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See detailPhosphorus Redistribution During the Formation of Buried CoSi2 Layers by Ion Beam Synthesis,
Schüppen, A.; Jebasinski, R.; Mantl, S. et al

in Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms (1994), 84

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See detailOvergrown PBT's: Calculations and Measurements
Schüppen, A.; Marso, Michel UL; Lüth, H.

in IEEE Transactions on Electron Devices (1994), 41(1994), 751-760

The device parameters of overgrown silicon permeable base transistors (PBT’s) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some ... [more ▼]

The device parameters of overgrown silicon permeable base transistors (PBT’s) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some design rules arise for optimizing the high frequency performance of PBT’s. The calculations indicate the source-drain distance as the essential PBT parameter, which should be kept below 200 nm in order to expect unity current- gain frequencies fT over 50 GHz. In addition, PBT’s with buried monocrystalline CoSiz -gates have been fabricated by high dose cobalt ion implantation through a grid-like mask into MOS-compatible n -type Si(lO0). Measurements revealed a transconductance of 70 mS/mm and a fT value of 6 GHz. The comparison between measured and simulated output characteristics shows good agreement. [less ▲]

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See detailSubmicrometer Silicon Permeable Base Transistors with Buried CoSi2 Gates
Schüppen, A.; Vescan, L.; Marso, Michel UL et al

in Electronics Letters (1993), 29(1993), 215-217

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