New approaches for growth control of GaN-based HEMT structure

in Applied Physics A : Materials Science & Processing (2007), 87(3), 491-498

This paper reports on new approaches for growth control of GaN-based heterostructures for high frequency and high power application. First in situ methods are presented and their further development ... [more ▼]

This paper reports on new approaches for growth control of GaN-based heterostructures for high frequency and high power application. First in situ methods are presented and their further development discussed [1]. The development leads to a greatly improved observation of growth parameter influences in the MOVPE of GaN. A new growth process is introduced which enhances growth reproducibility [2]. This new growth process is then optimized with respect to the envisaged application. To this end process modeling will be employed. The application envisaged is the AlxGa1−xN/GaNhigh electron mobility transistor (HEMT). At last device results will be presented. All in all it will be shown how fundamental research can drive technology and how basic knowledge can be employed forprocess development with respect to device applications. [less ▲]

AlGaN/GaN Round-HEMTs on (111) silicon substrates

in Electronics Letters (2001), 37(2001), 1364-1366

AlGaN/GaN Round-HEMTs on silicon substrates have been realised and their static characteristics investigated. The AlGaN/GaN (x = 0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices ... [more ▼]

AlGaN/GaN Round-HEMTs on silicon substrates have been realised and their static characteristics investigated. The AlGaN/GaN (x = 0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices with 0.3 mm gate length exhibit a saturation current of 0.82 A/mm, a good pinch-off and a peak extrinsic transconductance of 110 mS/mm. Highest saturation current reported so far and static output characteristics up to 20 V demonstrate that the devices are capable of handling 16 W/mm of static heat dissipation without any degradation of their performance. [less ▲]

PIN-PJBT Integration: A New GaAs Based Optoelectronic Receiver,

in Proceedings of the 28th European Solid State Devices Research Conference, Bordeaux, France, (1998)

High Bandwidth InP/InGaAs Based MSM-2DEG Diodes For Optoelectronic Application,

in Proceedings of the 9th International Conference on InP and Related Materials (1997)

InP-Based Monolithically Integrated Photoreceiver for 4-10Gbit/s Optoelectronic Systems

in Proceedings of the Gallium Arsenide Application Symposium GAAS 96, Paris, France (1996)

0.2µm T-gate InP/InGaAs/InP pHEMT with InGaP Diffusion Barrier Layer Grown by LP-MOCVD using an N2-Carrier

in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996)

InP/InGaAs Photodetector Based on a High Electron Mobility Transistor Layer Structure: Its Response at 1.3 µm wavelength

in Applied Physics Letters (1995), 67(1995), 106-108

We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high ... [more ▼]

We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high electron mobility transistor structure. The photodetector is fabricated in the InP/InGaAs material system, without use of Al-containing layers. Optoelectronic measurements on a device with a finger spacing of 3 mm show a full width at half-maximum (FWHM) of the pulse response of <60 ps, which is the resolution limit of our measurement equipment. Low-temperature measurements at 40 K with electro-optical sampling at a wavelength of 890 nm show a FWHM of 1 ps. [less ▲]

Novel InP/GaInAs Photodetector for Integration in HEMT Circuits

in Proceedings of the 25th European Solid State Devices Research Conference, Den Haag, The Netherlands (1995)

A Novel InGaAs Schottky-2DEG Diode

in Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993)