References of "Marso, Michel 50002313"
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See detailOvergrown PBT's: Calculations and Measurements
Schüppen, A.; Marso, Michel UL; Lüth, H.

in IEEE Transactions on Electron Devices (1994), 41(1994), 751-760

The device parameters of overgrown silicon permeable base transistors (PBT’s) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some ... [more ▼]

The device parameters of overgrown silicon permeable base transistors (PBT’s) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some design rules arise for optimizing the high frequency performance of PBT’s. The calculations indicate the source-drain distance as the essential PBT parameter, which should be kept below 200 nm in order to expect unity current- gain frequencies fT over 50 GHz. In addition, PBT’s with buried monocrystalline CoSiz -gates have been fabricated by high dose cobalt ion implantation through a grid-like mask into MOS-compatible n -type Si(lO0). Measurements revealed a transconductance of 70 mS/mm and a fT value of 6 GHz. The comparison between measured and simulated output characteristics shows good agreement. [less ▲]

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See detailOptimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conductivity for HEMT Application
Meyer, R.; Hardtdegen, H.; Leuther, A. et al

in Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993)

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See detailA Novel InGaAs Schottky-2DEG Diode
Marso, Michel UL; Kordoš, P.; Fox, A. et al

in Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993)

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See detailSubmicrometer Silicon Permeable Base Transistors with Buried CoSi2 Gates
Schüppen, A.; Vescan, L.; Marso, Michel UL et al

in Electronics Letters (1993), 29(1993), 215-217

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See detailSchottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and strained InGaAs
Kordoš, P.; Marso, Michel UL

in EMS Datareviews (1993), (INSPEC IEE London), 131-155

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See detailSchottky Barrier Height Enhancement on n-In0.53Ga0.47As
Kordoš, P.; Marso, Michel UL; Meyer, R. et al

in Journal of Applied Physics (1992), 72(1992), 2347-2355

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See detailn-InGaAs Schottky Diode with Current Transport along 2DEG Channel
Kordoš, P.; Marso, Michel UL; Fox, A. et al

in Electronics Letters (1992), 28(1992), 1689-1690

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See detailSchottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers,
Kordoš, P.; Marso, Michel UL; Meyer, R. et al

in IEEE Transactions on Electron Devices (1992), 39(1992), 1970-1972

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See detailEnhanced Schottky Barriers on n-In.53Ga.47As Using pInGaAs, GaAs, InP and InGaP Surface layers
Kordoš, P.; Marso, Michel UL; Meyer, R. et al

in Proceedings of the 4th International Conference on InP and Related Compounds, Newport, Rhode Island, USA (1992)

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See detailEnhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers
Kordoš, P.; Marso, Michel UL; Lüth, H.

in Journal of Electrical Engineering = Elektrotechnický Casopis (1992), 44(1992), 367-371

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See detailGaInAs Camel transistors With Current Gain Above 6 at Room Temperature
Marso, Michel UL; Zwinge, G.; Grützmacher, D. et al

in Electronics Letters (1991), 27(1991), 335-337

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See detailBarrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique
Kordoš, P.; Marso, Michel UL; Meyer, R. et al

in Electronics Letters (1991), 27(1991), 1759-1760

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See detailQuasi-Schottky Diodes on (n)In.53Ga.47As With Barrier Heights of 0.6eV
Marso, Michel UL; Kordoš, P.; Meyer, R. et al

in Proceedings of the the MRS Fall Meeting, Symposium E, Boston, MA, USA (1991)

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See detailGaInAs Camel Transistors Grown by MOCVD
Marso, Michel UL; Zwinge, G.; Beneking, H.

in Electronics Letters (1989), 25(1989), 1462-1463

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See detailGaInAs camel diodes grown by MBE
Marso, Michel UL; Chin, A.; Bhattacharya, P. et al

in Proceedings of the 18th European Solid State Device Research Conference (ESSDERC 88), Montpellier, France, 1988, J. de Physique, Colloque C4, suppl. 9 (1988)

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See detailLow-Noise Bulk Unipolar Devices in Si and GaAs
Beneking, H.; Cloos, J.-M.; Fernholz, G. et al

in Proceedings of the 17th European Solid State Devices Research Conference, Bologna, Italy (1987)

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See detailSilicon Bulk Barrier Diodes Fabricated by LPVPE, High Speed Electronics
Beneking, H.; Vescan, L.; Gruhle, A. et al

Book published by Springer (1986)

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