Micro‐sized thin‐film solar cells via area‐selective electrochemical deposition for concentrator photovoltaics application

in scientific reports (2020)

Oxidation as Key Mechanism for Efficient Interface Passivation in Cu(In,Ga)Se2 Thin-Film Solar Cells

in Physical Review Applied (2020)

Electronic defects in Cu(In,Ga)Se2: Towards a comprehensive model

in Physical Review Materials (2019), 3

OPTICAL ANALYSIS OF EFFICIENCY LIMITATIONS OF CU(IN,GA)SE2 GROWN UNDER COPPER EXCESS

Doctoral thesis (2019)

Solar cells made from the compound semiconductor Cu(In,Ga)Se2 reach efficiencies of 22:9 % and are thus even better than multi crystalline silicon solar cells. All world records are achieved using ... [more ▼]

Solar cells made from the compound semiconductor Cu(In,Ga)Se2 reach efficiencies of 22:9 % and are thus even better than multi crystalline silicon solar cells. All world records are achieved using absorber layers with an overall copper deficient composition, but Cu-rich grown samples have multiple favourable properties. However, especially losses in the open circuit voltage limit the device performance. Within this work these efficiency limitations of chalcopyrites grown with copper excess are investigated. The work has been divided into four chapters addressing different scientific questions. (i) Do alkali treatments improve Cu-rich absorber layers? The alkali treatment, which lead to the recent improvements of the efficiency world record, is adapted to CuInSe2 samples with Cu-rich composition. The treatment leads to an improvement of the VOC which originates roughly equally from an improvement of the bulk and the removal of a defect close to the interface. The treatment also improves the VOC of Cu-poor samples. In both cases, the treatment increases the fill factor (FF) and leads to a reduction of copper content at the surface. (ii) Is the VOC limited by deep defects in Cu-rich Cu(In,Ga)Se2? A deep defect, which likely limits the VOC, is observed in photoluminescence measurements (PL) independent of a surface treatment. The defect level is proposed to originate from the second charge transition of the CuIn antisite defect (CuIn(-1/-2)). During the investigation also a peak at 0:9 eV is detected and attributed to a DA-transition involving a third acceptor situated (135 ± 10) meV above the valence band. The A3 proposed to originate from the indium vacancy (VIn). Furthermore the defect was detected in admittance measurements and in Cu(In,Ga)Se2 samples with low gallium content. (iii) Is the diode factor intrinsically higher in Cu-rich chalcopyrites? Cu-rich solar cells exhibit larger diode ideality factors which reduce the FF. A direct link between the power law exponent from intensity dependent PL measurements of absorbers and the diode factor of devices is derived and verified using Cu-poor Cu(In,Ga)Se2 samples. This optical diode factor is the same in Cu-rich and Cu-poor samples. (iv) Is the quasi Fermi level splitting (qFLs) of Cu-rich Cu(In,Ga)Se2 absorber layers comparable to Cu-poor samples? Measuring the qFLs of passivated Cu-rich and Cu-poor Cu(In,Ga)Se2 samples, on average a 120 meV lower splitting is determined for Cu-rich samples. This difference increases with gallium content and is likely linked to a defect moving deeper into the bandgap, possibly related to the second charge transition of the CuIn antisite defect. Overall, samples with Cu-rich composition are not limited by the diode factor. However, a deep defect band causes recombination lowering the qFLs and thus the VOC. This defect is not removed by alkali treatments. A key component to improve Cu-rich solar cells in the future, especially Cu(In,Ga)Se2, will be to remove or passivate this defect level. [less ▲]

The hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layers

in Journal of Physics: Condensed Matter (2019), 31

Synthesis, theoretical and experimental characterisation of thin film Cu2Sn1-xGexS3 ternary alloys (x = 0 to 1): Homogeneous intermixing of Sn and Ge

in Acta Materialia (2018), 151

Cu2Sn1-xGexS3 is a p-type semiconductor alloy currently investigated for use as an absorber layer in thin film solar cells. The aim of this study is to investigate the properties of this alloy in thin ... [more ▼]

Cu2Sn1-xGexS3 is a p-type semiconductor alloy currently investigated for use as an absorber layer in thin film solar cells. The aim of this study is to investigate the properties of this alloy in thin film form in order to establish relationships between group IV composition and structural, vibrational and opto-electronic properties. Seven single phase Cu2Sn1-xGexS3 films are prepared from x ¼ 0 to 1, showing a uniform distribution of Ge and Sn laterally and in depth. The films all show a monoclinic crystal structure. The lattice parameters are extracted using Le Bail refinement and show a linear decrease with increasing Ge content. Using density-functional theory with hybrid functionals, we calculate the Raman active phonon frequencies of Cu2SnS3 and Cu2GeS3. For the alloyed compounds, we use a virtual atom approximation. The shift of the main Raman peak from x ¼ 0 to x ¼ 1 can be explained as being half due to the change in atomic masses and half being due to the different bond strength. The bandgaps of the alloys are extracted from photoluminescence measurements and increase linearly from about 0.90 to 1.56 eV with increasing Ge. The net acceptor density of all films is around 1018 cm 3. These analyses have established that the alloy forms a solid solution over the entire composition range meaning that intentional band gap grading should be possible for future absorber layers. The linear variation of the unit cell parameters and the band gap with group IV content allows composition determination by scattering or optical measurements. Further research is required to reduce the doping density by two orders of magnitude in order to improve the current collection within a solar cell device structure. [less ▲]

Locally-confined electrodeposition of Cu(In,Ga)Se2micro islands for micro-concentrator solar cells.

in IEEE (2018)

Interdiffusion and Doping Gradients at the Buffer/Absorber Interface in Thin-Film Solar Cells

in ACS Applied Materials and Interfaces (2018), 10

Potassium fluoride postdeposition treatment with etching step on both Cu-rich and Cu-poor CuInSe2 thin film solar cells

in Physical Review Materials (2018), 2(10), 105405

Silver Doped Cu2SnS3 Absorber Layers for Solar Cells Application

in IEEE Journal of Photovoltaics (2017)