References of "Raabe, Dierk"
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See detailChemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface
Colombara, Diego UL; Elanzeery, Hossam UL; Nicoara, Nicoleta et al

in Nature Communications (2020)

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See detailQuasi-Fermi-Level Splitting of Cu-Poor and Cu-Rich CuInS2 Absorber Layers
Lomuscio, Alberto UL; Rödel, Tobias UL; Schwarz, Torsten et al

in Physical Review Applied (2019), 11

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See detailVariable chemical decoration of extended defects in Cu-poor Cu2ZnSnSe4 thin films
Schwarz, Torsten; Redinger, Alex UL; Siebentritt, Susanne UL et al

in Physical Review Materials (2019), 3

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See detailSodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers
Colombara, Diego UL; Werner, Florian UL; Schwarz, Torsten et al

in Nature Communications (2018)

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See detailFormation of nanometer-sized Cu-Sn-Se particles in Cu2ZnSnSe4 thin-films and their effect on solar cell efficiency
Schwarz, Torsten; Cojocaru-Miredin, Oana; Mousel, Marina et al

in ACTA MATERIALIA (2017), 132

Atom probe tomography and transmission electron microscopy are used to study the formation of nano sized Cu-Sn-Se particles in Cu2ZnSnSe4 thin -films. For a Cu -rich precursor, which was deposited at 320 ... [more ▼]

Atom probe tomography and transmission electron microscopy are used to study the formation of nano sized Cu-Sn-Se particles in Cu2ZnSnSe4 thin -films. For a Cu -rich precursor, which was deposited at 320 degrees C under Cu- and Zn-rich growth conditions, Cu2-xSe grains at the surface are detected. During annealing the precursor at 500 degrees C in a SnSe + Se atmosphere most of the Cu2-xSe is transformed to Cu2ZnSnSe4 via the consumption of excessive ZnSe and incorporation of Sn. However, atom probe tomography studies also reveal the formation of various nanometer-sized Cu-Sn-Se particles close to the CdS/Cu(2)ZnSnSe4 interface. One of those particles has a composition close to the Cu2SnSe3 compound. This phase has a smaller band gap than Cu2ZnSnSe4 and is proposed to lead to a significant drop in the open -circuit voltage and could be the main cause for a detrimental p-n junction and the zero efficiency of the final device. Possible effects of the other phases on solar cell performance and formation mechanisms are discussed as well. (C)2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. [less ▲]

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See detailDetection of Cu2Zn5SnSe8 and Cu2Zn6SnSe9 phases in co-evaporated Cu2ZnSnSe4 thin-films
Schwarz, Torsten; Marques, Miguel A.L.; Botti, Silvana et al

in Applied Physics Letters (2015), 107

Detailed reference viewed: 174 (3 UL)