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See detailBuilding the social graph of the history of European integration: A pipeline for humanist-machine interaction in the digital humanities
Wieneke, Lars UL; Düring, M.; Silaume, G. et al

in Lecture Notes in Computer Science (2014), 8359 LNCS

The breadth and scale of multimedia archives provides a tremendous potential for historical research that hasn't been fully tapped up to know. In this paper we want to discuss the approach taken by the ... [more ▼]

The breadth and scale of multimedia archives provides a tremendous potential for historical research that hasn't been fully tapped up to know. In this paper we want to discuss the approach taken by the History of Europe application, a demonstrator for the integration of human and machine computation that combines the power of face recognition technology with two distinctively different crowd-sourcing approaches to compute co-occurrences of persons in historical image sets. These co-occurrences are turned into a social graph that connects persons with each other and positions them, through information about the date and location of recording, in time and space. The resulting visualization of the graph as well as analytical tools can help historians to find new impulses for research and to un-earth previously unknown relationships. As such the integration of human expertise and machine computation enables a new class of applications for the exploration of multimedia archives with significant potential for the digital humanities. © 2014 Springer-Verlag. [less ▲]

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See detailCharacterization of AlGaN/GaN MOSHFETs with Al2O3 as Gate Oxide,
Gregušová, D.; Stoklas, R.; Čičo, K. et al

in Physica Status Solidi C. Current Topics in Solid State Physics (2007), 4 (2007)

We report on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with MOCVD deposited Al2O3 as a gate oxide. Properties of MOSHFETs with 9 nm and 14 nm thick Al2O3 are ... [more ▼]

We report on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with MOCVD deposited Al2O3 as a gate oxide. Properties of MOSHFETs with 9 nm and 14 nm thick Al2O3 are compared with conventional HFETs prepared simultaneously on the same layer structure. Lower gate leakage current (~10−5 A/mm at −10 V) and higher saturated drain current (up to 40%) are obtained for MOSHFETs than those for HFETs. In contradiction to previously reported data, the extrinsic transconductance for MOSHFETs is also higher (up to 37% of peak values) than that for HFET. This indicates on semi-conductive rather than insulating properties of Al2O3 gate oxide. Pulsed I−V measurements (pulse width 1 μs) yielded lower but still measurable current collapse in MOSHFETs compared to HFETs. Nevertheless, obtained results show that Al2O3 gate oxide, after optimising its microstructure and thickness, can be preferable for the preparation of AlGaN/GaN MOSHFETs. [less ▲]

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See detailInfluence of passivation-induced stress on the performance of AlGaN/GaN HEMTs
Gregusova, Dagmar; Bernát, J.; Drzik, M. et al

in Physica Status Solidi C. Current Topics in Solid State Physics (2005), 2(7), 2619-2622

This paper reports on properties of intentionally undoped AlGaN/GaN/sapphire-based high electron mobility transistors (HEMTs) before and after passivation with SiO2 and Si3N4. Our results indicate that ... [more ▼]

This paper reports on properties of intentionally undoped AlGaN/GaN/sapphire-based high electron mobility transistors (HEMTs) before and after passivation with SiO2 and Si3N4. Our results indicate that the DC performance of the AlGaN/GaN HEMTs improved significantly as the stress in the passivation layer increased from compressive to tensile. It corresponded to changes in the sheet carrier concentration. Unlike the DC properties, RF properties of the HEMTs were less sensitive to the stress. [less ▲]

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See detailInP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits
Horstmann, M.; Marso, Michel UL; Schimpf, K. et al

Book published by Kluver Academic Publishers (1996)

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