References of "Hasdeo, Eddwi Hesky 50039073"
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See detailEffects of topological band structure on thermoelectric transport of bismuthene
Gaffar, Muhammad; Wella, Sasfan Arman; Hasdeo, Eddwi Hesky UL

in Physical Review. B (2021), 104(20), 205105

Two-dimensional bismuth (Bi) layer, known as bismuthene, exhibits Z2 topological bulk states due to large spin-orbit coupling that inverts the bands. Using the tight-binding method, we calculate the band ... [more ▼]

Two-dimensional bismuth (Bi) layer, known as bismuthene, exhibits Z2 topological bulk states due to large spin-orbit coupling that inverts the bands. Using the tight-binding method, we calculate the band structure of buckled bismuthene to understand its topological and trivial phases. We determine the thermoelectric properties for some considered phases, incorporating the edge states contribution, by using the linearized Boltzmann transport equation with a constant relaxation time approximation. It is shown that the thermoelectric figure of merit, ZT, actually drops in undoped topological bismuthene due to the edge effects. Surprisingly, the topological edge states enhance ZT at large doping with the Fermi energy near the bottom of bulk bands when bismuthene is nearly metallic. [less ▲]

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See detailKerr effect in tilted nodal loop semimetals
Ekström, Carl Johan Ingvar UL; Hasdeo, Eddwi Hesky UL; Farias, Maria Belen UL et al

in Physical Review. B (2021), 104(12), 125411

We investigate the optical activity of tilted nodal loop semimetals. We calculate the full conductivity matrix for a band structure containing a nodal loop with possible tilt in the x−y plane, which ... [more ▼]

We investigate the optical activity of tilted nodal loop semimetals. We calculate the full conductivity matrix for a band structure containing a nodal loop with possible tilt in the x−y plane, which allows us to study the Kerr rotation and ellipticity both for a thin film and a bulk material. We find signatures in the Kerr signal that give direct information about the tilt velocity and direction, the radius of the nodal loop and the internal chemical potential of the system. These findings should serve as guide to understanding optical measurements of nodal loop semimetals and as an additional tool to characterize them. [less ▲]

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See detailThe Quest and Hope of Majorana Zero Modes in Topological Superconductor for Fault Tolerant Quantum Computing: An Introductory Overview
Ayukaryana, Nur R.; Fauzi, Mohammad H; Hasdeo, Eddwi Hesky UL

in AIP Conference Proceedings (2021, August 10), 2382(1), 020007

Ettore Majorana, in his short life, unintendedly has uncovered the most profound problem in quantum computation by his discovery of Majorana fermion, a particle which is its own anti-particle. Owing to ... [more ▼]

Ettore Majorana, in his short life, unintendedly has uncovered the most profound problem in quantum computation by his discovery of Majorana fermion, a particle which is its own anti-particle. Owing to its non-Abelian exchange statistics, Majorana fermions may act as a qubit for a universal quantum computer which is fault-tolerant. The existence of such particle is predicted in mid-gap states (zero modes) of a topological superconductor as bound states that have a highly entangled degenerate ground state. This introductory overview will focus on the simplest theoretical proposals of Majorana fermions for topological quantum computing in superconducting systems, emphasizing the quest from the scalability problem of quantum computer to its possible solution with topological quantum computer employing non-Abelian anyons on various platforms of certain Majorana fermion signature encountered. [less ▲]

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See detailA Comparative Study of Thermoelectric Properties of Monolayer, Bilayer and Bulk CrI3
Suprayoga, E; Hanna, M. Y.; Hasdeo, Eddwi Hesky UL et al

in AIP Conference Proceedings (2021), 2382(1), 020004

We comparatively study the electronic and thermoelectric properties of the monolayer, bilayer, and bulk CrI3 by density functional theory (DFT). We show that, according to the DFT calculation, those ... [more ▼]

We comparatively study the electronic and thermoelectric properties of the monolayer, bilayer, and bulk CrI3 by density functional theory (DFT). We show that, according to the DFT calculation, those materials are magnetic semiconductors with ferromagnetic (FM) in monolayer, antiferromagnetic (AFM) in the bilayer, back to FM in the bulk structure. The thermoelectric properties of those materials are evaluated by using the Boltzmann transport equation (BTE) with a constant relaxation time approximation (RTA). At room temperature, we obtain bulk CrI3 has more significant electrical conductivity than monolayer and bilayer CrI3, while the Seebeck coefficient is similar that implied the bulk CrI3 has a better thermoelectric performance. In those systems, the optimum power factor is obtained by shifting the chemical potential of CrI3 by 1 eV with p-type doping. [less ▲]

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See detailInvestigation of electron and phonon transport in Bi-doped CaMnO3 for thermoelectric applications
Suprayoga, E; Putri, WBK; Singsoog, K et al

in Materials Research Bulletin (2021), 141

The electron and phonon transports in CaMnO3 and in one of its Bi-doped counterparts, namely, Bi0.03Ca0.97MnO3, are investigated using the thermoelectric transport measurements and first-principles ... [more ▼]

The electron and phonon transports in CaMnO3 and in one of its Bi-doped counterparts, namely, Bi0.03Ca0.97MnO3, are investigated using the thermoelectric transport measurements and first-principles calculations. We find that antiferromagnetic insulator CaMnO3 breaks the Wiedemann–Franz law with the Lorenz number reaching four times that of ordinary metals at room temperature. Bismuth doping reduces both the electrical resistivity and Seebeck coefficient of CaMnO3; thus, it recovers the Wiedemann–Franz law behavior. In addition, Bi0.03Ca0.97MnO3 possesses a shorter phonon lifetime according to the transport measurements. As a result, Bi0.03Ca0.97MnO3 exhibits superior thermoelectric properties over pristine CaMnO3 owing to the lower thermal conductivity and electrical resistivity. [less ▲]

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See detailNon-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors
Octavian, Kevin; Hasdeo, Eddwi Hesky UL

in Advances in Natural Sciences: Nanoscience and Nanotechnology (2021), 12

We performed the first-principles calculation on common thermoelectric semiconductors Bi2Te3, Bi2Se3, SiGe, and PbTe in bulk three-dimension (3D) and two-dimension (2D). We found that miniaturization of ... [more ▼]

We performed the first-principles calculation on common thermoelectric semiconductors Bi2Te3, Bi2Se3, SiGe, and PbTe in bulk three-dimension (3D) and two-dimension (2D). We found that miniaturization of materials does not generally increase the thermoelectric figure of merit (ZT) according to the Hicks and Dresselhaus (HD) theory. For example, ZT values of 2D PbTe (0.32) and 2D SiGe (0.04) are smaller than their 3D counterparts (0.49 and 0.09, respectively). Meanwhile, the ZT values of 2D Bi2Te3 (0.57) and 2D Bi2Se3 (0.43) are larger than the bulks (0.54 and 0.18, respectively), which agree with HD theory. The HD theory breakdown occurs because the band gap and band flatness of the materials change upon dimensional reduction. We found that flat bands give a larger electrical conductivity (σ) and electronic thermal conductivity (κel) in 3D materials, and smaller values in 2D materials. In all cases, maximum ZT values increase proportionally with the band gap and saturate for the band gap above 10 kBT. The 2D Bi2Te3 and Bi2Se3 obtain a higher ZT due to the flat corrugated bands and narrow peaks in their DOS. Meanwhile, the 2D PbTe violates HD theory due to the flatter bands it exhibits, while 2D SiGe possesses a small gap Dirac-cone band. [less ▲]

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See detailElectron hydrodynamics of anomalous Hall materials
Hasdeo, Eddwi Hesky UL; Ekström, Carl Johan Ingvar UL; Idrisov, Edvin UL et al

in Physical Review. B (2021), 103(12), 125106

We study two-dimensional electron systems in the hydrodynamic regime. We show that a geometrical Berry curvature modifies the effective Navier-Stokes equation for viscous electron flow in topological ... [more ▼]

We study two-dimensional electron systems in the hydrodynamic regime. We show that a geometrical Berry curvature modifies the effective Navier-Stokes equation for viscous electron flow in topological materials. For small electric fields, the Hall current becomes negligible compared to the viscous longitudinal current. In this regime, we highlight an unconventional Poiseuille flow with an asymmetric profile and a deviation of the maximum of the current from the center of the system. In a two-dimensional infinite geometry, the Berry curvature leads to current whirlpools and an asymmetry of potential profile. This phenomenon can be probed by measuring the asymmetric non-local resistance profile. [less ▲]

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See detailStrain effects on band structure and Dirac nodal-line morphology of ZrSiSe
Bernardus, Rendy; Hasdeo, Eddwi Hesky UL

in Journal of Applied Physics (2021), 129(1), 014306

The Dirac nodal-line semimetals are new promising materials for technological applications due to their exotic properties, which originate from band structure dispersion and nodal-line behavior. We report ... [more ▼]

The Dirac nodal-line semimetals are new promising materials for technological applications due to their exotic properties, which originate from band structure dispersion and nodal-line behavior. We report strain effects on the band structure of ZrSiSe Dirac nodal-line semimetal through the density functional theory calculations. We found that the kz=0 Dirac nodal-line of ZrSiSe is robust to all strains under reasonable magnitude although there are significant changes in the band oscillation amplitude, bandgap, and band occupancy due to orbital interactions and the Fermi energy shift upon strains. We also found that the effective strains to tune the nodal-line and band structure are equi-biaxial tensile, uniaxial (100) tensile, and xz-plane shear strains. [less ▲]

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See detailOptical properties of topological flat and dispersive bands
Habibi, Alireza UL; Musthofa, Ahmad Z.; Adibi, Elaheh et al

E-print/Working paper (2021)

We study the optical properties of topological flat and dispersive bands. Due to their topological nature, there exists an anomalous Hall response which gives rise to a transverse current without applied ... [more ▼]

We study the optical properties of topological flat and dispersive bands. Due to their topological nature, there exists an anomalous Hall response which gives rise to a transverse current without applied magnetic field. The dynamical Hall conductivity of systems with flat bands exhibits a sign change when the excitation energy is on resonance with the band gap, similar to the magnetotransport Hall conductivity profile. The sign change of the Hall conductivity is located at the frequency corresponding to the singularity of the joint density of states, i.e., the van Hove singularity (VHS). For perfectly flat bands, this VHS energy matches the band gap. On the other hand, in the case of dispersive bands, the VHS energy is located above the band gap. As a result, the two features of the Hall conductivity, i.e., the resonant feature at the band gap and the sign change at the VHS energy, become separated. This anomalous Hall response rotates the polarization of an electric field and can be detected in the reflected and transmitted waves, as Kerr and Faraday rotations, respectively, thus allowing a simple optical characterization of topological flat bands. [less ▲]

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See detailFormation of ultra-thin Ge1−xSnx/Ge1−x−ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode
Suwito, Galih Ramadana; Fukuda, Masahiro; Suprayoga, Edi et al

in Applied Physics Letters (2020), 117(23), 232104

Huge thermal noise owing to the narrow energy bandgap is one of the critical issues for group IV-based photonics in the mid-infrared regime. With this motivation, we examined to form Ge1−xSnx ... [more ▼]

Huge thermal noise owing to the narrow energy bandgap is one of the critical issues for group IV-based photonics in the mid-infrared regime. With this motivation, we examined to form Ge1−xSnx/Ge1−x−ySixSny quantum heterostructures (QHs) by molecular beam epitaxy for realizing resonant tunneling diodes composed of group-IV materials. We confirmed the formation of approximately 2 nm-thick Ge1−xSnx/Ge1−x−ySixSny QHs with atomically flat interfaces by x-ray diffraction and transmission electron microscopy methods. Moreover, by the current density–voltage (J–V) measurement at 10 K, we observed the occurrence of a non-linear distinct hump in the J–V characteristic, which is possibly originated from quantum transport of heavy holes. According to the tunneling transmission spectra simulation result, the hump property would be due to two possible scenarios: a resonant tunneling of heavy holes in the QH and/or a resonance phenomenon that heavy holes pass just above a potential barrier. [less ▲]

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See detailAb-initio calculation of muon spin polarization function to study lithium-ion diffusion in LiTi2O4 battery material
Suprayoga, E.; Rifai, A.; Subhan, A. et al

in AIP Conference Proceedings (2020), 2256(1), 030015

We report the study of lithium-ion diffusion in LiTi2O4 battery material by the analysis of muon spin polarization function at the muon site by DFT calculation. The important parameters which explain the ... [more ▼]

We report the study of lithium-ion diffusion in LiTi2O4 battery material by the analysis of muon spin polarization function at the muon site by DFT calculation. The important parameters which explain the lithium-ion diffusion will be derived from the function, including the field fluctuation rate and the local field distribution. The calculated results are shown in good agreement with the previously measured field distribution and the field fluctuation rate in LiTi2O4 at the ground state temperature. This method, therefore, may apply to the study of other battery materials. [less ▲]

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See detailThermoelectric properties of two-dimensional Dirac materials
Hasdeo, Eddwi Hesky UL; Krisna, L. P. A.; Nugraha, A. R. T.

in AIP Conference Proceedings (2020), 2256(1), 030010

We performed Boltzmann transport calculation to obtain the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, and thermoelectric figure of merit (ZT) for Dirac systems. We ... [more ▼]

We performed Boltzmann transport calculation to obtain the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, and thermoelectric figure of merit (ZT) for Dirac systems. We found an enhancement of ZT due to the gap opening. When the phonon thermal conductivity is small enough, the optimum ZT in gapped Dirac system can be larger than 1, which is preferable for thermoelectric applications. [less ▲]

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See detailThermoelectric properties of two-dimensional hydrogenated borophene: A first-principles study
Hanna, M.Y.; Hasdeo, Eddwi Hesky UL; Suprayoga, E. et al

in AIP Conference Proceedings (2020), 2256(1), 030017

We theoretically study electronic and thermoelectric properties of two-dimensional hydrogenated borophene (”boro-phane”). We show that, according to the first-principles calculation, hydrogenated ... [more ▼]

We theoretically study electronic and thermoelectric properties of two-dimensional hydrogenated borophene (”boro-phane”). We show that, according to the first-principles calculation, hydrogenated borophene is semimetallic, with two bands meeting at a single point at the Fermi level. The thermoelectric properties evaluated by using the Boltzmann equation with a constant relaxation time approximation (CRTA). At room temperature, we obtain large power factor for electron doping regime. Therefore, appropriate doping to this material can enhance its thermoelectric efficiency. [less ▲]

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See detailThermoelectric properties of Mexican-hat band structures
Nurhuda, M; Nugraha, ART; Hanna, MY et al

in Advances in Natural Sciences: Nanoscience and Nanotechnology (2020), 11(1), 015012

Materials with Mexican-hat electronic energy dispersions emerging from heterostructures, substrate effects, or spin–orbit couplings are believed to exhibit excellent thermoelectric properties due to its ... [more ▼]

Materials with Mexican-hat electronic energy dispersions emerging from heterostructures, substrate effects, or spin–orbit couplings are believed to exhibit excellent thermoelectric properties due to its van Hove singularity of density of states in two-dimension. However, within a constant relaxation time approximation, we disprove this belief and we find that the singularity effect is cancelled down by the group velocity contribution in the thermoelectric transport distribution. Nevertheless, the band parameters can still be optimised to reach thermoelectric figure of merit larger than 2 in a wide bandwidth, thus keeping the potential of materials with Mexican-hat bands for thermoelectric applications. [less ▲]

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See detailThermoelectric properties of Mexican-hat band structures
Nurhuda, M; Nugraha, ART; Hanna, MY et al

in Advances in Natural Sciences: Nanoscience and Nanotechnology (2020), 11(1), 015012

Materials with Mexican-hat electronic energy dispersions emerging from heterostructures, substrate effects, or spin–orbit couplings are believed to exhibit excellent thermoelectric properties due to its ... [more ▼]

Materials with Mexican-hat electronic energy dispersions emerging from heterostructures, substrate effects, or spin–orbit couplings are believed to exhibit excellent thermoelectric properties due to its van Hove singularity of density of states in two-dimension. However, within a constant relaxation time approximation, we disprove this belief and we find that the singularity effect is cancelled down by the group velocity contribution in the thermoelectric transport distribution. Nevertheless, the band parameters can still be optimised to reach thermoelectric figure of merit larger than 2 in a wide bandwidth, thus keeping the potential of materials with Mexican-hat bands for thermoelectric applications. [less ▲]

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See detailModulation of coherent phonon amplitudes in low-dimensional materials by ultrafast laser pulse trains
Nugraha, Ahmad R.; Hanna, Muhammad Y.; Suprayoga, Edi et al

in AIP Conference Proceedings (2020), 2256(1), 020005

We theoretically investigate how coherent phonon amplitudes in low dimensional materials can be modulated by ultrafast laser pulse trains. Important laser parameters for the modulation of coherent phonon ... [more ▼]

We theoretically investigate how coherent phonon amplitudes in low dimensional materials can be modulated by ultrafast laser pulse trains. Important laser parameters for the modulation of coherent phonon amplitudes are the pulse width, repetition period, and number of pulses in the pulse train. We find that it is possible to switch on or switch off the radial breathing mode (RBM) and the G-band phonons in a single wall carbon nanotube (SWNT), as a typical model of low-dimensional materials. In particular, if the repetition period matches with integer multiple of the RBM phonon period, the RBM phonon could be switched on, while the other modes are switched off. On the other hand, for the G-band, which has a higher frequency (shorter period) than the RBM, the number of pulses in the pulse train also affects the switching process. The ratios of the G-band and RBM amplitudes are found to be significantly enhanced at certain integer multiples of pulse number as a function of SWNT diameter. Such a “magic number” phenomenon in ultrafast spectroscopy can be extended to other low-dimensional materials, in which we may realize a phonon switch in the future. [less ▲]

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See detailOrigin of the Flat Band in Heavily Cs-Doped Graphene
Ehlen, N; Hell, M; Marini, G et al

in ACS Nano (2020), 14(1), 1055

A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we show that the flat band in graphene can be ... [more ▼]

A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we show that the flat band in graphene can be achieved by sandwiching a graphene monolayer by two cesium (Cs) layers. We investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculations. Our work highlights that charge transfer, zone folding of graphene bands, and the covalent bonding between C and Cs atoms are the origin of the flat energy band formation. Analysis of the Stoner criterion for the flat band suggests the presence of a ferromagnetic instability. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas. [less ▲]

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