![]() Weiss, Thomas ![]() ![]() ![]() in Journal of Applied Physics (2016), 120 Detailed reference viewed: 211 (10 UL)![]() Rey, Germain ![]() ![]() ![]() in Solar Energy Materials and Solar Cells (2016), 151 Detailed reference viewed: 268 (18 UL)![]() Weiss, Thomas ![]() Doctoral thesis (2015) Detailed reference viewed: 214 (18 UL)![]() Siebentritt, Susanne ![]() ![]() ![]() in Solar Energy Materials and Solar Cells (2015) Detailed reference viewed: 270 (8 UL)![]() Hala, Matej ![]() ![]() in Progress in Photovoltaics (2015) We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency ... [more ▼] We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency (RF) biasing of growing ZnO films during their deposition by non-reactive sputtering makes them as conductive as when doped by aluminium (ρ≤1·10−3Ω cm). The films prepared with additional RF biasing possess lower free-carrier concentration and higher free-carrier mobility than Al-doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the near infrared region (NIR). Furthermore, these films exhibit good ambient stability and lower high-temperature stability than the AZO films of the same thickness. We also present the characteristics of Cu(InGa)Se2, CuInSe2 and Cu2ZnSnSe4-based solar cells prepared with the transparent window bilayer formed of the isolating and conductive ZnO films and compare them to their counterparts with a standard ZnO/AZO bilayer. We show that the solar cells with nominally undoped ZnO as their transparent conductive oxide layer exhibit an improved quantum efficiency for λ > 900 nm, which leads to a higher short circuit current density JSC. This aspect is specifically beneficial in preparation of the Cu2ZnSnSe4 solar cells with band gap down to 0.85 eV; our champion device reached a JSC of nearly 39 mAcm−2, an open circuit voltage of 378 mV, and a power conversion efficiency of 8.4 %. [less ▲] Detailed reference viewed: 316 (17 UL)![]() ; Mousel, Marina ![]() ![]() in JOURNAL OF APPLIED PHYSICS (2015), 118 Detailed reference viewed: 225 (6 UL)![]() Rey, Germain ![]() ![]() ![]() in Applied Physics Letters (2014), 105 Detailed reference viewed: 264 (21 UL)![]() Redinger, Alex ![]() ![]() ![]() in IEEE Journal of Photovoltaics (2014) Detailed reference viewed: 223 (8 UL)![]() Weiss, Thomas ![]() ![]() ![]() in IEEE JOURNAL OF PHOTOVOLTAICS (2014), 4 Detailed reference viewed: 203 (12 UL)![]() Redinger, Alex ![]() ![]() ![]() Scientific Conference (2013, June) Detailed reference viewed: 193 (5 UL)![]() Mousel, Marina ![]() ![]() in Advanced Energy Materials (2013), 4 Detailed reference viewed: 361 (18 UL)![]() Weiss, Thomas ![]() ![]() ![]() in Applied Physics Letters (2013) Detailed reference viewed: 234 (7 UL)![]() ![]() Weiss, Thomas ![]() ![]() ![]() Scientific Conference (2013) Detailed reference viewed: 171 (11 UL) |
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