References of "Adeleye, Damilola 50032286"
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See detailPhotoluminescence assessment of materials for solar cell absorbers
Siebentritt, Susanne UL; Rau, Uwe; Gharabeiki, Sevan UL et al

in Faraday Discussions (2022)

Absolute photoluminescence measurements present a tool to predict the quality of photovoltaic absorber materials before finishing the solar cells. Quasi Fermi level splitting predicts the maximal open ... [more ▼]

Absolute photoluminescence measurements present a tool to predict the quality of photovoltaic absorber materials before finishing the solar cells. Quasi Fermi level splitting predicts the maximal open circuit voltage. However, various methods to extract quasi Fermi level splitting are plagued by systematic errors in the range of 10–20 meV. It is important to differentiate between the radiative loss and the shift of the emission maximum. They are not the same and when using the emission maximum as the “radiative” band gap to extract the quasi Fermi level splitting from the radiative efficiency, the quasi Fermi level splitting is 10 to 40 meV too low for a typical broadening of the emission spectrum. However, radiative efficiency presents an ideal tool to compare different materials without determining the quasi Fermi level splitting. For comparison with the open circuit voltage, a fit of the high energy slope to generalised Planck’s law gives more reliable results if the fitted temperature, i.e. the slope of the high energy part, is close to the actual measurement temperature. Generalised Planck’s law also allows the extraction of a non-absolute absorptance spectrum, which enables a comparison between the emission maximum energy and the absorption edge. We discuss the errors and the indications when they are negligible and when not. [less ▲]

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See detailSulfide Chalcopyrite Solar Cells–Are They the Same as Selenides with a Wider Bandgap?
Siebentritt, Susanne UL; Lomuscio, Alberto UL; Adeleye, Damilola UL et al

in Physica Status Solidi. Rapid Research Letters (2022), 2200126

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See detailSulfur Treatment Passivates Bulk Defects in Sb2Se3Photocathodes for Water Splitting
Prabhakar, Rajiv Ramanujam; Moehl, Thomas; Friedrich, Dennis et al

in Advanced Functional Materials (2022)

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See detailWaste- and Cd-Free Inkjet-Printed Zn(O,S) Buffer for Cu(In,Ga)(S,Se)2 Thin-Film Solar Cells
Chu, van Ben UL; Siopa, Daniel UL; Debot, Alice UL et al

in ACS Applied Materials and Interfaces (2021), 13

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See detailAbsorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cells
Sood, Mohit UL; Elanzeery, Hossam UL; Adeleye, Damilola UL et al

in Progress in Photovoltaics (2020)

Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown ... [more ▼]

Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu-poor conditions but not under Cu excess.. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu-rich and Cu-poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu-rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu-poor selenide device low-temperature HT leads to passivation of bulk, whereas in Cu-rich devices no such passivation was observed. The Cu-rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu-rich selenides, whereas it increases shunt resistance in Cu-rich sulfides.. The origin of these changes in device performance was investigated with capacitance-voltage measurement which shows the considerable decrease in carrier concentration with HT in Cu-poor CuInSe2, and temperature dependent current-voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly-doped interfacial p+ layer device model in Cu-rich selenide absorbers and explain the discrepancy between Cu-poor and Curich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber. [less ▲]

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