References of "Kočan, M"
     in
Bookmark and Share    
Full Text
Peer Reviewed
See detailMonolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System
Mikulics, M.; Kordoš, P.; Gregušová, D. et al

in IEEE Photonics Technology Letters (2011), 23(17), 1189-1191

We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors integrated with metal–semiconductor–field-effect-transistors (MESFETs) integrated in coplanar strip lines in ... [more ▼]

We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors integrated with metal–semiconductor–field-effect-transistors (MESFETs) integrated in coplanar strip lines in the GaN/AlN/SiC material system. We recorded electrical transients of the single photodetector as short as 0.9 ps wide by optoelectric pump–probe measurements using 360-nm-wavelength and 100-fs-duration laser pulses. Electric photoresponse transients of the photodetector with 6-mV peak amplitude were amplified by the MESFET, resulting in 4-ps-wide and 35-mV peak amplitude signals. This monolithically integrated optoelectronic circuit is presented as a potential candidate for high-speed ultraviolet optoelectronics [less ▲]

Detailed reference viewed: 103 (0 UL)
Full Text
Peer Reviewed
See detailUltrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN
Mikulics, M.; Marso, Michel UL; Javorka, P. et al

in Applied Physics Letters (2005), 86(21), 211110

We have fabricated and characterized ultrafast metal-semiconductor-metal photodetectors based on low-temperature-grown sLTd GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields ... [more ▼]

We have fabricated and characterized ultrafast metal-semiconductor-metal photodetectors based on low-temperature-grown sLTd GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4-ps-wide electrical transients using 360-nm-wavelength and 100-fs-duration laser pulses, that is corresponding to the carrier lifetime of 720 fs in our LT GaN material. [less ▲]

Detailed reference viewed: 50 (0 UL)
See detailMaterial and Device Issues of GaN-based HEMTs
Kordoš, P.; Alam, A.; Betko, J. et al

in Proceedings of the 8th International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO), (2000)

Detailed reference viewed: 53 (0 UL)