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See detailIntragrain charge transport in kesterite thin films-Limits arising from carrier localization
Hempel, Hannes; Redinger, Alex UL; Repins, Ingrid et al

in JOURNAL OF APPLIED PHYSICS (2016), 120(17),

Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)(4) kesterite thin films are found to increase from 32 to 140 cm(2) V-1 s(-1) with ... [more ▼]

Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)(4) kesterite thin films are found to increase from 32 to 140 cm(2) V-1 s(-1) with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by co-evaporation colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9\%-10.0 efficiency in the completed device. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). [less ▲]

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See detailSynthesis, Characterization, and Electronic Structure of Single-Crystal SnS, Sn2S3, and SnS2
Burton, Lee A.; Colombara, Diego UL; Abellon, Ruben D. et al

in Chemistry of Materials (2013), 25(24), 4908-4916

Tin sulfide is being widely investigated as an earth-abundant light harvesting material, but recorded efficiencies for SnS fall far below theoretical limits. We describe the synthesis and characterization ... [more ▼]

Tin sulfide is being widely investigated as an earth-abundant light harvesting material, but recorded efficiencies for SnS fall far below theoretical limits. We describe the synthesis and characterization of the single-crystal tin sulfides (SnS, SnS2, and Sn2S3) through chemical vapor transport, and combine electronic structure calculations with time-resolved microwave conductivity measurements to shed light on the underlying electrical properties of each material. We show that the coexistence of the Sn(II) and Sn(IV) oxidation states would limit the performance of SnS in photovoltaic devices due to the valence band alignment of the respective phases and the ''asymmetry'' in the underlying point defect behavior. Furthermore, our results suggest that Sn2S3, in addition to SnS, is a candidate material for low-cost thin-film solar cells. [less ▲]

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