References of "Fox, A"
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See detailVertical Silicon MOSFETs based on Selective Epitaxial Growth
Moers, J.; Tönnesmann, A.; Klaes, D. et al

in Proc. 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (2000)

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See detailA Novel InAlAs/InGaAs Layer Structure for Monolithically Integrated Photoreceiver,
Hodel, U.; Orzati, A.; Marso, Michel UL et al

in Proc. 2000 Int. Conf. Indium Phosphide and Related Materials (2000)

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See detailAn InAlAs-InGaAs OPFET with Responsivity Above 200 A/W at 1.3 µm Wavelength
Marso, Michel UL; Gersdorf, P.; Fox, A. et al

in IEEE Photonics Technology Letters (1999), 11

The optoelectronic dc and RF behavior of an InAlAs–InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3- um wavelength ... [more ▼]

The optoelectronic dc and RF behavior of an InAlAs–InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3- um wavelength light. The device is backside-illuminated to increase the responsivity. A transistor with 0.3-u m gate length and an active area of 50 x 50 u m2 exhibits a responsivity of 235 A/W, at 11- W incident optical power. The photoconductive response is higher than for an metal–semiconductor–metal photodetector with the same InGaAs absorption layer thickness up to 10 GHz. [less ▲]

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See detailInvestigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses
Marso, Michel UL; Gersdorf, P.; Fox, A. et al

in Proceedings of the 6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) (1998)

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See detailMicrowave Properties of the MSM Photodetectors with 2-DEG
Tomáška, M.; Marso, Michel UL; Fox, A. et al

in Proc. 2nd International Conference on Advanced Semiconductor Devices and Microsystems (1998)

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See detailOptoelectronic DC and RF behaviour of InAlAs/InGaAs based HEMTs at 1.3µm wavelength
Marso, Michel UL; Fox, A.; Förster, A. et al

in Proc. 3rd Asia-Pacific Conference on Communications, Sydney, Australia (1997)

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See detail16 GHz Bandwidth MSM Photodetector and 45/85 GHz fT/fmax HEMT Prepared on an Identical InGaAs/InP Layer Structure
Horstmann, M.; Schimpf, K.; Marso, Michel UL et al

in Electronics Letters (1996), 32

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See detailInP/InGaAs Photodetector Based on a High Electron Mobility Transistor Layer Structure: Its Response at 1.3 µm wavelength
Horstmann, M.; Marso, Michel UL; Fox, A. et al

in Applied Physics Letters (1995), 67(1995), 106-108

We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high ... [more ▼]

We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high electron mobility transistor structure. The photodetector is fabricated in the InP/InGaAs material system, without use of Al-containing layers. Optoelectronic measurements on a device with a finger spacing of 3 mm show a full width at half-maximum (FWHM) of the pulse response of <60 ps, which is the resolution limit of our measurement equipment. Low-temperature measurements at 40 K with electro-optical sampling at a wavelength of 890 nm show a FWHM of 1 ps. [less ▲]

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See detailNovel HEMT layout: The RoundHEMT
Marso, Michel UL; Schimpf, K.; Fox, A. et al

in Electronics Letters (1995), 31(1995), 589-591

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See detailA Novel InGaAs Schottky-2DEG Diode
Marso, Michel UL; Kordoš, P.; Fox, A. et al

in Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993)

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See detailn-InGaAs Schottky Diode with Current Transport along 2DEG Channel
Kordoš, P.; Marso, Michel UL; Fox, A. et al

in Electronics Letters (1992), 28(1992), 1689-1690

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