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   Highly conductive ZnO films with high near infrared transparencyHala, Matej  ; ; Redinger, Alex et alin Progress in Photovoltaics: Research and Applications (2015) We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency ... [more ▼] We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency (RF) biasing of growing ZnO films during their deposition by non-reactive sputtering makes them as conductive as when doped by aluminium (ρ≤1·10−3Ω cm). The films prepared with additional RF biasing possess lower free-carrier concentration and higher free-carrier mobility than Al-doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the near infrared region (NIR). Furthermore, these films exhibit good ambient stability and lower high-temperature stability than the AZO films of the same thickness. We also present the characteristics of Cu(InGa)Se2, CuInSe2 and Cu2ZnSnSe4-based solar cells prepared with the transparent window bilayer formed of the isolating and conductive ZnO films and compare them to their counterparts with a standard ZnO/AZO bilayer. We show that the solar cells with nominally undoped ZnO as their transparent conductive oxide layer exhibit an improved quantum efficiency for λ > 900 nm, which leads to a higher short circuit current density JSC. This aspect is specifically beneficial in preparation of the Cu2ZnSnSe4 solar cells with band gap down to 0.85 eV; our champion device reached a JSC of nearly 39 mAcm−2, an open circuit voltage of 378 mV, and a power conversion efficiency of 8.4 %. [less ▲] Detailed reference viewed: 279 (15 UL) Alternative etchning for improved Cu-rich CuInSe2 solar CellsDepredurand, Valérie ; Bertram, Tobias ; Thevenin, Maxime et alin Materials Research Society Symposia Proceedings. Materials Research Society (2015), 1771 Detailed reference viewed: 105 (10 UL)Cu-rich CuInSe2 solar cells with a Cu-poor surfaceAida, Yasuhiro ; Depredurand, Valérie ; Larsen, Jes K. et alin PROGRESS IN PHOTOVOLTAICS (2015), 23 Detailed reference viewed: 398 (45 UL)Prediction of Photovoltaic Cu(In,Ga)Se2 p-n Device Performance by forward Bias Electrochemical Analysis of Only the p-Type Cu(In,Ga)Se2 FilmsColombara, Diego ; Bertram, Tobias ; Depredurand, Valérie et alin Electrochemical Society Transactions (2015), 66(6), 19-25 This work is an attempt to rate the quality of Mo/Cu(In,Ga)Se2 films intended for fabrication of photovoltaic devices. The procedure is based on the simple current-voltage electrochemical analysis of the ... [more ▼] This work is an attempt to rate the quality of Mo/Cu(In,Ga)Se2 films intended for fabrication of photovoltaic devices. The procedure is based on the simple current-voltage electrochemical analysis of the bilayer in a Eu2+/3+-containing electrolyte solution. Two series of bilayer samples were tested electrochemically, while sister samples were completed into Mo/Cu(In,Ga)Se2/CdS/i-ZnO/Al:ZnO/Ni-Al solid state devices and their current-voltage characteristics measured in the dark. A correlation was found between the reverse saturation current density of the solid state devices and an analogous parameter extracted from the electrochemical response in forward bias. While Eu2+ was found to be metastable in water posing restrictions to the application, reproducible measurements were achieved with a methanol-based solution. The intrinsic simplicity of the proposed methodology makes it particularly suitable for the implementation of a low-cost diagnostic tool. [less ▲] Detailed reference viewed: 153 (8 UL)Current loss due to recombination in Cu-rich CuInSe2 solar cellsDepredurand, Valérie ; ; Aida, Yasuhiro et alin JOURNAL OF APPLIED PHYSICS (2014), 115 Detailed reference viewed: 273 (11 UL)Single Second Laser Annealed CuInSe2 Semiconductors from Electrodeposited Precursors as Absorber Layers for Solar CellsMeadows, Helen ; ; Depredurand, Valérie et alin Journal of Physical Chemistry C (2014), 118 (3) Detailed reference viewed: 169 (10 UL)The influence of Se pressure on the electronic properties of CuInSe2 grown under Cu-excessDepredurand, Valérie ; Bertram, Tobias ; Regesch, David et alin Applied Physics Letters (2014), 105 Detailed reference viewed: 151 (10 UL)Composition dependent characterization of copper indium diselenide thin film solar cells synthesized from electrodeposited binary selenide precursor stacks; Larsen, Jes K. ; et alin Solar Energy Materials & Solar Cells (2014), 126 Detailed reference viewed: 162 (6 UL)In-Se surface treatment of Cu-rich grown CuInSe2Bertram, Tobias ; Depredurand, Valérie ; Siebentritt, Susanne in Proceedings of the IEEE Photovoltaic Specialist Conference 2014 (2014) Detailed reference viewed: 174 (25 UL)Why do we make Cu(In,Ga)Se2 solar cells non-stoichiometric?Siebentritt, Susanne ; Gütay, Levent ; Regesch, David et alin Solar Energy Materials & Solar Cells (2013) Detailed reference viewed: 197 (4 UL)Influence of the Se environment on Cu-rich CIS devicesDepredurand, Valérie ; Bertram, Tobias ; Siebentritt, Susanne in Physica B: Condensed Matter (2013), B 439 Detailed reference viewed: 181 (24 UL)Three ways to grow faster and better CIGSeDale, Phillip ; Malaquias, Joao Corujo Branco ; Meadows, Helen et alScientific Conference (2013) Detailed reference viewed: 118 (5 UL)Influence of copper excess on the absorber quality of CulnSe2Gütay, Levent ; Regesch, David ; Larsen, Jes K. et alin Applied Physics Letters (2011), 99(151912), 1519121-15191123 Detailed reference viewed: 101 (17 UL) |
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