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See detailHigh Bandwidth InP/InGaAs Based MSM-2DEG Diodes For Optoelectronic Application,
Marso, Michel UL; Horstmann, M.; Schimpf, K. et al

in Proceedings of the 9th International Conference on InP and Related Materials (1997)

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See detailInP-Based Monolithically Integrated Photoreceiver for 4-10Gbit/s Optoelectronic Systems
Horstmann, M.; Hardtdegen, H.; Schimpf, K. et al

in Proceedings of the Gallium Arsenide Application Symposium GAAS 96, Paris, France (1996)

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See detailFrequency Response of InP/InGaAs MSM Photodetector with Current Transport Along 2DEG
Horstmann, M.; Hollfelder, M.; Muttersbach, J. et al

in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996)

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See detailNovel MSM-2DEG PD/HEMT Photoreceiver for 10 Gbit/s Operation
Horstmann, M.; Muttersbach, J.; v.d.Hart, A. et al

in Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy (1996)

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See detailResponsivity Enhancement of InGaAs Based MSM Photodetectors Using 2DEG Layer Sequence and Semitransparent Electrodes
Horstmann, M.; Marso, Michel UL; Muttersbach, J. et al

in Electronics Letters (1996), 32

The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with ... [more ▼]

The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with 2um finger-spacing and finger-width exhibit a dark current density less than 10pA/um2, a breakdown voltage of 45V and a saturation capacitance of 30fF. A DC responsivity of 0.61A/W and a –3dB bandwidth of 8.5GHz were achieved. The electric potential distribution is modified by a 2DEG inserted in the layer structure leading, to improved bandwidth. [less ▲]

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