Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment

in Solar RRL (2021)

Waste- and Cd-Free Inkjet-Printed Zn(O,S) Buffer for Cu(In,Ga)(S,Se)2 Thin-Film Solar Cells

in ACS Applied Materials and Interfaces (2021), 13

Atmospheric-Pressure Synthesis of Atomically Smooth, Conformal, and Ultrathin Low‑k Polymer Insulating Layers by Plasma-Initiated and Ultrathin Low‑k Polymer Insulating Layers by Plasma-Initiated

in ACS Applied Polymer Materials (2020)

Solution-based synthesis of kesterite thin film semiconductors

in Journal of Physics : Energy (2020)

Thin-film micro-concentrator solar cells

in Journal of Physics : Energy (2020)

Area-selective electrodeposition of micro islands for CuInSe2-based photovoltaics

in Results in Physics (2019), 12

Synthesis, theoretical and experimental characterisation of thin film Cu2Sn1-xGexS3 ternary alloys (x = 0 to 1): Homogeneous intermixing of Sn and Ge

in Acta Materialia (2018), 151

Cu2Sn1-xGexS3 is a p-type semiconductor alloy currently investigated for use as an absorber layer in thin film solar cells. The aim of this study is to investigate the properties of this alloy in thin ... [more ▼]

Cu2Sn1-xGexS3 is a p-type semiconductor alloy currently investigated for use as an absorber layer in thin film solar cells. The aim of this study is to investigate the properties of this alloy in thin film form in order to establish relationships between group IV composition and structural, vibrational and opto-electronic properties. Seven single phase Cu2Sn1-xGexS3 films are prepared from x ¼ 0 to 1, showing a uniform distribution of Ge and Sn laterally and in depth. The films all show a monoclinic crystal structure. The lattice parameters are extracted using Le Bail refinement and show a linear decrease with increasing Ge content. Using density-functional theory with hybrid functionals, we calculate the Raman active phonon frequencies of Cu2SnS3 and Cu2GeS3. For the alloyed compounds, we use a virtual atom approximation. The shift of the main Raman peak from x ¼ 0 to x ¼ 1 can be explained as being half due to the change in atomic masses and half being due to the different bond strength. The bandgaps of the alloys are extracted from photoluminescence measurements and increase linearly from about 0.90 to 1.56 eV with increasing Ge. The net acceptor density of all films is around 1018 cm 3. These analyses have established that the alloy forms a solid solution over the entire composition range meaning that intentional band gap grading should be possible for future absorber layers. The linear variation of the unit cell parameters and the band gap with group IV content allows composition determination by scattering or optical measurements. Further research is required to reduce the doping density by two orders of magnitude in order to improve the current collection within a solar cell device structure. [less ▲]

Locally-confined electrodeposition of Cu(In,Ga)Se2micro islands for micro-concentrator solar cells.

in IEEE (2018)

Deliberate and Accidental Gas-Phase Alkali Doping of Chalcogenide Semiconductors: Cu(In,Ga)Se2

in Scientific Reports (2017), 7

Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se2 (CIGSe) solar cells. Doping is normally achieved through solid state reactions, but recent observations of ... [more ▼]

Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se2 (CIGSe) solar cells. Doping is normally achieved through solid state reactions, but recent observations of gas phase alkali transport in the kesterite sulfide (Cu2ZnSnS4) system (re)open the way to a novel gas-phase doping strategy. However, the current understanding of gas-phase alkali transport is very limited. This work (i) shows that CIGSe device efficiency can be improved from 2% to 8% by gas-phase sodium incorporation alone, (ii) identifies the most likely routes for gas-phase alkali transport based on mass spectrometric studies, (iii) provides thermochemical computations to rationalize the observations and (iv) critically discusses the subject literature with the aim to better understand the chemical basis of the phenomenon. These results suggest that accidental alkali metal doping occurs all the time, that a controlled vapor pressure of alkali metal could be applied during growth to dope the semiconductor, and that it may have to be accounted for during the currently used solid state doping routes. It is concluded that alkali gas-phase transport occurs through a plurality of routes and cannot be attributed to one single source. [less ▲]

Silver Doped Cu2SnS3 Absorber Layers for Solar Cells Application

in IEEE Journal of Photovoltaics (2017)