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   Photoluminescence studies in epitaxial CZTSe thin filmsSendler, Jan  ; Thevenin, Maxime ; Werner, Florian et alin Journal of Applied Physics (2016), 120 Detailed reference viewed: 253 (6 UL) Ordering kesterite improves solar cells:A low temperature post-deposition annealing studyRey, Germain ; Weiss, Thomas ; Sendler, Jan et alin Solar Energy Materials and Solar Cells (2016), 151 Detailed reference viewed: 268 (18 UL)Cu–Zn disorder and band gap fluctuations in Cu2ZnSn(S,Se)4: Theoretical and experimental investigations; Larsen, Jes K. ; et alin Physica Status Solidi B. Basic Research (2016), 253(2), 247-254 Detailed reference viewed: 179 (1 UL)What is the band gap of kesterite?Siebentritt, Susanne ; Rey, Germain ; Finger, Ashley et alin Solar Energy Materials and Solar Cells (2015) Detailed reference viewed: 270 (8 UL)Different Bandgaps in Cu2ZnSnSe4: A High Temperature Coevaporation StudyRedinger, Alex ; Sendler, Jan ; et alin IEEE Journal of Photovoltaics (2015), 5(2), 641-648 We present a high-temperature Cu2ZnSnSe4 coevaporation study, where solar cells with a power conversion efficiency of 7.1 have been achieved. The process is monitored with laser light scattering in order ... [more ▼] We present a high-temperature Cu2ZnSnSe4 coevaporation study, where solar cells with a power conversion efficiency of 7.1 have been achieved. The process is monitored with laser light scattering in order to follow the incorporation of the Sn into the film. We observe the segregation of ZnSe at the Mo/CZTSe interface. Optical analysis has been carried out with photoluminescence and spectrophotometry. We observe strong band tailing and a bandgap, which is significantly lower than in other reported efficient CZTSe absorbers. The photoluminescence at room temperature is lower than the bandgap due to the existence of a large quantity of tail states. Finally, we present effects of low-temperature postannealing of the absorbers on ordering of the Cu/Zn atoms in CZTSe and solar cell parameters. We observe strong changes in all solar cell parameters upon annealing. The efficiency of the annealed devices is significantly reduced, although ordering is improved compared with ones made from nonannealed absorbers. [less ▲] Detailed reference viewed: 170 (1 UL)Epitaxial Cu2ZnSnSe4 thin films and devicesRedinger, Alex ; ; Sendler, Jan et alin THIN SOLID FILMS (2015), 582 Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different ... [more ▼] Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different secondary phases are present in the epitaxial layer. The main secondary phases are Cu2SnSe3 and ZnSe which grow epitaxially on top of the CZTSe. Transmission electron microscopy measurements show that the epitaxial CZTSe grows predominantly parallel to the c-direction. Epitaxial CZTSe solar cells with a maximum power conversion efficiency of 2.1\%, an open-circuit voltage of 223 mV and a current density of 16 mA/cm(2) are presented. (C) 2014 Elsevier B.V. All rights reserved. [less ▲] Detailed reference viewed: 134 (3 UL)The band gap of Cu2ZnSnSe4: Effect of order-disorderRey, Germain ; Redinger, Alex ; Sendler, Jan et alin Applied Physics Letters (2014), 105 Detailed reference viewed: 266 (21 UL)CuInSe2 semiconductor formation by laser annealingMeadows, Helen ; Regesch, David ; Thevenin, Maxime et alin Thin Solid Films (2014) Detailed reference viewed: 154 (2 UL)Different Bandgaps in Cu2ZnSnSe4 : a high temperature coevaporation studyRedinger, Alex ; Sendler, Jan ; Djemour, Rabie et alin IEEE Journal of Photovoltaics (2014) Detailed reference viewed: 225 (8 UL)Epitaxial Cu2ZnSnSe4 thin films and devicesRedinger, Alex ; ; Sendler, Jan et alin Thin Solid Films (2014) Detailed reference viewed: 198 (8 UL)Controlled bandgap CuIn1 − xGax(S0.1Se0.9)2 (0.10 ≤ x ≤ 0.72) solar cellsMalaquias, Joao Corujo Branco ; Berg, Dominik ; Sendler, Jan et alin Thin Solid Films (2014) Detailed reference viewed: 103 (7 UL)Molecular beam epitaxy of Cu2ZnSnSe4 thin films grown on GaAs(001)Redinger, Alex ; Djemour, Rabie ; Weiss, Thomas et alScientific Conference (2013, June) Detailed reference viewed: 194 (5 UL)Cu-Rich Precursors Improve Kesterite Solar CellsMousel, Marina ; ; Djemour, Rabie et alin Advanced Energy Materials (2013), 4 Detailed reference viewed: 365 (18 UL) |
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