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Showing results 101 to 120 of 125
 Simple Realization of a Monolithic Integrated Photoreceiver for 10GBit/s Using an InP/InGaAs Heterostructure; ; et al in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996) Detailed reference viewed: 83 (2 UL)InP-Based Monolithically Integrated Photoreceiver for 4-10Gbit/s Optoelectronic Systems; ; et al in Proceedings of the Gallium Arsenide Application Symposium GAAS 96, Paris, France (1996) Detailed reference viewed: 39 (0 UL)Frequency Response of InP/InGaAs MSM Photodetector with Current Transport Along 2DEG; ; et al in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996) Detailed reference viewed: 87 (0 UL)Monolithic Integrated Photoreceiver for 10GBit/s Systems Prepared on InGaAs/InP 2DEG Structure,; ; Marso, Michel  et alin Proceedings of the International Conference on Telecommunications Istanbul, Turkye (1996) Detailed reference viewed: 27 (0 UL)0.2µm T-gate InP/InGaAs/InP pHEMT with InGaP Diffusion Barrier Layer Grown by LP-MOCVD using an N2-Carrier; ; et al in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996) Detailed reference viewed: 1126 (7 UL)Novel MSM-2DEG PD/HEMT Photoreceiver for 10 Gbit/s Operation; ; et al in Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy (1996) Detailed reference viewed: 34 (0 UL)  Responsivity Enhancement of InGaAs Based MSM Photodetectors Using 2DEG Layer Sequence and Semitransparent Electrodes; Marso, Michel ; et alin Electronics Letters (1996), 32 The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with ... [more ▼] The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with 2um finger-spacing and finger-width exhibit a dark current density less than 10pA/um2, a breakdown voltage of 45V and a saturation capacitance of 30fF. A DC responsivity of 0.61A/W and a –3dB bandwidth of 8.5GHz were achieved. The electric potential distribution is modified by a 2DEG inserted in the layer structure leading, to improved bandwidth. [less ▲] Detailed reference viewed: 90 (0 UL)InP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits; Marso, Michel ; et alBook published by Kluver Academic Publishers (1996) Detailed reference viewed: 40 (0 UL)0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-MOCVD Using an N2-carrier; ; et al in Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy, 1996 (1996) Detailed reference viewed: 1154 (1 UL)Thermionic Field Emission in p-Barrier enhanced InP/InGaAs/InP HEMTs; ; et al in Electronics Letters (1996), 32(1996), 2132-2133 A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness ... [more ▼] A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained. [less ▲] Detailed reference viewed: 110 (0 UL)Novel HEMT layout: The RoundHEMTMarso, Michel ; ; et alin Electronics Letters (1995), 31(1995), 589-591 Detailed reference viewed: 108 (0 UL)Ion Sensitive Field Effect Transistors with Ultrathin Langmuir-Blodgett Membranes; ; et al in Sensors and actuators. B, Chemical (1995), 26-27(1995), 325-328 Detailed reference viewed: 80 (0 UL)Novel InP/GaInAs Photodetector for Integration in HEMT Circuits; Marso, Michel ; et alin Proceedings of the 25th European Solid State Devices Research Conference, Den Haag, The Netherlands (1995) Detailed reference viewed: 35 (0 UL)InP/InGaAs Photodetector Based on a High Electron Mobility Transistor Layer Structure: Its Response at 1.3 µm wavelength; Marso, Michel ; et alin Applied Physics Letters (1995), 67(1995), 106-108 We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high ... [more ▼] We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high electron mobility transistor structure. The photodetector is fabricated in the InP/InGaAs material system, without use of Al-containing layers. Optoelectronic measurements on a device with a finger spacing of 3 mm show a full width at half-maximum (FWHM) of the pulse response of <60 ps, which is the resolution limit of our measurement equipment. Low-temperature measurements at 40 K with electro-optical sampling at a wavelength of 890 nm show a FWHM of 1 ps. [less ▲] Detailed reference viewed: 56 (0 UL)A Novel InP/InGaAs Photodetector Based on a 2DEG layer structureMarso, Michel ; ; et alin Proceedings of the 6th International Conference on InP and Related Compounds, Santa Barbara, California USA (1994) Detailed reference viewed: 81 (0 UL)Schottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and strained InGaAs; Marso, Michel in EMS Datareviews (1993), (INSPEC IEE London), 131-155 Detailed reference viewed: 45 (0 UL)A Novel InGaAs Schottky-2DEG DiodeMarso, Michel ; ; et alin Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993) Detailed reference viewed: 132 (0 UL)Optimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conductivity for HEMT Application; ; et al in Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993) Detailed reference viewed: 38 (0 UL)n-InGaAs Schottky Diode with Current Transport along 2DEG Channel; Marso, Michel ; et alin Electronics Letters (1992), 28(1992), 1689-1690 Detailed reference viewed: 106 (0 UL)Schottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers,; Marso, Michel ; et alin IEEE Transactions on Electron Devices (1992), 39(1992), 1970-1972 Detailed reference viewed: 32 (0 UL) |
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