References of "Arango, Y. C."
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See detailReduction of skin effect losses in double-level-T-gate structure
Mikulics, Martin; Hardtdegen, Hilde; Arango, Y. C. et al

in Applied Physics Letters (2014), 105

We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process ... [more ▼]

We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length Lg=200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 um gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of fmax value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions. [less ▲]

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See detailNovel Double-Level-T-Gate Technology
Fox, Alfred; Mikulics, Martin; Hardtdegen, Hilde et al

in Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems (2014, October)

We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The ... [more ▼]

We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the fabrication of 100 nanometer size T-gates for transistors. High electron mobility transistors (HEMTs) were fabricated on an AlGaN/GaN/sapphire material structure with an original gate length Lg of 2 μm. Their cutoff frequency of 6 GHz was improved to 60 GHz by etching the gate to a 200 nm length double T-gate contact. [less ▲]

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See detailInGaN nano-LEDs for energy saving optoelectronics
Marso, Michel UL; Mikulics, Martin; Winden, Andreas et al

in Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems (2014, October)

Vertically integrated III-nitride nano-LEDs designed for operation in the telecommunication-wavelength range were fabricated and tested in the (p- GaN/InGaN/n-GaN/sapphire) material system. We found that ... [more ▼]

Vertically integrated III-nitride nano-LEDs designed for operation in the telecommunication-wavelength range were fabricated and tested in the (p- GaN/InGaN/n-GaN/sapphire) material system. We found that the band edge luminescence energy of the nano-LEDs could be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates; it depends linearly on the structure size. The results of reliability measurements prove that our technological process is perfectly suited for long-term operation of the LEDs without any indication of degradation effects. The presented technology shows strong potential for future low energy consumption optoelectronics. [less ▲]

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See detailIII-nitride nano-LEDs for single photon lithography
Trellenkamp, Stefan; Mikulics, Martin; Winden, Andreas et al

in Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems (2014, October)

We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano ... [more ▼]

We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits. [less ▲]

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