References of "Richter, T"
     in
Bookmark and Share    
Full Text
Peer Reviewed
See detailGaN-nanowhiskers: MBE-growth conditions and optical properties
Meijers, R.; Richter, T.; Calarco, R. et al

in Journal of Crystal Growth (2006), 289(1), 381-386

Morphology and optical properties of GaN nanowhiskers grown by molecular beam epitaxy(MBE) have been studied in correlation with growth parameters. It was shown that the growth parameters can be tuned ... [more ▼]

Morphology and optical properties of GaN nanowhiskers grown by molecular beam epitaxy(MBE) have been studied in correlation with growth parameters. It was shown that the growth parameters can be tuned such that uniform, well separated and high-quality nanowhiskers are obtained. Using an optimized ramp of Ga beam equivalent pressure (BEP) during the growth, the tapering or coalescence of nanowhiskers can be suppressed. By increasing the growth temperature the density of nanowhiskers is reduced, but the crystalline quality is improved as can be concluded from cathodoluminescence (CL) results. [less ▲]

Detailed reference viewed: 76 (0 UL)
Full Text
See detailGaN Nanocolumns on Si(111) Grown b Molecular Beam Epitaxy
Calarco, Raffaella; Marso, Michel UL; Meijers, R. et al

in Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (2004)

GaN nanocolumns are reproducibly grown by plasma-assisted molecular beam epitaxy on Si(111). The nanocolumn density and diameter, 20–150 nm, are controlled by means of the III/V ratio. The nanocolumns ... [more ▼]

GaN nanocolumns are reproducibly grown by plasma-assisted molecular beam epitaxy on Si(111). The nanocolumn density and diameter, 20–150 nm, are controlled by means of the III/V ratio. The nanocolumns grow parallel to the [111] direction of the Si substrate. The columns have been transferred to a Si(100) substrate covered with a layer of 300nm SiO2; single nanowire devices have been fabricated using finger shaped electrical contacts (Ti/Au) obtained by e-beam patterning technique. The electrical transport properties of the resulting metal–semiconductor–metal nanostructures are analyzed by means of current– voltage measurements with and without UV-illumination. [less ▲]

Detailed reference viewed: 23 (0 UL)
Peer Reviewed
See detailGenome-wide, large-scale production of mutant mice by ENU mutagenesis.
Hrabe de Angelis, M. H.; Flaswinkel, H.; Fuchs, H. et al

in Nature Genetics (2000), 25(4), 444-7

In the post-genome era, the mouse will have a major role as a model system for functional genome analysis. This requires a large number of mutants similar to the collections available from other model ... [more ▼]

In the post-genome era, the mouse will have a major role as a model system for functional genome analysis. This requires a large number of mutants similar to the collections available from other model organisms such as Drosophila melanogaster and Caenorhabditis elegans. Here we report on a systematic, genome-wide, mutagenesis screen in mice. As part of the German Human Genome Project, we have undertaken a large-scale ENU-mutagenesis screen for dominant mutations and a limited screen for recessive mutations. In screening over 14,000 mice for a large number of clinically relevant parameters, we recovered 182 mouse mutants for a variety of phenotypes. In addition, 247 variant mouse mutants are currently in genetic confirmation testing and will result in additional new mutant lines. This mutagenesis screen, along with the screen described in the accompanying paper, leads to a significant increase in the number of mouse models available to the scientific community. Our mutant lines are freely accessible to non-commercial users (for information, see http://www.gsf.de/ieg/groups/enu-mouse.html). [less ▲]

Detailed reference viewed: 92 (4 UL)
Peer Reviewed
See detailIsolation of the Pax9 cDNA from adult human esophagus.
Peters, H.; Schuster, G.; Neubuser, A. et al

in Mammalian Genome : Official Journal of the International Mammalian Genome Society (1997), 8(1), 62-4

Detailed reference viewed: 131 (0 UL)