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See detailOvergrowth of wrinkled InGaAs membranes using molecular beam epitaxy
da Silva, S. Filipe Covre; Martin Lanzoni, Evandro UL; Malachias, A. et al

in Journal of Crystal Growth (2015), 425

Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the ... [more ▼]

Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The material migration during growth is evaluated by distinct microscopy techniques. We find a systematic accumulation of the deposited material on the released, wrinkled areas of the sample, whereas no material accumulation or formation of three-dimensional nanostructures is observed on the unreleased areas of the sample. [less ▲]

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