![]() Wang, Taowen ![]() ![]() ![]() in Advanced Energy Materials (2022) Detailed reference viewed: 35 (10 UL)![]() Shukla, Sudhanshu ![]() ![]() ![]() in Physical Review Materials (2021), 5 Detailed reference viewed: 133 (7 UL)![]() Weiss, Thomas ![]() ![]() ![]() in Solar RRL (2021) Detailed reference viewed: 124 (6 UL)![]() Sood, Mohit ![]() ![]() ![]() in Progress in Photovoltaics (2020) Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown ... [more ▼] Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu-poor conditions but not under Cu excess.. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu-rich and Cu-poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu-rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu-poor selenide device low-temperature HT leads to passivation of bulk, whereas in Cu-rich devices no such passivation was observed. The Cu-rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu-rich selenides, whereas it increases shunt resistance in Cu-rich sulfides.. The origin of these changes in device performance was investigated with capacitance-voltage measurement which shows the considerable decrease in carrier concentration with HT in Cu-poor CuInSe2, and temperature dependent current-voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly-doped interfacial p+ layer device model in Cu-rich selenide absorbers and explain the discrepancy between Cu-poor and Curich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber. [less ▲] Detailed reference viewed: 175 (11 UL)![]() Spindler, Conrad ![]() ![]() ![]() in Physical Review Materials (2019), 3 Detailed reference viewed: 241 (21 UL) |
||