von "Fridays for Future"Carr, Constance ; König, Ariane ; Reckinger, Rachel et alArticle for general public (2019) Detailed reference viewed: 172 (8 UL)Quasi-Fermi-Level Splitting of Cu-Poor and Cu-Rich CuInS2 Absorber LayersLomuscio, Alberto ; Rödel, Tobias ; et alin Physical Review Applied (2019), 11 Detailed reference viewed: 433 (10 UL)Challenge in Cu-rich CuInSe2 thin film solar cells: Defect caused by etchingElanzeery, Hossam ; Melchiorre, Michele ; Sood, Mohit et alin Physical Review Materials (2019), 3 Detailed reference viewed: 128 (12 UL)Variable chemical decoration of extended defects in Cu-poor Cu2ZnSnSe4 thin films; Redinger, Alex ; Siebentritt, Susanne et alin Physical Review Materials (2019), 3 Detailed reference viewed: 135 (6 UL)The hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layersBabbe, Finn ; Elanzeery, Hossam ; Wolter, Max et alin Journal of Physics: Condensed Matter (2019), 31 Detailed reference viewed: 86 (3 UL)Can we see defects in capacitance measurements of thin‐film solar cells ?Werner, Florian ; Babbe, Finn ; Elanzeery, Hossam et alin Progress in Photovoltaics (2019), 27 Detailed reference viewed: 126 (1 UL)Time-resolved photoluminescence on double graded Cu(In,Ga)Se2 – Impact of front surface recombination and its temperature dependenceWeiss, Thomas ; ; Wolter, Max et alin Science and Technology of Advanced Materials (2019), 20 Detailed reference viewed: 95 (2 UL)Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductorsSpindler, Conrad ; Galvani, Thomas ; Wirtz, Ludger et alin Journal of Applied Physics (2019) Detailed reference viewed: 68 (10 UL)Influence of stoichiometry and temperature on quasi Fermi level splitting of sulfide CIS absorber layersLomuscio, Alberto ; Melchiorre, Michele ; Siebentritt, Susanne in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (2018, November 29) CuInS-based solar cells suffer from a low open circuit voltage. Absorbers grown under both Cu-excess and Cudeficiency have been used to fabricate record efficiency photovoltaic cells. In this work, we ... [more ▼] CuInS-based solar cells suffer from a low open circuit voltage. Absorbers grown under both Cu-excess and Cudeficiency have been used to fabricate record efficiency photovoltaic cells. In this work, we present the influence of stoichiometry on the quality of absorbers by means of calibrated room temperature photoluminescence and quasi Fermi level splitting evaluation (qFLs). Deep defects-related photoluminescence decreases using higher Cu/In ratio, leading to a corresponding improvement in qFLs, with values above 900 meV for high copper rich absorbers. © 2018 IEEE. [less ▲] Detailed reference viewed: 113 (2 UL)High‐performance low bandgap thin film solar cells for tandem applicationsElanzeery, Hossam ; Babbe, Finn ; Melchiorre, Michele et alin Progress in Photovoltaics (2018) Thin film tandem solar cells provide a promising approach to achieve high efficiencies. These tandem cells require at least a bottom low bandgap and an upper high bandgap solar cell. In this contribution ... [more ▼] Thin film tandem solar cells provide a promising approach to achieve high efficiencies. These tandem cells require at least a bottom low bandgap and an upper high bandgap solar cell. In this contribution, 2 high‐performance Cu(In,Ga)Se2 cells with bandgaps as low as 1.04 and 1.07 eV are presented. These cells have shown certified efficiencies of 15.7% and 16.6% respectively. Measuring these cells under a 780‐nm longpass filter, corresponding to the bandgap of a typical top cell in tandem applications (1.57 eV), they achieved efficiencies of 7.9% and 8.3%. Admittance measurements showed no recombination active deep defects. One additional high‐performance CuInSe2 thin film solar cell with bandgap of 0.95 eV and efficiency of 14.1% is presented. All 3 cells have the potential to be integrated as bottom low bandgap cells in thin film tandem applications achieving efficiencies around 24% stacked with an efficient high bandgap top cell. [less ▲] Detailed reference viewed: 197 (5 UL)The Optical Diode Ideality Factor Enables Fast Screening of Semiconductors for Solar CellsBabbe, Finn ; ; Siebentritt, Susanne in Solar RRL (2018), 1800248 Detailed reference viewed: 147 (5 UL)Absorption Coefficient of a Semiconductor Thin Film from PhotoluminescenceRey, Germain ; Spindler, Conrad ; Rachad, Wafae et alin Physical Review Applied (2018), 9 Detailed reference viewed: 177 (13 UL) |
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