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See detailBackgating high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substrates
Kuzmik, J.; Blaho, M.; Pogany, D. et al

in Proceedings of the ESSDERC 2003. Estoril, Portugal (2003)

Backgating effect as well as breakdown and high-current performance of AlGaN/GaN HEMTs on silicon substrates are studied. The material structure of investigated devices differ in the thickness of ... [more ▼]

Backgating effect as well as breakdown and high-current performance of AlGaN/GaN HEMTs on silicon substrates are studied. The material structure of investigated devices differ in the thickness of stressrelaxing intermediate layer sequence (~1 μm and ~2.5 μm thick). It is shown that the transistor backgating effect is reduced for the thicker sequence. Similarly, the reverse gate current is two orders of the magnitude lower and the gate-drain breakdown voltage increases substantially in devices with the thicker sequence. Increase from ~40 V to ~160 V of the HEMT blocking capability measured under electrostatic discharge-like conditions is also observed. [less ▲]

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