References of "Siebentritt, Susanne 50003089"
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See detailOrdering kesterite improves solar cells:A low temperature post-deposition annealing study
Rey, Germain UL; Weiss, Thomas UL; Sendler, Jan UL et al

in Solar Energy Materials & Solar Cells (2016), 151

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See detailCu–Zn disorder and band gap fluctuations in Cu2ZnSn(S,Se)4: Theoretical and experimental investigations
Scragg, Jonathan J. S.; Larsen, Jes K. UL; Kumar, Mukesh et al

in Physica Status Solidi B. Basic Research (2016), 253(2), 247-254

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See detailTransparent conductive CuCrO2 thin films deposited by pulsed injection metal organic chemical vapor deposition: up-scalable process technology for an improved transparency/conductivity trade-off
Crêpellière J.; Lunca Popa P.; Bahlawane N. et al

in Journal of Materials Chemistry C (2016)

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See detailEnvironmental stability of highly conductive nominally undoped ZnO layers
Hala, Matej UL; Inoue, Yukari; Kato, Iroki et al

in IEEE Photovoltaic Specialists Conference. Conference Record (2016), 978-1-5090-2724

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See detailPhotoluminescence studies in epitaxial CZTSe thin films
Sendler, Jan UL; Thevenin, Maxime UL; Werner, Florian UL et al

in Journal of Applied Physics (2016), 120

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See detailDoping mechanism in pure CuInSe2
Werner, Florian UL; Colombara, Diego UL; Melchiorre, Michele UL et al

in JOURNAL OF APPLIED PHYSICS (2016), 119

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See detailQuasi Fermi level splitting of Cu-rich and Cu-poor Cu(In,Ga)Se2 absorber layers
Babbe, Finn UL; Choubrac, Léo UL; Siebentritt, Susanne UL

in Applied Physics Letters (2016), 109

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See detailIs the Cu/Zn disorder the main culprit for the voltage deficit in kesterite solar cells?
Bourdais S.; Choné C.; Delatouche B. et al

in Advanced Energy Materials (2016), 6 - 15002276

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See detailImproved Chemically Deposited Zn(O,S) Buffers for Cu(In,Ga)(S,Se)2 Solar Cells by Controlled Incorporation of Indium.
Hönes, Christian UL; Fuchs, Anne; Zweigart, Siegmund et al

in IEEE Journal of Photovoltaics (2016), 6(1),

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See detailStudy on the quasi Fermi level splitting of Cu(In,Ga)Se2 absorber layers with Cu-rich and Cu-poor composition
Babbe, Finn UL; Choubrac, Léo UL; Siebentritt, Susanne UL

in IEEE Photovoltaic Specialists Conference. Conference Record (2016)

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See detailWhat is the band gap of kesterite?
Siebentritt, Susanne UL; Rey, Germain UL; Finger, Ashley UL et al

in Solar Energy Materials & Solar Cells (2015)

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See detailHighly conductive ZnO films with high near infrared transparency
Hala, Matej UL; Fujii, Shohei; Redinger, Alex UL et al

in Progress in Photovoltaics: Research and Applications (2015)

We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency ... [more ▼]

We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency (RF) biasing of growing ZnO films during their deposition by non-reactive sputtering makes them as conductive as when doped by aluminium (ρ≤1·10−3Ω cm). The films prepared with additional RF biasing possess lower free-carrier concentration and higher free-carrier mobility than Al-doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the near infrared region (NIR). Furthermore, these films exhibit good ambient stability and lower high-temperature stability than the AZO films of the same thickness. We also present the characteristics of Cu(InGa)Se2, CuInSe2 and Cu2ZnSnSe4-based solar cells prepared with the transparent window bilayer formed of the isolating and conductive ZnO films and compare them to their counterparts with a standard ZnO/AZO bilayer. We show that the solar cells with nominally undoped ZnO as their transparent conductive oxide layer exhibit an improved quantum efficiency for λ > 900 nm, which leads to a higher short circuit current density JSC. This aspect is specifically beneficial in preparation of the Cu2ZnSnSe4 solar cells with band gap down to 0.85 eV; our champion device reached a JSC of nearly 39 mAcm−2, an open circuit voltage of 378 mV, and a power conversion efficiency of 8.4 %. [less ▲]

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See detailThin film solar cells – success, challenges and perspectives
Siebentritt, Susanne UL

Scientific Conference (2015, January 22)

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See detailEpitaxial Cu2ZnSnSe4 thin films and devices
Redinger, Alex UL; Groiss, Heiko; Sendler, Jan UL et al

in THIN SOLID FILMS (2015), 582

Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different ... [more ▼]

Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different secondary phases are present in the epitaxial layer. The main secondary phases are Cu2SnSe3 and ZnSe which grow epitaxially on top of the CZTSe. Transmission electron microscopy measurements show that the epitaxial CZTSe grows predominantly parallel to the c-direction. Epitaxial CZTSe solar cells with a maximum power conversion efficiency of 2.1\%, an open-circuit voltage of 223 mV and a current density of 16 mA/cm(2) are presented. (C) 2014 Elsevier B.V. All rights reserved. [less ▲]

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See detailAlternative etchning for improved Cu-rich CuInSe2 solar Cells
Depredurand, Valérie UL; Bertram, Tobias UL; Thevenin, Maxime UL et al

in Materials Research Society Symposia Proceedings. Materials Research Society (2015), 1771

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See detailAtom probe tomography study of internal interfaces in Cu2ZnSnSe4 thin-films
Schwarz, T.; Cojocaru-Mir edin, O.; Choi, P. et al

in Journal of Applied Physics (2015), 118

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See detailDifferent Bandgaps in Cu2ZnSnSe4: A High Temperature Coevaporation Study
Redinger, Alex UL; Sendler, Jan UL; Djemour, Rabie et al

in IEEE Journal of Photovoltaics (2015), 5(2), 641-648

We present a high-temperature Cu2ZnSnSe4 coevaporation study, where solar cells with a power conversion efficiency of 7.1 have been achieved. The process is monitored with laser light scattering in order ... [more ▼]

We present a high-temperature Cu2ZnSnSe4 coevaporation study, where solar cells with a power conversion efficiency of 7.1 have been achieved. The process is monitored with laser light scattering in order to follow the incorporation of the Sn into the film. We observe the segregation of ZnSe at the Mo/CZTSe interface. Optical analysis has been carried out with photoluminescence and spectrophotometry. We observe strong band tailing and a bandgap, which is significantly lower than in other reported efficient CZTSe absorbers. The photoluminescence at room temperature is lower than the bandgap due to the existence of a large quantity of tail states. Finally, we present effects of low-temperature postannealing of the absorbers on ordering of the Cu/Zn atoms in CZTSe and solar cell parameters. We observe strong changes in all solar cell parameters upon annealing. The efficiency of the annealed devices is significantly reduced, although ordering is improved compared with ones made from nonannealed absorbers. [less ▲]

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See detailMultiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence (vol 116, 073509, 2014)
Djemour, Rabie; Redinger, Alex UL; Mousel, Marina et al

in JOURNAL OF APPLIED PHYSICS (2015), 118(8),

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See detailDiffuse Electroreflectance of thin-film solar cells: Suppression of interference-related lineshape distortions
Krämmer, Christoph; Huber, Christian; Redinger, Alex UL et al

in Applied Physics Letters (2015), 107

Detailed reference viewed: 120 (5 UL)