References of "Siebentritt, Susanne 50003089"
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See detailGrain boundaries in Cu (In, Ga) (Se, S)2 thin-film solar cells
Rau, Uwe; Taretto, Kurt; Siebentritt, Susanne UL

in Applied Physics A : Materials Science & Processing (2009), 96(1), 221-234

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See detailKesterite absorber layer uniformity from electrodeposited pre-cursors
Kurihara, Masato UL; Berg, Dominik UL; Fischer, Johannes UL et al

in Physica Status Solidi A. Applied Research (2009), 6(5), 1241-1244

Detailed reference viewed: 130 (3 UL)
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See detailThin Film Preparation of Chalcopyrites for Solar Cells and Fundamental Material Physics
Siebentritt, Susanne UL

Scientific Conference (2008, October)

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See detailPoint defects and grain boundaries in chalcopyrites
Siebentritt, Susanne UL

Scientific Conference (2008, June)

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See detailEpitaxial growth of very large grain bicrystalline Cu(In, Ga)Se2 thin films by a hybrid sputtering method
Hall, Allen J.; Hebert, Daman; Lei, C. et al

in Applied Physics Letters (2008), 103(8), 083540-1

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See detailMetastable behavior of donors in CuGaSe2 under illumination
Siebentritt, Susanne UL; Rissom, Thorsten

in Applied Physics Letters (2008), 92

Several metastable effects have been observed in chalcopyrite solar cells. Recently, they have been related to the amphoteric behavior of the Se vacancy. We give an independent experimental evidence on ... [more ▼]

Several metastable effects have been observed in chalcopyrite solar cells. Recently, they have been related to the amphoteric behavior of the Se vacancy. We give an independent experimental evidence on this amphoteric behavior. By comparing charge carrier densities obtained from Hall effect measurements under illumination and in the dark, we conclude that illumination removes compensating donors. [less ▲]

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See detailCharge and doping distributions by capacitance profiling in Cu(In,Ga)Se2 solar cells
Cwil, Michael; Igalson, Malgorzata; Zabierowski, Powel et al

in Journal of Applied Physics (2008), 103

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See detailPhotoluminescence and Raman spectra of the ordered vacancy compound CuGa5Se8
Grossberg, Michael; Krustok, Jüri; Bodnar, I. et al

in Physica B: Condensed Matter (2008)

We studied the photoluminescence (PL) and Raman properties of the ordered defect compound CuGa5Se8. Twelve peaks were detected from the room-temperature Raman spectra with the A1 mode around 160 cm-1. Due ... [more ▼]

We studied the photoluminescence (PL) and Raman properties of the ordered defect compound CuGa5Se8. Twelve peaks were detected from the room-temperature Raman spectra with the A1 mode around 160 cm-1. Due to the stress in the polycrystalline thin film the corresponding frequencies of the Raman modes of a CuGa5Se8 single crystal were slightly shifted. One broad asymmetric PL band at 1.788 and 1.765 eV was observed at 10 K in the PL spectra of CuGa5Se8 single crystal and polycrystalline layer, respectively. The temperature and laser power dependencies of the PL spectra were also studied. The shape and properties of the PL band assure the presence of potential fluctuations and the analyses of the PL data suggest that the emission is due to band-to-tail (BT) or band-toimpurity (BI) recombination. [less ▲]

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See detailPolarization of defect related optical transitions in chalcopyrites
Hönes, Katja UL; Eickenberg, Michael; Siebentritt, Susanne UL et al

in Applied Physics Letters (2008), 93(9), 0003-6951

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See detailPolarized Photoluminescence of Defects in CuGaSe2
Siebentritt, Susanne UL

Scientific Conference (2007)

Detailed reference viewed: 80 (1 UL)
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See detailThe role of the CdS buffer layer in CuGaSe2-based solar cells
Caballero, Raquel; Kaufmann, Christian A.; Cwil, Michael et al

in Journal of Physics : Condensed Matter (2007), 19(35), 356222-32

Detailed reference viewed: 129 (0 UL)