![]() Marso, Michel ![]() in Solid-State Electronics (1998), 42(1998), 197-200 Detailed reference viewed: 25 (0 UL)![]() Marso, Michel ![]() in Proceedings of the 9th International Conference on InP and Related Materials (1997) Detailed reference viewed: 79 (0 UL)![]() ; Marso, Michel ![]() Book published by Gordon and Brerach Science Publishers (1997) Detailed reference viewed: 53 (0 UL)![]() Marso, Michel ![]() in Solid-State Electronics (1997), 41(1997), 25-31 Detailed reference viewed: 42 (0 UL)![]() ; Marso, Michel ![]() in Proceedings of the 9th International Conference on InP and Related Materials, Hyannis, Massachusetts, USA (1997) Detailed reference viewed: 79 (0 UL)![]() ; ; et al in IEEE Electron Device Letters (1997), 18 We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and ... [more ▼] We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and channel composition on the performance of these devices is investigated.We demonstrate that optimum dc and RF performance using highly strained channels can be obtained only if additional composite channels are grown. The cutoff frequencies fT =160 GHz and fmax=260 GHz for a 0.1- um T-gate device indicate the suitability of our devices for W-Band applications. [less ▲] Detailed reference viewed: 1413 (45 UL)![]() ; ; et al in Electronics Letters (1996), 32(1996), 2132-2133 A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness ... [more ▼] A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained. [less ▲] Detailed reference viewed: 124 (0 UL)![]() ; ; et al in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996) Detailed reference viewed: 83 (2 UL)![]() ; ; et al in Proceedings of the Gallium Arsenide Application Symposium GAAS 96, Paris, France (1996) Detailed reference viewed: 39 (0 UL)![]() ; ; et al in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996) Detailed reference viewed: 87 (0 UL)![]() ; ; Marso, Michel ![]() in Proceedings of the International Conference on Telecommunications Istanbul, Turkye (1996) Detailed reference viewed: 27 (0 UL)![]() ; ; et al in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996) Detailed reference viewed: 1137 (7 UL)![]() ; ; et al in Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy (1996) Detailed reference viewed: 34 (0 UL)![]() ; Marso, Michel ![]() in Electronics Letters (1996), 32 The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with ... [more ▼] The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with 2um finger-spacing and finger-width exhibit a dark current density less than 10pA/um2, a breakdown voltage of 45V and a saturation capacitance of 30fF. A DC responsivity of 0.61A/W and a –3dB bandwidth of 8.5GHz were achieved. The electric potential distribution is modified by a 2DEG inserted in the layer structure leading, to improved bandwidth. [less ▲] Detailed reference viewed: 91 (0 UL)![]() ; Marso, Michel ![]() Book published by Kluver Academic Publishers (1996) Detailed reference viewed: 43 (0 UL)![]() ; ; et al in Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy, 1996 (1996) Detailed reference viewed: 1165 (1 UL)![]() ; ; Marso, Michel ![]() in Electronics Letters (1996), 32 Detailed reference viewed: 167 (0 UL)![]() ; Marso, Michel ![]() in Proceedings of the 25th European Solid State Devices Research Conference, Den Haag, The Netherlands (1995) Detailed reference viewed: 35 (0 UL)![]() ; Marso, Michel ![]() in Applied Physics Letters (1995), 67(1995), 106-108 We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high ... [more ▼] We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high electron mobility transistor structure. The photodetector is fabricated in the InP/InGaAs material system, without use of Al-containing layers. Optoelectronic measurements on a device with a finger spacing of 3 mm show a full width at half-maximum (FWHM) of the pulse response of <60 ps, which is the resolution limit of our measurement equipment. Low-temperature measurements at 40 K with electro-optical sampling at a wavelength of 890 nm show a FWHM of 1 ps. [less ▲] Detailed reference viewed: 56 (0 UL)![]() Marso, Michel ![]() in Proceedings of the 6th International Conference on InP and Related Compounds, Santa Barbara, California USA (1994) Detailed reference viewed: 81 (0 UL) |
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