References of "Beneking, H."
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See detailSubmicrometer Silicon Permeable Base Transistors with Buried CoSi2 Gates
Schüppen, A.; Vescan, L.; Marso, Michel UL et al

in Electronics Letters (1993), 29(1993), 215-217

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See detailGaInAs Camel transistors With Current Gain Above 6 at Room Temperature
Marso, Michel UL; Zwinge, G.; Grützmacher, D. et al

in Electronics Letters (1991), 27(1991), 335-337

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See detailGaInAs Camel Transistors Grown by MOCVD
Marso, Michel UL; Zwinge, G.; Beneking, H.

in Electronics Letters (1989), 25(1989), 1462-1463

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See detailGaInAs camel diodes grown by MBE
Marso, Michel UL; Chin, A.; Bhattacharya, P. et al

in Proceedings of the 18th European Solid State Device Research Conference (ESSDERC 88), Montpellier, France, 1988, J. de Physique, Colloque C4, suppl. 9 (1988)

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See detailLow-Noise Bulk Unipolar Devices in Si and GaAs
Beneking, H.; Cloos, J.-M.; Fernholz, G. et al

in Proceedings of the 17th European Solid State Devices Research Conference, Bologna, Italy (1987)

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See detailSilicon Bulk Barrier Diodes Fabricated by LPVPE, High Speed Electronics
Beneking, H.; Vescan, L.; Gruhle, A. et al

Book published by Springer (1986)

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