References of "Rizzi, A"
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See detailInhomogeneous electron distribution in InN nanowires: Influence on the optical properties
Molina-Sanchez, Alejandro UL; Segura-Ruiz, J.; Garro, N. et al

in physica status solidi (c) (2012), 9(3-4), 1001--1004

In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and ... [more ▼]

In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and photoluminescence excitation spectra have been measured for a set of self-assembled InN NWs grown under different conditions. The photoluminescence excitation experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN nanowires. With the self-consistent model we can explore how the optical absorption depends on nanowires radius and doping concentration. Our model solves the Schrödinger equation for a cylindrical nanowire of infinite length, assuming a parabolic conduction band. The columnar geometry introduces effects in both the electron density and in the self-consistent conduction band profile, with no equivalence in planar layer. On the other hand, the differences in the photoluminescence excitation spectra are related to the inhomogeneous electron distribution inside the nanowires, caused by a bulk donor concentration and a two-dimensional density of ionized surface states. For nanowire radii larger than 30 nm, such concentrations modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [less ▲]

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See detailInhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments
Segura-Ruiz, J.; Molina-Sanchez, Alejandro UL; Garro, N. et al

in Physical Review. B, Condensed Matter and Materials Physics (2010), 82

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See detailUltrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN
Mikulics, M.; Marso, Michel UL; Javorka, P. et al

in Applied Physics Letters (2005), 86(21), 211110

We have fabricated and characterized ultrafast metal-semiconductor-metal photodetectors based on low-temperature-grown sLTd GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields ... [more ▼]

We have fabricated and characterized ultrafast metal-semiconductor-metal photodetectors based on low-temperature-grown sLTd GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4-ps-wide electrical transients using 360-nm-wavelength and 100-fs-duration laser pulses, that is corresponding to the carrier lifetime of 720 fs in our LT GaN material. [less ▲]

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