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See detailChemistry and Dynamics of Ge in Kesterite : Toward Band-Gap- Graded Absorbers
Marques, José; Stange, Helena; Hages, Charles J. et al

in Chemistry of Materials (2017), 29

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See detailOptical methodology for process monitoring of chalcopyrite photovoltaic technologies: Application to low cost Cu(In,Ga)(S,Se)2 electrodeposition based processes
Oliva, Florian; Kretzschmar, Steffen; Colombara, Diego UL et al

in Solar Energy Materials & Solar Cells (2016)

Non-destructive characterization of both single layers and completed devices are important issues for the development of efficient and low cost Cu(In,Ga)(S,Se)2 (CIGS) modules at high yields. This implies ... [more ▼]

Non-destructive characterization of both single layers and completed devices are important issues for the development of efficient and low cost Cu(In,Ga)(S,Se)2 (CIGS) modules at high yields. This implies for the need of methodologies suitable for the assessment of optical, electrical, and physico-chemical parameters that are relevant for the final device efficiency and that can be used for quality control and process monitoring at different process steps. In these applications, detection of in-homogeneities in the different layers from large area modules is especially relevant, being the presence of these inhomogeneities responsible for the existing gap between the efficiencies achieved in these technologies at cell and module levels. In this context, this work reviews the different optical methodologies that have been developed in the framework of the SCALENANO European project for the advanced assessment of the different layers in high efficiency electrodeposited – based CIGS devices. This has includes different strategies as those based on Raman scattering, Photoluminescence/Electroluminescence (PL/EL) based techniques and new photoelectrochemical based tools and firstly Raman spectroscopy is very sensitive to both composition and crystal quality parameters that are determining for device efficiency. Use of resonant Raman excitation strategies allows achieving a high sensitivity of the Raman spectra to the analysed features in the different regions of the device. This involves selection of the suitable excitation wavelength (in the broad spectral region from UV to IR) for the resonant Raman excitation of the required layer in the device. The strong increase in the intensity of the Raman peaks related to the use of resonant excitation conditions allows also decreasing the measuring time to times compatible with the implementation of these techniques at online process monitoring level. Analysed parameters include the electrical conductivity of the Al-doped ZnO window layer, the thickness of the CdS buffer layer and the chemical composition (S/(S+Se) relative content) and presence of relevant secondary phases as Cu-poor ordered vacancy compounds in the surface region of the absorbers. In addition PL/EL imaging are powerful techniques that provide direct access to the optoelectronic properties of the materials and devices. Whereas EL is performed using complete devices by injecting current in analogy to the operation of a light emitting diode, PL allows the characterization of bare absorber materials without the need for any functional or contacting layers. Moreover, semiconductor photo-electrochemistry (PEC) is a versatile technique that enables many opto-electronic properties of semiconductors to be determined. Essentially, a semiconductor on a conducting substrate placed in a solution containing redox species forms a Schottky barrier junction. The formation of such a diode enables basic semiconductor properties to be measured such as doping type, doping density, band gap and the flat band position versus the vacuum energy scale. In all these cases, quality control indicators suitable for the advanced assessment of these processes have been identified and validated for the electrodeposition-based processes developed at Nexcis Company. [less ▲]

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See detailFabrication and characterization of kesterite Cu2ZnSnS4 thin films deposited by electrostatic spray assisted vapour deposition method
Liu, J. P.; Choy, Kwang-Leong; Placidi, M. et al

in Physica Status Solidi A. Applications and Materials Science (2014)

Most of the high efficiency kesterite solar cells are fabricated by vacuum or hydrazine-based solution methods which have drawbacks, such as high cost, high toxicity or explosivity. In our contribution ... [more ▼]

Most of the high efficiency kesterite solar cells are fabricated by vacuum or hydrazine-based solution methods which have drawbacks, such as high cost, high toxicity or explosivity. In our contribution, an alternative non-vacuum and environmental friendly deposition technology called electrostatic spray assisted vapour deposition (ESAVD) has been used for the cost-effective growth of Cu2ZnSnS4 (CZTS) thin films with well controlled structure and composition. CZTS films have been characterized using a combination of XRD, XPS, SEM-EDX, AFM, and Raman spectroscopy. The results demonstrated that adherent, uniform and homogeneous CZTS films without apparent secondary phases have been produced by ESAVD. The atomic ratios measured by EDX are Cu/(Zn + Sn) = 0.88 and Zn/Sn = 1.17,which are very close with the reported high efficiency solar cells and can be finely tuned by formulating the precursor.CZTS films exhibited a typical optical band gap of 1.53 eV from UV–Vis analysis. Cu2ZnSnS4 produced by the ESAVD are being optimized towards the fabrication of high efficiency photovoltaic devices. [less ▲]

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See detailDetection of a ZnSe secondary phase in coevaporated Cu2ZnSnSe4 thin films
Redinger, Alex UL; Hönes, Katja UL; Fontané, Xavier et al

in Applied Physics Letters (2011), 98(101907), 1019071-1019073

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