Coupling of insect antennae to field-effect transistors for biochemical sensing

in Electrochimica Acta (1999), 44(1999), 3821-3826

A bioelectronic interface based on the coupling of an intact insect antenna to a field-e effct transistor (FET) has been realised in a whole-beetle BioFET (Biologically sensitive FET) and an isolated ... [more ▼]

A bioelectronic interface based on the coupling of an intact insect antenna to a field-e effct transistor (FET) has been realised in a whole-beetle BioFET (Biologically sensitive FET) and an isolated-antenna BioFET configuration. The intrinsic BioFET characteristics, such as current-voltage curves, transconductance and signal-to-noise ratio clearly depend on the chip layout. Therefore, the experiments were performed with three di erent gate geometries: linear shape (5 um x 100 um), U shape (5 um x 1000 um) and meander shape (10 um x 6000 um). The BioFET allows the determination of the `green-leaf odour' Z-3-hexen-l-ol down to the low ppb concentration range. Thus, the detection of plant damages is possible with this novel kind of biosensor. [less ▲]

19 GHz vertical Si p-channel MOSFET

in Electronics Letters (1999), 35(1999), 239-240

Vertical Si p-MOSFETs with channel lengths of 100nm were fabricated using selective low pressure chemical vapour deposition (LPCVD) epitaxial growth and conventional i-line lithography. The layout, called ... [more ▼]

Vertical Si p-MOSFETs with channel lengths of 100nm were fabricated using selective low pressure chemical vapour deposition (LPCVD) epitaxial growth and conventional i-line lithography. The layout, called VOXFET, reduces gate to source/drain overlap capacitances, thus improving high speed applications. Transistors with a gate width of 12 um and gate oxide thickness of 10nm show transconductances gM of 200mS/mm and measured cutoff frequencies of fT = 8.7GHz and fMAX = 19.2 GHz. [less ▲]

Selectively Grown Vertical Si p-MOS Transistor with Reduced Overlap Capacitances

in Proceedings of the 28th European Solid State Devices Research Conference, Bordeaux, France (1998)

Microwave Properties of the MSM Photodetectors with 2-DEG

in Proc. 2nd International Conference on Advanced Semiconductor Devices and Microsystems (1998)

Investigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses

in Proceedings of the 6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) (1998)

The electrical behaviour of GaAs MESFETs formed on high and low temperature GaAs buffer layers

in High Performance Electron Devices for Microwave and Optoelectronic Applications (1997, November 24)

Comparisons have been made between the channel currents in GaAs hESFETs prepared on GaAs buffer layers prepared at normal and low temperatures. All devices made on LT buffer layers had saturated channel ... [more ▼]

Comparisons have been made between the channel currents in GaAs hESFETs prepared on GaAs buffer layers prepared at normal and low temperatures. All devices made on LT buffer layers had saturated channel currents which were about 20% of similar devices on a normal buffer. An attempt was made to remove Ga vacanciies from the LT buffer by a high temperature anneal step before the epitaxial layer was prepared. This had no effect in increasing the channel current. In all cases the pinchoiy voltage was unchanged indicating constancy of the channel thickness and donor concentration. It is concluded that the loss of current is due to a loss of mobile charge through trapping. [less ▲]

0.1 µm T-gate Al-free InP/InGaAs/InP pHEMTs for W-Band Applications Using a Nitrogen Carrier for LP-MOCVD Growth

in IEEE Electron Device Letters (1997), 18

We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and ... [more ▼]

We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and channel composition on the performance of these devices is investigated.We demonstrate that optimum dc and RF performance using highly strained channels can be obtained only if additional composite channels are grown. The cutoff frequencies fT =160 GHz and fmax=260 GHz for a 0.1- um T-gate device indicate the suitability of our devices for W-Band applications. [less ▲]

MSM Photodetectors Based on InP/InGaAs 2DEG Structures, in Optoelectronic Properties of Semiconductors and Superlattices

Book published by Gordon and Brerach Science Publishers (1997)

Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs,

in Applied Physics Letters (1997), 71

Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of ... [more ▼]

Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of LT GaAs at low electric fields is rho>108 Ohm cm, much higher than resulting from van der Pauw measurements. It is found that the measured resistivity decreases with increasing the LT GaAs thickness. This is explained by space-charge effect in the vicinity of n+/LT GaAs junction and subsequent suppression of hopping conduction in the high-field junction region. [less ▲]

16 GHz Bandwidth MSM Photodetector and 45/85 GHz fT/fmax HEMT Prepared on an Identical InGaAs/InP Layer Structure

in Electronics Letters (1996), 32