References of "Bernát, J."
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See detailMSM Diodes Based on an AlGaN/GaN HEMT Layer Structure for Varactor and Photodiode Application
Marso, Michel UL; Bernát, J.; Wolter, M. et al

in , Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (2002)

Detailed reference viewed: 87 (0 UL)
See detailVaractor Diodes based on an AlGaN/GaN HEMT layer structure
Marso, Michel UL; Wolter, M.; Bernát, J. et al

in EProc. EDMO (2001)

Detailed reference viewed: 113 (0 UL)