References of "Brida, Daniele 50031325"
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See detailDynamics of electron-emission currents in plasmonic gaps induced by strong fields
Aguirregabiria, Garikoitz; Marinica, Dana-Codruta; Ludwig, Markus et al

in FARADAY DISCUSSIONS (2019), 214

The dynamics of ultrafast electron currents triggered by femtosecond laser pulse irradiation of narrow gaps in a plasmonic dimer is studied using quantum mechanical Time-Dependent Density Functional ... [more ▼]

The dynamics of ultrafast electron currents triggered by femtosecond laser pulse irradiation of narrow gaps in a plasmonic dimer is studied using quantum mechanical Time-Dependent Density Functional Theory (TDDFT). The electrons are injected into the gap due to the optical field emission from the surfaces of the metal nanoparticles across the junction. Further evolution of the electron currents in the gap is governed by the locally enhanced electric fields. The combination of TDDFT and classical modelling of the electron trajectories allows us to study the quiver motion of the electrons in the gap region as a function of the Carrier Envelope Phase (CEP) of the incident pulse. In particular, we demonstrate the role of the quiver motion in establishing the CEP-sensitive net electric transport between nanoparticles. [less ▲]

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See detailControl of excitonic absorption by thickness variation in few-layer GaSe
Budweg, Arne; Yadav, Dinesh; Grupp, Alexander et al

in PHYSICAL REVIEW B (2019), 100(4),

We control the thickness of GaSe on the level of individual layers and study the corresponding optical absorption via highly sensitive differential transmission measurements. Suppression of excitonic ... [more ▼]

We control the thickness of GaSe on the level of individual layers and study the corresponding optical absorption via highly sensitive differential transmission measurements. Suppression of excitonic transitions is observed when the number of layers is smaller than a critical value of 8. Through ab initio modelling we are able to link this behavior to a fundamental change in the band structure that leads to the formation of a valence band shaped as an inverted Mexican hat in thin GaSe. The thickness-controlled modulation of the optical properties provides attractive resources for the development of functional optoelectronic devices based on a single material. [less ▲]

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See detailUltrafast carrier recombination in highly n-doped Ge-on-Si films
Allerbeck, J.; Herbst, A. J.; Yamamoto, Y. et al

in APPLIED PHYSICS LETTERS (2019), 114(24),

We study the femtosecond carrier dynamics of n-type doped and biaxially strained Ge-on-Si films which occurs upon impulsive photoexcitation by means of broadband near-IR transient absorption spectroscopy ... [more ▼]

We study the femtosecond carrier dynamics of n-type doped and biaxially strained Ge-on-Si films which occurs upon impulsive photoexcitation by means of broadband near-IR transient absorption spectroscopy. The modeling of the experimental data takes into account the static donor density in a modified rate equation for the description of the temporal recombination dynamics. The measurements confirm the negligible contribution at a high n-type doping concentration, in the 10(19)cm(-3) range, of Auger processes as compared to defect-related Shockley-Read-Hall recombination. Energy resolved dynamics reveal further insights into the doping-related band structure changes and suggest a reshaping of direct and indirect conduction band valleys to a single effective valley along with a significant spectral broadening of the optical transitions. [less ▲]

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See detailPump-probe spectroscopy study of ultrafast temperature dynamics in nanoporous gold
Ortolani, Michele; Mancini, Andrea; Budweg, Arne et al

in PHYSICAL REVIEW B (2019), 99(3),

We explore the influence of the nanoporous structure on the thermal relaxation of electrons and holes excited by ultrashort laser pulses (similar to 7 fs) in thin gold films. Plasmon decay into hot ... [more ▼]

We explore the influence of the nanoporous structure on the thermal relaxation of electrons and holes excited by ultrashort laser pulses (similar to 7 fs) in thin gold films. Plasmon decay into hot electron-hole pairs results in the generation of a Fermi-Dirac distribution thermalized at a temperature T-e higher than the lattice temperature T-1. The relaxation times of the energy exchange between electrons and lattice, here measured by pump-probe spectroscopy, is slowed down by the nanoporous structure, resulting in much higher peak T-e than for bulk gold films. The electron-phonon coupling constant and the Debye temperature are found to scale with the metal filling factor f and a two-temperature model reproduces the data. The results open the way for electron temperature control in metals by engineering of the nanoporous geometry. [less ▲]

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See detailPlasmonic mid-infrared third harmonic generation in germanium nanoantennas
Fischer, Marco P.; Riede, Aaron; Gallacher, Kevin et al

in Light: Science and Applications (2018)

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See detailSwitchable dissociation of excitons bound at strained CdTe/CdS interfaces
Enders, Florian; Budweg, Arne; Zeng, Peng et al

in Nanoscale (2018)

Detailed reference viewed: 108 (10 UL)