References of "Marso, Michel 50002313"
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See detailCoupling of insect antennae to field-effect transistors for biochemical sensing
Schroth, P.; Schöning, M. J.; Schütz, S. et al

in Electrochimica Acta (1999), 44(1999), 3821-3826

A bioelectronic interface based on the coupling of an intact insect antenna to a field-e effct transistor (FET) has been realised in a whole-beetle BioFET (Biologically sensitive FET) and an isolated ... [more ▼]

A bioelectronic interface based on the coupling of an intact insect antenna to a field-e effct transistor (FET) has been realised in a whole-beetle BioFET (Biologically sensitive FET) and an isolated-antenna BioFET configuration. The intrinsic BioFET characteristics, such as current-voltage curves, transconductance and signal-to-noise ratio clearly depend on the chip layout. Therefore, the experiments were performed with three di erent gate geometries: linear shape (5 um x 100 um), U shape (5 um x 1000 um) and meander shape (10 um x 6000 um). The BioFET allows the determination of the `green-leaf odour' Z-3-hexen-l-ol down to the low ppb concentration range. Thus, the detection of plant damages is possible with this novel kind of biosensor. [less ▲]

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See detailInterference filters from porous silicon with laterally varying wavelength of reflection
Hunkel, D.; Butz, R.; Arens-Fischer, R. et al

in Journal of Luminescence (1999), 80(1999), 133-136

Porous silicon reflection interference filters of Bragg type consists of up to 40 quarter wave layers with alternating high- and low-refraction index. The refraction index depends on the porosity of the ... [more ▼]

Porous silicon reflection interference filters of Bragg type consists of up to 40 quarter wave layers with alternating high- and low-refraction index. The refraction index depends on the porosity of the silicon. The reflection wavelength can vary over a wide range and depends on the thickness and refraction index of the porous layers. A laterally continuously varying wavelength with linear profile of the filter can be achieved by manipulating the porosity and thickness of the silicon in the lateral direction. Our approach is to vary the Fermi level laterally by applying a potential parallel to the surface of the wafer. The slope of the Fermi level is easily controlled by the magnitude of the potential. The lateral current density and thus the porosity and thickness is related to the potential difference between the laterally varying Fermi level and the potential induced by the counter electrode. This relation is the well-known current-voltage characteristic of a Silicon hydrofluoric acid contact. The linearity of the etch profile across the wafer is demonstrated and the properties of preliminary reflection filters are shown. [less ▲]

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See detailAn InAlAs-InGaAs OPFET with Responsivity Above 200 A/W at 1.3 µm Wavelength
Marso, Michel UL; Gersdorf, P.; Fox, A. et al

in IEEE Photonics Technology Letters (1999), 11

The optoelectronic dc and RF behavior of an InAlAs–InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3- um wavelength ... [more ▼]

The optoelectronic dc and RF behavior of an InAlAs–InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3- um wavelength light. The device is backside-illuminated to increase the responsivity. A transistor with 0.3-u m gate length and an active area of 50 x 50 u m2 exhibits a responsivity of 235 A/W, at 11- W incident optical power. The photoconductive response is higher than for an metal–semiconductor–metal photodetector with the same InGaAs absorption layer thickness up to 10 GHz. [less ▲]

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See detailSelectively Grown Vertical Si p-MOS Transistor with Reduced Overlap Capacitances
Klaes, D.; Moers, J.; Tönnesmann, A. et al

in Proceedings of the 28th European Solid State Devices Research Conference, Bordeaux, France (1998)

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See detailOptoelectronic D.C. and R.F. behavior of InP/InGaAs Based HEMTs
Marso, Michel UL; Horstmann, M.; Hardtdegen, H. et al

in Solid-State Electronics (1998), 42(1998), 197-200

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See detailSelectively Grown Vertical Si MOS Transistor with Reduced Overlap Capacitances
Klaes, D.; Moers, J.; Tönnesmann, A. et al

in Thin Solid Films (1998), 336(1998), 306-308

Vertical p-MOS transistors with channel length of 130 nm have been fabricated using selective epitaxial growth (SEG) to define the channel region. The vertical layout offers the advantages of achieving ... [more ▼]

Vertical p-MOS transistors with channel length of 130 nm have been fabricated using selective epitaxial growth (SEG) to define the channel region. The vertical layout offers the advantages of achieving short channel lengths and high integration densities while still using optical lithography to define lateral dimensions. Compared to other vertical concepts, this layout has reduced gate to source/drain overlap capacitances which is necessary for high speed applications. The use of SEG instead of blanket epitaxy avoids the deterioration of the Si/SiO2 interface due to reactive ion etching (RIE) and reduces punch-through due to facet growth. First non-optimized p-channel MOSFETs with a 12-nm gate oxide show a transconductance of 90 mS/mm. The cut-off frequencies of this device turned out to be f T = 2.3 GHz and f max = 1.1 GHz. [less ▲]

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See detailMicrowave Properties of the MSM Photodetectors with 2-DEG
Tomáška, M.; Marso, Michel UL; Fox, A. et al

in Proc. 2nd International Conference on Advanced Semiconductor Devices and Microsystems (1998)

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See detailConduction in nonstoichiometric molecular-beam epitaxial GaAs grown above the critical thickness
Kordoš, P.; Marso, Michel UL; Luysberg, M.

in Applied Physics Letters (1998), 72

Different conduction behavior is observed in nonstoichiometric ~NS! molecular-beam epitaxial GaAs grown at 200 °C below and above the critical thickness. In the low-field Ohmic region only the ... [more ▼]

Different conduction behavior is observed in nonstoichiometric ~NS! molecular-beam epitaxial GaAs grown at 200 °C below and above the critical thickness. In the low-field Ohmic region only the monocrystalline part of the layer contributes to the room-temperature resistivity, but at higher temperatures the resistivity scales with the total layer thickness. In NS GaAs grown above the critical thickness, a superlinear J –V^n (n=2 – 3) dependence is found at intermediate fields. The prebreakdown voltage is proportional to the total thickness. This indicates that different defects control the electrical properties of the polycrystalline and monocrystalline parts of the NS GaAs. These results can be useful in the design of NS GaAs based devices, which operate at higher temperature and/or higher electric fields. [less ▲]

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See detailInvestigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses
Marso, Michel UL; Gersdorf, P.; Fox, A. et al

in Proceedings of the 6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) (1998)

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See detailPIN-PJBT Integration: A New GaAs Based Optoelectronic Receiver,
Dillmann, F.; Marso, Michel UL; Hardtdegen, H. et al

in Proceedings of the 28th European Solid State Devices Research Conference, Bordeaux, France, (1998)

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See detail550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs
Kordoš, P.; Förster, A.; Marso, Michel UL et al

in Electronics Letters (1998), 34(1998), 119-120

The authors demonstrate that a 550GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6ps rise and fall times, respectively. The bandwidth ... [more ▼]

The authors demonstrate that a 550GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6ps rise and fall times, respectively. The bandwidth is in agreement with a value calculated using a carrier lifetime of 0.2ps, measured by femtosecond time-resolved reflectivity, and a capacitance of 0.014fF/um2, determined from microwave measurements. The device bandwidth is RC limited. [less ▲]

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See detailOptoelectronic DC and RF behaviour of InAlAs/InGaAs based HEMTs at 1.3µm wavelength
Marso, Michel UL; Fox, A.; Förster, A. et al

in Proc. 3rd Asia-Pacific Conference on Communications, Sydney, Australia (1997)

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See detailColor-Sensistive Si-Photodiode Using Porous Silicon Interference Filters
Krüger, M.; Berger, M. G.; Marso, Michel UL et al

in Japanese Journal of Applied Physics (1997), 36(1997), 24-26

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See detailDemonstration of Nitrogen Carrier Gas in MOVPE For InP/InGaAs-Based High Frequency and Optoelectronic Integrated Devices
Hardtdegen, H.; Marso, Michel UL; Horstmann, M. et al

in Proceedings of the 9th International Conference on InP and Related Materials, Hyannis, Massachusetts, USA (1997)

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See detailElectrical Behaviour of the InP/InGaAs Based MSM-2DEG Diode
Marso, Michel UL; Horstmann, M.; Hardtdegen, H. et al

in Solid-State Electronics (1997), 41(1997), 25-31

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See detailHigh Bandwidth InP/InGaAs Based MSM-2DEG Diodes For Optoelectronic Application,
Marso, Michel UL; Horstmann, M.; Schimpf, K. et al

in Proceedings of the 9th International Conference on InP and Related Materials (1997)

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See detailColor-Sensitive Photodetector Based on Porous Silicon Superlattices
Krüger, M.; Marso, Michel UL; Berger, M. G. et al

in Thin Solid Films (1997), 297(1997), 241-244

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See detailSpace-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs,
Kordoš, P.; Marso, Michel UL; Förster, A. et al

in Applied Physics Letters (1997), 71

Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of ... [more ▼]

Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of LT GaAs at low electric fields is rho>108 Ohm cm, much higher than resulting from van der Pauw measurements. It is found that the measured resistivity decreases with increasing the LT GaAs thickness. This is explained by space-charge effect in the vicinity of n+/LT GaAs junction and subsequent suppression of hopping conduction in the high-field junction region. [less ▲]

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See detail0.1 µm T-gate Al-free InP/InGaAs/InP pHEMTs for W-Band Applications Using a Nitrogen Carrier for LP-MOCVD Growth
Schimpf, K.; Sommer, M.; Horstmann, M. et al

in IEEE Electron Device Letters (1997), 18

We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and ... [more ▼]

We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and channel composition on the performance of these devices is investigated.We demonstrate that optimum dc and RF performance using highly strained channels can be obtained only if additional composite channels are grown. The cutoff frequencies fT =160 GHz and fmax=260 GHz for a 0.1- um T-gate device indicate the suitability of our devices for W-Band applications. [less ▲]

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See detailMSM Photodetectors Based on InP/InGaAs 2DEG Structures, in Optoelectronic Properties of Semiconductors and Superlattices
Horstmann, M.; Marso, Michel UL; Kordoš, P.

Book published by Gordon and Brerach Science Publishers (1997)

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