References of "Kordoš, P"
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See detailFrequency Response of InP/InGaAs MSM Photodetector with Current Transport Along 2DEG
Horstmann, M.; Hollfelder, M.; Muttersbach, J. et al

in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996)

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See detailMonolithic Integrated Photoreceiver for 10GBit/s Systems Prepared on InGaAs/InP 2DEG Structure,
Horstmann, M.; Schimpf, K.; Marso, Michel UL et al

in Proceedings of the International Conference on Telecommunications Istanbul, Turkye (1996)

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See detail0.2µm T-gate InP/InGaAs/InP pHEMT with InGaP Diffusion Barrier Layer Grown by LP-MOCVD using an N2-Carrier
Schimpf, K.; Hollfelder, M.; Horstmann, M. et al

in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996)

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See detailNovel MSM-2DEG PD/HEMT Photoreceiver for 10 Gbit/s Operation
Horstmann, M.; Muttersbach, J.; v.d.Hart, A. et al

in Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy (1996)

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See detailResponsivity Enhancement of InGaAs Based MSM Photodetectors Using 2DEG Layer Sequence and Semitransparent Electrodes
Horstmann, M.; Marso, Michel UL; Muttersbach, J. et al

in Electronics Letters (1996), 32

The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with ... [more ▼]

The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with 2um finger-spacing and finger-width exhibit a dark current density less than 10pA/um2, a breakdown voltage of 45V and a saturation capacitance of 30fF. A DC responsivity of 0.61A/W and a –3dB bandwidth of 8.5GHz were achieved. The electric potential distribution is modified by a 2DEG inserted in the layer structure leading, to improved bandwidth. [less ▲]

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See detailInP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits
Horstmann, M.; Marso, Michel UL; Schimpf, K. et al

Book published by Kluver Academic Publishers (1996)

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See detail0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-MOCVD Using an N2-carrier
Schimpf, K.; Hollfelder, M.; Horstmann, M. et al

in Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy, 1996 (1996)

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See detailThermionic Field Emission in p-Barrier enhanced InP/InGaAs/InP HEMTs
Schimpf, K.; Horstmann, M.; Hardtdegen, H. et al

in Electronics Letters (1996), 32(1996), 2132-2133

A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness ... [more ▼]

A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained. [less ▲]

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See detail16 GHz Bandwidth MSM Photodetector and 45/85 GHz fT/fmax HEMT Prepared on an Identical InGaAs/InP Layer Structure
Horstmann, M.; Schimpf, K.; Marso, Michel UL et al

in Electronics Letters (1996), 32

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See detailSimple Realization of a Monolithic Integrated Photoreceiver for 10GBit/s Using an InP/InGaAs Heterostructure
Horstmann, M.; Hollfelder, M.; Schimpf, K. et al

in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996)

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See detailIon Sensitive Field Effect Transistors with Ultrathin Langmuir-Blodgett Membranes
Schöning, M. J.; Sauke, M.; Steffen, A. et al

in Sensors and actuators. B, Chemical (1995), 26-27(1995), 325-328

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See detailNovel InP/GaInAs Photodetector for Integration in HEMT Circuits
Horstmann, M.; Marso, Michel UL; Schimpf, K. et al

in Proceedings of the 25th European Solid State Devices Research Conference, Den Haag, The Netherlands (1995)

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See detailInP/InGaAs Photodetector Based on a High Electron Mobility Transistor Layer Structure: Its Response at 1.3 µm wavelength
Horstmann, M.; Marso, Michel UL; Fox, A. et al

in Applied Physics Letters (1995), 67(1995), 106-108

We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high ... [more ▼]

We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high electron mobility transistor structure. The photodetector is fabricated in the InP/InGaAs material system, without use of Al-containing layers. Optoelectronic measurements on a device with a finger spacing of 3 mm show a full width at half-maximum (FWHM) of the pulse response of <60 ps, which is the resolution limit of our measurement equipment. Low-temperature measurements at 40 K with electro-optical sampling at a wavelength of 890 nm show a FWHM of 1 ps. [less ▲]

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See detailNovel HEMT layout: The RoundHEMT
Marso, Michel UL; Schimpf, K.; Fox, A. et al

in Electronics Letters (1995), 31(1995), 589-591

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See detailA Novel InP/InGaAs Photodetector Based on a 2DEG layer structure
Marso, Michel UL; Horstmann, M.; Rüders, F. et al

in Proceedings of the 6th International Conference on InP and Related Compounds, Santa Barbara, California USA (1994)

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See detailOptimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conductivity for HEMT Application
Meyer, R.; Hardtdegen, H.; Leuther, A. et al

in Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993)

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See detailA Novel InGaAs Schottky-2DEG Diode
Marso, Michel UL; Kordoš, P.; Fox, A. et al

in Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993)

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See detailSchottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and strained InGaAs
Kordoš, P.; Marso, Michel UL

in EMS Datareviews (1993), (INSPEC IEE London), 131-155

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See detailn-InGaAs Schottky Diode with Current Transport along 2DEG Channel
Kordoš, P.; Marso, Michel UL; Fox, A. et al

in Electronics Letters (1992), 28(1992), 1689-1690

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See detailSchottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers,
Kordoš, P.; Marso, Michel UL; Meyer, R. et al

in IEEE Transactions on Electron Devices (1992), 39(1992), 1970-1972

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